YJ4N80CM [YANGJIE]

N-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	YJ4N80CM
厂家：	YANGZHOU YANGJIE ELECTRONIC CO., LTD
描述：	N-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总10页 (文件大小：1179K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

YJ4N80

Feature:



Low Crss

Low Gate Charge

Fast Switching

Improved ESD Capability

Improved dv/dt Capability

100% Avalanche Energy Test

Mechanical Data:



Package： MOS

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant



Terminal：Tin plated leads，

Solderable per J-STD-002 and JESD22-B102

Polarity： As marked on body

Ordering Information

■

PACKING

CODE

MINIIMUM

INNER BOX OUTER CARTON DELIVERY

P/N

PACKAGE

UNIT WEIGHT(g)

PACKAGE(pcs)QUANTITY(pcs) QUANTITY(pcs)

MODE

ITO-220AB

TO-220AB

TO-263

Approximate 1.7

Approximate 2.0

Approximate 1.4

Approximate 0.4

1000

4500

5000

TUBE

YJ4N80CI

YJ4N80CZ

YJ4N80CM

YJ4N80CH

YJ4N80CP

TUBE

5000

TO-251

22500

25000

TO-252

2500

(T =25℃ Unless otherwise specified

■

Maximum Ratings

)

Parameter

Symbol

Value

Unit

V_DSS

800

3.7*

2.2*

Drain-Source Voltage

Tc=25℃

I_D

Continues Drain Current

Tc=100℃

I_DM

V_GS

E_AS

Plused Drain Current (note 1)

Gate-to-Source Voltage

±30

218

Single Pulsed Avalanche Energy (note 2)

1 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

I_AR

3.0

Avalanche Current (note 1)

Repetitive Avalanche Energy (note 1)

Peak Diode Recovery (note 3)

E_AR

dv/dt

V/ns

4.5

TO-220AB

ITO-220AB

P_D

Tc=25℃

Power Dissipation

TO-251/TO-252

TO-220AB

0.55

P_D(DF)

Above 25℃

ITO-220AB

0.21

W/℃

Power Dissipation Derating Factor

TO-251/TO-252

0.39

T_J，T_STG

150，-55～+150

300

℃

Operating and Storage Temperature Range

Maximum Temperature for Soldering

T_L

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

Off-Characteristics

Parameter

Symbol

TestsConditions

I_D=250μA, V_GS=0V

Min

800

Type

Max

Unit

BV_DSS

Drain-SourceBreakdownVoltage

BreakdownVoltageTemperatureCoefficient

△BV_DSS

△T_J

V/℃

I_D=250μA, referenced to 25℃

0.7

V_DS=800V,V_GS=0V,T_C=25℃

V_DS=640V,T_C=125℃

V_DS=0V,V_GS=30V

ZeroGateVoltageDrainCurrent

I_DSS

μA

Gate-bodyleakagecurrent,forward

Gate-bodyleakagecurrent,reverse

I_GSSF

100

I_GSSR

V_DS=0V,V_GS=-30V

-100

On-Characteristics

Parameter

Symbol

TestsConditions

Min

Type

Max

Unit

GateThresholdVoltage

V_GS(th)

V_DS=V_GS, I_D=250μA

2.0

4.0

2 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

StaticDrain-SourceOn-Resistance

ForwardTransconductance

R_DS(ON)

V_GS=10V, I_D=2.0A

3.8

V_DS=40V,I_D=2.0A（note4）

4.0

Dynamic Characteristics

Parameter

Symbol

TestsConditions

Min

Type

Max

Unit

Inputcapacitance

Outputcapacitance

517

637

iss

C_oss

V_DS=25V,V_GS=0V,f=1.0MHZ

Reversetransfercapacitance

rss

Switching Characteristics

Parameter

Symbol

TestsConditions

Min

Type

Max

Unit

Turn-Ondelaytime

Turn-Onrisetime

Turn-Offdelaytime

t_d(on)

43.5

22.5

V_DD=400V,I_D=3.7A,R_G=25Ω

（note4，5）

t_d(off)

Turn-OffFalltime

TotalGateCharge

Gate-Sourcecharge

Gate-Draincharge

3.4

Qgs

Qgd

V_DS=640V, I_D=3.7A,V_GS=10V

（note4，5）

Drain-Source Diode Characteristics and Maximum Ratings

Parameter

Symbol

TestsConditions

Min

Type

Max

Unit

MaximumContinuousDrain-SourceDiode

ForwardCurrent

I_S

3.7

MaximumPulsedDrain-SourceDiode

ForwardCurrent

I_SM

3 / 10

Yangzhou Yangjie Electronic Technology Co., Ltd.

(编号 Arail 10.5)

(版本号，日期)

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Drain-SourceDiodeForwardVoltage

V_SD

V_GS=0V,I_S=3.7A

1.4

Reverserecoverytime

642

4.0

V_GS=0V,I_S=3.7A

dI_F/dt=100A/μs(note4)

Reverserecoverycharge

μC

Thermal Characteristics （T =25℃ Unless otherwise specified）

■

Parameter

Symbol

Max

Unit

TO-220AB

1.81

4.75

2.5

Rth(j-c)

Rth(j-A)

℃/W

ITO-220AB

TO-251/TO-252

TO-220AB

ThermalResistance，JunctiontoCase

62.5

ITO-220AB

ThermalResistance，JunctiontoAmbient

TO-251/TO-252

*Draincurrentlimitedbymaximumjunctiontemperature

Notes:

1：Pulse width limited by maximum junction temperature

2：L=25mH, I_AS=4A, V_DD=50V, R_G=25Ω, Starting T_J=25℃

3：I_SD≤4A, di/dt ≤300A/μs, V_DD≤BV_DSS, Starting T_J=25℃

4：Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2％

5：Essentially independent of operating temperature

Characteristics (Typical)

■

4 / 10

Yangzhou Yangjie Electronic Technology Co., Ltd.

(编号 Arail 10.5)

(版本号，日期)

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Fig. 1 On-State Characteristics

Fig. 2 Transfer Characteristics

Fig. 3 Breakdown Voltage Variation vs Temperature

Fig. 4 On-Resistance Variation vs Temperature

Fig. 5 Capacitance Characteristics

Fig. 6 Gate Charge Characteristics

5 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Fig. 7 Maximum Safe Operating Area

Fig. 8 Maximum Drain Current vs Case Temperature

Fig. 9 Transient Thermal Response Curve(TO-251/TO-252)

Fig. 10 Transient Thermal Response Curve(ITO-220)

6 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Fig. 11 Transient Thermal Response Curve(TO-220AB)

■ Outline Dimensions

Symbol

Min

Max

Symbol

Min

Max

9.96

10.36

2.54

7.00

1.15

0.70

0.28

2.34

1.35

0.90

0.48

2.74

3.08

9.25

15.70

4.50

6.20

3.20

15.20

3.28

9.65

16.10

4.90

0.70

6.80

1.0×45°

3.40

0.36

2.55

0.65

2.95

16.00

7 / 10

Yangzhou Yangjie Electronic Technology Co., Ltd.

(编号 Arail 10.5)

(版本号，日期)

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

9.75

10.15

a(度）

30°

Symbol

Min

4.4

Normal

Max

Symbol

Min

Normal

2.54

5.08

6.5

13.38

Max

4.5

1.3

2.4

4.6

1.33

2.5

1.27

2.3

6.3

13.0

6.7

13.5

3.5

0.7

0.9

1.25

0.45

15.3

9.1

1.42

0.6

4.6

3.6

0.5

15.7

9.2

16.1

9.3

ΦP

3.55

2.73

3.65

2.87

θ1（°）

9.7

9.9

10.2

8 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Symbol

Min

Max

6.60

5.40

4.60

6.20

0.65

0.90

Symbol

Min

0.45

1.51

Max

0.55

1.61

6.40

5.20

4.40

6.00

0.55

0.60

2.30

2.20

0.49

2.40

0.59

1.70

8.00

α1(度)

α2(度)

α3(度)

0.80

0.95

0.90

9.15

1.05

0.96

9.55

9 / 10

Yangzhou Yangjie Electronic Technology Co., Ltd.

(编号 Arail 10.5)

(版本号，日期)

www.21yangjie.com

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

Symbol

Min

Max

6.60

5.40

4.60

0.15

4.95

6.20

1.77

0.96

0.90

Symbol

Min

2.90

0.45

Max

3.10

0.55

6.40

5.20

4.40

0.00

4.65

6.00

1.57

0.90

0.60

2.30

2.20

0.49

2.40

0.59

1.70

1.40

0.00

0.49

1.60

10.00

0.52

θ(度)

Disclaimer

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or

otherwise.

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of

sale.

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http://

www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.

10 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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