SSH176C5 [YUDEN]

RESISTOR, VOLTAGE DEPENDENT, SURFACE MOUNT, ROHS COMPLIANT;
SSH176C5
型号: SSH176C5
厂家: TAIYO YUDEN    TAIYO YUDEN
描述:

RESISTOR, VOLTAGE DEPENDENT, SURFACE MOUNT, ROHS COMPLIANT

电阻器
文件: 总6页 (文件大小:114K)
下载:  下载PDF数据表文档文件

SSH17N55

TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17A I(D) | TO-247VAR

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9 ETC

SSH17N55

Power Field-Effect Transistor, 17A I(D), 550V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH17N60A

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | TO-247VAR

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15 ETC

SSH20N45

N-CHANNEL POWER MOSFETS

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11 SAMSUNG

SSH20N45

Power Field-Effect Transistor, 20A I(D), 450V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH20N45A

Power Field-Effect Transistor, 20A I(D), 450V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH20N45A

Power Field-Effect Transistor, 20A I(D), 450V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH20N50

N-CHANNEL POWER MOSFETS

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45 SAMSUNG

SSH20N50

Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH20N50A

Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH20N50A

Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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1 SAMSUNG

SSH210

2.0AMPS. Surface Mount Schottky Barrier Rectifier

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19 TSC

SSH210

Surface Mount Schottk Barrier Rectifier

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15 TAYCHIPST

SSH210_13

2.0AMPS. Surface Mount Schottky Barrier Rectifier

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21 TSC

SSH210_14

Surface Mount Schottky Barrier Rectifier

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1 TSC