MT130CB16T2 [YANGJIE]

Thyristor/Diode Modules;
MT130CB16T2
型号: MT130CB16T2
厂家: YANGZHOU YANGJIE ELECTRONIC CO., LTD    YANGZHOU YANGJIE ELECTRONIC CO., LTD
描述:

Thyristor/Diode Modules

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中文:  中文翻译
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RoHS  
MT130CB-T2  
COMPLIANT  
Thyristor/Diode Modules  
VRRM / VDRM  
IFAV / ITAV  
800 to 1800V  
130A  
Applications  
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
International standard package  
High Surge Capability  
Glass passivated chip  
Simple Mounting  
Heat transfer through aluminum oxide DBC  
ceramic isolated metal baseplate  
1
2
3
5
4
UL recognized applied for file no. E360040  
Module Type  
TYPE  
VRRM/VDRM  
800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MT130CB08T2  
MT130CB12T2  
MT130CB16T2  
MT130CB18T2  
1200V  
1600V  
1800V  
Diode  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
A
ID  
IFSM  
i2t  
Output Current(D.C.)  
Tc=85  
130  
Surge forward current  
t=10mS Tvj =45℃  
4700  
A
A2s  
Circuit Fusing Consideration  
110000  
3000  
Visol  
Tvj  
Isolation Breakdown Voltage(R.M.S)  
Operating Junction Temperature  
Storage Temperature  
a.c.50HZ;r.m.s.;1min  
V
-40 to +125  
-40 to +125  
3±15%  
5±15%  
165  
Tstg  
Mt  
Mounting Torque  
To terminals(M6)  
To heatsink(M6)  
Nm  
Nm  
g
Ms  
Weight  
ModuleApproximately  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.09  
Units  
/W  
Thermal Impedance, max.  
Rth(c-s) Thermal Impedance, max.  
Case to Heatsink  
0.05  
/W  
Electrical Characteristics  
Values  
Min. Typ.  
Symbol  
VFM  
Item  
Conditions  
Units  
Max.  
1.80  
Forward Voltage Drop, max.  
V
T=25IF =500A  
Tvj =25VRD=VRRM  
Tvj =125VRD=VRRM  
Repetitive Peak Reverse Current,  
max.  
≤0.5  
9  
mA  
mA  
IRRM  
S-M050  
www.21yangjie.com  
Rev.2.0, 27-May-17  
1
RoHS  
MT130CB-T2  
COMPLIANT  
Thyristor  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
ITAV  
Average On-State Current  
Sine 180o;Tc=85℃  
130  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
4700  
4000  
ITSM  
Surge On-State Current  
A
TVJ =45t=10ms, sine  
TVJ =125t=10ms, sine  
110000  
80000  
i2t  
Circuit Fusing Consideration  
A2s  
Visol  
Tvj  
Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min  
Operating Junction Temperature  
3000  
V
-40 to +130  
-40 to +125  
3±15%  
Tstg  
Mt  
Storage Temperature  
Mounting Torque  
To terminals(M6)  
To heatsink(M6)  
Nm  
Nm  
Ms  
5±15%  
Critical Rate of Rise of On-State  
Current  
TVJ= TVJM , 2/3VDRM ,IG =500mA  
Tr<0.5us,tp>6us  
di/dt  
200  
A/us  
Critical Rate of Rise of Off-State  
Voltage, min.  
dv/dt  
a
TJ=TVJM ,2/3VDRM linear voltage rise  
1000  
50  
V/us  
m/s2  
Maximum allowable acceleration  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.18  
Units  
/W  
Thermal Impedance, max.  
Rth(c-s)  
Thermal Impedance, max.  
Case to Heatsink  
0.10  
/W  
Electrical Characteristics  
Values  
Min. Typ. Max.  
Symbol  
Item  
Conditions  
Units  
VTM  
Peak On-State Voltage, max.  
T=25IT =500A  
1.8  
V
Repetitive Peak Reverse Current,  
max. / Repetitive Peak Off-State  
Current, max.  
TVJ=TVJM ,VR=VRRM ,VD=  
VDRM  
IRRM/IDRM  
40  
mA  
For power-loss  
calculations only  
(TVJ =125)  
VTO  
On state threshold voltage  
1
V
Value of on-state  
slope resistance. max  
rT  
TVJ =TVJM  
1.6  
mΩ  
VGT  
IGT  
VGD  
IGD  
IL  
Gate Trigger Voltage, max.  
Gate Trigger Current, max.  
Non-triggering gate voltage, max.  
Non-triggering gate current, max.  
Latching current, max.  
TVJ =25, VD =6V  
3
V
TVJ =25, VD =6V  
150  
0.25  
10  
mA  
V
TVJ=125,VD =2/3VDRM  
TVJ =125, VD =2/3VDRM  
TVJ =25, RG = 33 Ω  
TVJ =25, VD =6V  
mA  
mA  
mA  
300  
150  
1000  
400  
IH  
Holding current, max.  
TVJ=25,  
IG=1A, diG/dt=1A/us  
tgd  
tq  
Gate controlled delay time  
1
us  
us  
Circuit commutated turn-off time  
TVJ =TVJM  
100  
S-M050  
www.21yangjie.com  
Rev.2.0, 27-May-17  
2
RoHS  
MT130CB-T2  
COMPLIANT  
Performance Curves  
250  
W
250  
sin.180  
A
rec.120  
DC  
DC  
200  
200  
rec.60  
150  
100  
50  
150  
rec.30  
sin.180  
rec.120  
100  
50  
rec.60  
rec.30  
PTAV  
0
ITAVM  
0
0
ITAV  
50  
100  
150  
A 200  
0
Tc  
50  
100  
130  
Fig1. Power dissipation  
Fig2.Forward Current Derating Curve  
6000  
A
0.30  
50HZ  
Zth(j-S)  
Zth(j-C)  
/ W  
0.15  
3000  
0
0
0.001  
t
0.01  
0.1  
1
10  
S
100  
10  
100  
ms 1000  
Fig3. Transient thermal impedance  
Fig4. Max Non-Repetitive Forward Surge  
Current  
600  
A
Typ.  
400  
max.  
200  
25℃  
IT  
0
- - -125℃  
0
VTM  
0.5  
1.0  
1.5 2.0  
V
Fig5. Forward Characteristics  
S-M050  
Rev.2.0, 27-May-17  
www.21yangjie.com  
3
RoHS  
MT130CB-T2  
COMPLIANT  
100  
V
1/2·MT130CB18T2  
20V;20Ω  
100  
10  
W
(
50  
W
0
.
5
ms  
(
8
)
ms  
)
VGT  
PG(tp)  
1
-40  
25℃  
Tvj  
125℃  
VGD125  
IGT  
VG  
IGD125  
0.1  
0.001 IG  
0.01  
0.1  
1
10  
A 100  
Fig6. Gate trigger Characteristics  
Package Outline Information  
CASE: T2  
YJ  
Dimensions in mm  
S-M050  
www.21yangjie.com  
Rev.2.0, 27-May-17  
4

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