MBR540DS [YFW]

Surface Mount Schottky Barrier Rectifier;


型号：	MBR540DS
厂家：	DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
描述：	Surface Mount Schottky Barrier Rectifier
文件：	总3页 (文件大小：477K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR540DS THRU MBR5200DS TO-252

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 40 to 200 V

Forward Current - 5 A

FEATURES



High current capability



Low forward voltage drop



High surge capability

High temperature soldering guaranteed

Mounting position: any

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA



Case: TO-252(D-PAK)



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.32g /0.011oz

TO-252(D-PAK)

Maximum Ratings and Electrical characteristics

Ratings at 25 ° ambient temperature unless otherwise specified.

Parameter

Symbols MBR540DS

MBR545DS

MBR560DS MBR5100DS MBR5150DS MBR5200DS Units

Maximum Repetitive Peak Reverse Voltage

RRM

RMS

31.5

100

150

105

150

200

140

200

Maximum RMS voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

100

IF(AV)

5.0

Peak Forward Surge Current, 8.3ms Single Half Sine-

wave Superimposed On Rated Load (JEDEC method)

IFSM

120

Maximum Instantaneous Forward Voltage at 5 A

0.65

0.70

0.85

0.90

0.92

Maximum Instantaneous Reverse Current TA = 25°C

0.1

0.05

at Rated DC Reverse Voltage

TA = 100°C

Typical Junction Capacitance^（1）

600

400

Typical Thermal Resistance ^（2）

Operating Junction Temperature Range

Storage Temperature Range

°C/W

θJA

-55 ~ +150

-55 ~ +175

°C

stg

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 10cm X 10cmX1mm copper pad areas.

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

1 / 3

MBR540DS THRU MBR5200DS TO-252

Fig.2 Typical Reverse Characteristics

Fig.1 TYPICAL FORWARD CURRENT DERATING CURVE

6.0

5.0

4.0

3.0

2.0

1.0

100

40~100V

150~200V

T_J=100°C

1.0

0.1

T_J=25°C

0.01

0.001

0.0

20 40 60 80 100 120 140 160 180

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage（%）

Fig.3 Typical Forward Characteristic

Fig.4 Typical Junction Capacitance

T_J=25°C

1000

500

100

40~45V

60V

100V

150V

200V

40~45V

60~200V

0.1

0.5

1.0

1.5

2.0

0.1

100

Instaneous Forward Voltage (V)

Reverse Voltage (V)

Fig.5 Maximum Non-Repetitive Peak

Forward Surage Current

Fig.6- Typical Transient Thermal Impedance

160

140

120

100

8.3 ms Single Half Sine Wave

(JEDEC Method)

0.01

100

0.1

100

Number of Cycles at 60Hz

t, Pulse Duration（sec）

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

2 / 3

MBR540DS THRU MBR5200DS TO-252

TO-252(D-PAK)

Package Outline

L1 L2 L3

UNIT

max

6.7 5.5 0.8 2.5 6.3 0.6 1.8

0.55 3.1 1.2 1.0 1.75 0.1

0.45 2.7 0.8 0.6 1.40 0.0

3.16 1.80 4.83

ref. ref. ref.

TYPICAL TYPICAL

2.29

1.8

1.3

mil

TYPICAL

min 6.3 5.1 0.3 2.1 5.9 0.4 1.3

max

264 217 31 98 248 24 71

min 248 201 12 83 232 16 51

22 122 47 39 69

18 106 31 24 55

TYPICAL

124 71 190

TYPICAL TYPICAL ref. ref. ref.

Marking on the body

Summary of Packing Options

Package

Packing Description

Tape/Reel,13”reel

Packing Quantity

2500

Industry Standard

EIA-481-1

TO-252(D-PAK)

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

3 / 3

相关型号：