CS7N65A1 [YFW]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET;


型号：	CS7N65A1
厂家：	DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
描述：	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件：	总6页 (文件大小：933K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

N-CHANNEL MOSFET CS7N65A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MAIN CHARACTERISTICS

I_D

V_DSS

650V

1.06Ω

R_DSON-typ(@V_GS=10V)

FEATURES



Fast Switching

Low ON Resistance

Low Gate Charge

100% Single Pulse avalanche energy Test

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA



Case: Molded plastic

Mounting Position: Any

Molded Plastic: UL Flammability Classification Rating 94V-0

Solder bath temperature275℃maximum,10s per JESD22-106

Case: TO-220AB TO-220F TO-263 TO-252 TO-251

PRODUCT SPECIFICATION CLASSIFICATION

Part Number

Package

TO-220AB

TO-220F(0.5mm)

TO-263

Mode Name

Pack

Tube

Tape

Tube

Tape

CS7N65A1

CS7N65A

CS7N65A2

CS7N65A3

CS7N65A3-R

CS7N65A4

TO-263

TO-251

CS7N65A5-R

TO-252

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N-CHANNEL MOSFET CS7N65A

Maximum Ratings at Tc=25°C unless otherwise specified

Value

Characteristics

Symbols

Units

220AB/263

220F

650

251/252

Drain-Source Voltage

Gate-Source Voltage

Continue Drain Current

VDS

VGS

±30

Pulsed Drain Current (Note1)

Power Dissipation

100

Single Pulse Avalanche Energy (Note1)

Operating Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case

350

m_J

°C

150

-55 to +150

3.57

62.5

STG

°C

1.25

62.5

1.25

100

θJC

θJA

°C/W

Thermal Resistance, Junction to Ambient

Note1:Pulse test: 300 μs pulse width, 2 % duty cycle

Maximum Ratings at Tc=25°C unless otherwise specified

Characteristics

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate Leakage Current

Test Condition

V_GS= 0 V,I_D= 250 μA

V_DS= 650 V, V_GS= 0 V

V_GS= ± 30 V, VDS = 0 V

V_DS= V_GS, I_D= 250 μA

V_GS= 10 V, I_D= 3.5 A

V_DS= 15 V, I_D= 3.5 A

Symbols

BV_DSS

I_DSS

Min

Typ

680

Max

Units

650

±100

I_GSS

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

Input Capacitance

V_GS(th)

R_DS(on)

gfs

1.06

6.5

1334

1.4

C_iss

V_GS= 0 V, V_DS= 2 V,

f = 200 KHz

Output Capacitance

C_oss

Reverse Transfer Capacitance

Turn-on Delay Time(Note2)

Rise Time(Note2)

C_rss

td(ON)

I_D= 7 A, V_DD= 325 V,

R_G= 10Ω

Turn-Off Delay Time(Note2)

Fall Time(Note2)

td(OFF)

Total Gate Charge(Note2)

Gate to Source Charge(Note2)

Gate to Drain Charge(Note2)

Q_G

I_D= 7 A, V_DD= 520 V,

V_GS= 10 V

Q_GS

Q_GD

Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified

Characteristics

Test Condition

Symbols

Min

Typ

Max

Units

Maximun Body-Diode Continuous Current

1.4

I_S

Tj=25°C

Maximun Body-Diode Pulsed

Current(Note2)

I_SM

Drain-Source Diode Forward Voltage

Reverse Recovery Time(Note2)

Reverse Recovery Charge(Note2)

I_SD= 7 A

V_SD

trr

370

1.9

I_SD= 7 A, V_GS= 0 V,

dI_F/ dt = 100 A/μs

Qrr

Note2:Pulse test: 300 μs pulse width, 2 % duty cycle

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N-CHANNEL MOSFET CS7N65A

RATINGS AND CHARACTERISTIC CURVES

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N-CHANNEL MOSFET CS7N65A

Package Outline Dimensions millimeters

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N-CHANNEL MOSFET CS7N65A

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N-CHANNEL MOSFET CS7N65A

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