U10T02 [YFW]

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE;
U10T02
型号: U10T02
厂家: DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD    DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
描述:

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE

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中文:  中文翻译
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U10T01 THRU U10T10 ABS  
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE  
RECTIFIER Reverse Voltage - 100 to 1000 V  
Forward Current 1.0A  
FEATURES  
Fast reverse recovery time  
Designed for Surface Mount Application  
Glass Passivated Chip Junction  
Low power loss, high efficiency  
Lead free in comply with EU RoHS 2011/65/EU directives  
1.Input pin(~)  
2.Input pin(~)  
MECHANICAL DATA  
Case: ABS/LBF  
Terminals: Solderable per MIL-STD-750, Method 2026  
3.Output Anode(+)  
4.Output Cathode(-)  
Approx. Weight: 88mg / 0.0031oz  
ABS/LBF  
Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.  
U10T01  
U10T02  
U10T04  
U10T06  
U10T08  
U10T10  
Parameter  
Symbols  
VRRM  
Units  
Maximum Repetitive Peak Reverse Voltage  
100  
200  
400  
600  
800  
1000  
V
V
V
Maximum RMS voltage  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
VRMS  
Maximum DC Blocking Voltage  
100  
1000  
VDC  
Average Rectified Output Current at Tc = 125 °C  
1.0  
Io  
A
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine-Wave Superimposed on Rated Load(JEDEC  
method)  
35  
IFSM  
Forward Voltage per element at 1.0A  
1.0  
1.3  
1.5  
VF  
V
5.0  
@T  
@T  
A
=25°C  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
IR  
μA  
A=125°C  
100  
Typical Junction CapacitanceNote1)  
Cj  
18  
pF  
nS  
Maximum Reverse Recovery Time Note2)  
50  
75  
TRR  
R
θJA  
72  
20  
Typical Thermal Resistance Note3)  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
-55 ~ +150  
Tj, Tstg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2Mounted on glass epoxy PC board with 4×1.5"×1.5"3.81×3.81 cmcopper pad.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  
U10T01 THRU U10T10 ABS  
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram  
50 ohm  
Noninductive  
10 ohm  
Noninductive  
trr  
+0.5  
D.U.T  
+
PULSE  
GENERATOR  
Note 2  
25Vdc  
approx  
0
-
-0.25  
1 ohm  
NonInductive  
OSCILLOSCOPE  
Note 1  
-1.0  
Note1.Rise Time = 7ns, max.  
Input Impedance = 1megohm,22pF.  
10ns/div  
2. Ries Time =10ns, max.  
Source Impedance = 50 ohms.  
Set time Base for 10ns/div  
Fig.3 Typical Reverse Characteristics  
Fig.2 Maximum Average Forward Current Rating  
300  
100LFM  
100  
1.0  
TJ=125°C  
TJ=75°C  
10  
0.5  
1.0  
0.1  
TJ=25°C  
Single phase half wave resistive  
or inductive  
0.0  
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
Case Temperature (°C)  
% of PIV.VOLTS  
Fig.3 Typical Instaneous Forward  
Characteristics  
Fig.4 Maximum Non-Repetitive Peak  
Forward Surage Current  
20  
10  
40  
30  
20  
10  
00  
TJ=25°C  
pulse with 300μs  
1% duty cycle  
1.0  
0.1  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
0.01  
1
10  
100  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
Instaneous Forward Voltage (V)  
Number of Cycles  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
2 / 3  
U10T01 THRU U10T10 ABS  
ABS/LBF  
Package Outline  
Plasticsurfacemountedpackage;4leads  
ALL ROUND  
ALL ROUND  
a
L1  
d
L
HE  
E
e
a
HE  
L1  
A
C
D
E
d
L
UNIT  
mm  
max  
1.5  
1.3  
59  
51  
0.22  
0.15  
8.7  
5.2  
4.9  
205  
193  
4.5  
4.2  
177  
166  
6.4  
6.0  
4.2  
3.8  
0.7  
0.5  
28  
20  
0.6  
0.2  
0.95  
min  
7°  
max  
252  
236  
165  
150  
24  
8
mil  
37  
min  
5.9  
The recommended mounting pad size  
6.2  
244  
4.0  
157  
1.0  
39  
2.0  
79  
mm  
(mil)  
Unit  
Summary of Packing Options  
Package  
ABS/LBF  
Packing Description  
Tape/Reel,13”reel  
Packing Quantity  
5000  
Industry Standard  
EIA-481-1  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
3 / 3  

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