U2M [YEASHIN]
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts; 表面装载反向电压 - 50到1000伏特
| 型号： | U2M |
| 厂家： | 
Yea Shin Technology Co., Ltd |
| 描述： | SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SEMICONDUCTOR
U2A Thru U2M
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTIFIERS FORWARD CURRENT - 2 Ampere
SMF Unit: inch ( mm )
0.195 (0.9)typical
FEATURES
‧ Glass passivated chip
‧ Ultra fast switching for high efficiency
‧ For surface mounted applications
‧ Low forward voltage drop and high current capability
(0.189)4.8
(0.173)4.4
5
‧ Low reverse leakage current
0.22
0.15
‧ Plastic material has UL flammability classification 94V-0
(0.052)1.3
(0.043)1.1
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
Z
5
Cathode Band
Top View
Detail
Z
enlarged
MECHANCALDATA
‧ Case: ITO-220AB full molded plastic package
‧ Case : Molded plastic
0.110(2.8)
1.43
1.38
0.095(2.4)
0.10 max
‧ Polarity : Indicated by cathode band
3.6
3.2
‧ Weight : 0.002 ounces, 0.064 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
UNITS
U2A
U2B
U2D
U2G
U2J
U2K
U2M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
100
1000
IAV
2.0
A
Rectified Current
@TL =75°C
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
60
A
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
VF
IR
1.0
1.3
5
1.5
1.7
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25°C
µA
pF
ns
@TJ =100°C
100
Maximum Reverse Recovery Time (Note 1)
Typical Junction
CJ
20
50
10
75
TRR
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES:
RӨJC
TJ
30
°C/W
°C
-55 to +150
-55 to +150
TSTG
°C
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
http://www.yeashin.com
1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
U2A Thru U2M
trr
+0.5A
0
-0.25
-1.0
NOTE:1.Rise Time = 7ns max.
1cm
SET TIME
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
BASE FOR
50 ns/cm
Source Impedance = 50 Ohms
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
TJ = 25 ¢J
TYPICAL
U2A
1.0
0.1
2.0
1.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
U2G
U2M
.01
25 50 75 100 125 150 175
.
2
.
6
0
.4
.8
1.0 1.2
1.4
¢J
LEAD TEMPERATURE,
Fig. 2-FORWARD CHARACTERISTICS
Fig. 3-FORWARD CURRENT DERATING CURVE
100
30
25
¢J
TJ = 25
f = 1.0MHz
Vsig = 50m Vp-p
8.3ms SINGLE HALF SINE WAVE
20
JEDEC METHOD
10
15
10
5
1
0.1
1
10
100
1
2
5
10
20
50
100
REVERSE VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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2
REV.02 20110725
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