ESD040224P080 [YINT]

Ultra Low Capacitance ESD Protection;
ESD040224P080
型号: ESD040224P080
厂家: Yint    Yint
描述:

Ultra Low Capacitance ESD Protection

文件: 总4页 (文件大小:502K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD Protection Diode  
ESD0402**P***  
Trustworthy electronic circuit protection expert  
Ultra Low Capacitance ESD Protection -ESD0402**P***  
Description  
The ESD0402**P*** in a 0402 package and will protect one  
bidirectional line. These devices are designed to portable applications such as  
cell phones, notebook computers, and PDAs. They offer superior electrical  
characteristics ultra low capacitance The ESD0402**P** are designed to  
protect sensitive semiconductor components from damage or upset due to  
electrostatic discharge (ESD),and other voltage induced transient events.  
Feature  
Schematic & PIN Configuration  
Case : 0402 package  
Ultra low capacitance  
Surface Mount Devices  
Compatible with IEC 61000-4-2(ESD) :Air 15KV , Contact 8KV  
Compatible with IEC 61000-4-4(EFT) :40A ,5/50 nS  
Applications  
USB3.0/USB2.0  
Smart Phones  
External Storage  
High speed data transmission line  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Units  
IEC61000-4-2 (Contact)  
IEC61000-4-2 (Air)  
VESD  
VESD  
TL  
>8  
KV  
KV  
>15  
Lead Soldering Temperature  
Operating Temperature  
Storage Temperature Range  
260 (10 sec)  
-40 to 85  
-40 to 85  
°C  
°C  
°C  
TJ  
TSTG  
www.yint.com.cn  
Rev:19.3  
1
ESD Protection Diode  
ESD0402**P***  
Trustworthy electronic circuit protection expert  
Electrical Characteristics (T =25°C)  
ESD040205P015  
Parameter  
Symbol  
Conditions  
Min.  
Min.  
Min.  
Typ.  
Max.  
Units  
Reverse Stand-off  
VRWM  
Voltage  
5.0  
V
V
Trigger voltage(VT)  
VT  
IR  
300  
Reverse Leakage  
Current  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
30  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.15  
pF  
ESD040208P030  
Parameter  
Symbol  
Conditions  
Typ.  
Max.  
Units  
Reverse Stand-off  
Voltage  
VRWM  
8.0  
V
V
Trigger voltage(VT)  
VT  
300  
Reverse Leakage  
Current  
IR  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
45  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.30  
pF  
ESD040212P060  
Parameter  
Symbol  
Conditions  
Typ.  
Max.  
Units  
Reverse Stand-off  
Voltage  
VRWM  
12  
V
V
Trigger voltage(VT)  
VT  
300  
Reverse Leakage  
Current  
IR  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
50  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.60  
pF  
www.yint.com.cn  
Rev:19.3  
2
ESD Protection Diode  
ESD0402**P***  
Trustworthy electronic circuit protection expert  
ESD040215P080  
Parameter  
Symbol  
Conditions  
Min.  
Min.  
Min.  
Typ.  
Max.  
Units  
Reverse Stand-off  
Voltage  
VRWM  
15  
V
V
Trigger voltage(VT)  
VT  
300  
Reverse Leakage  
Current  
IR  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
60  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.80  
pF  
ESD040218P080  
Parameter  
Symbol  
Conditions  
Typ.  
Max.  
Units  
Reverse Stand-off  
Voltage  
VRWM  
18  
V
V
Trigger voltage(VT)  
VT  
300  
Reverse Leakage  
Current  
IR  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
65  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.80  
pF  
ESD040224P080  
Parameter  
Symbol  
Conditions  
Typ.  
Max.  
Units  
Reverse Stand-off  
Voltage  
VRWM  
24  
V
V
Trigger voltage(VT)  
VT  
300  
Reverse Leakage  
Current  
IR  
VR  
=
VRWM  
1
μA  
VC  
CJ  
IPP=1A,  
tP = 8/20μs  
Clamping Voltage  
80  
V
VR=0V, f = 1MHz  
Junction Capacitance  
0.80  
pF  
www.yint.com.cn  
Rev:19.3  
3
ESD Protection Diode  
ESD0402**P***  
Trustworthy electronic circuit protection expert  
Rating & Characteristic Curves  
Figure 1- Insertion Loss I/O to GND  
Figure 2-  
Pulse Waveform  
PACKAGE OUTLINE DIMENSIONS  
DIMENSION(mm)  
CODE  
L
W
T
L1  
0.2±0.15/-0.1  
0402  
1.0±0.05  
0.5±0.05  
0.5±0.05  
Disclaimer  
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device  
performance may vary over time.  
Users should verify actual device performance in their specific applications.  
www.yint.com.cn  
Rev:19.3  
4

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