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元器件品牌
SSH210_13
[TSC]
2.0AMPS. Surface Mount Schottky Barrier Rectifier; 2.0AMPS 。表面贴装肖特基整流器
元器件型号：
SSH210_13
生产厂家：
TAIWAN SEMICONDUCTOR COMPANY, LTD
描述和应用：
2.0AMPS. Surface Mount Schottky Barrier Rectifier
2.0AMPS 。表面贴装肖特基整流器
PDF文件：
总4页 (文件大小：254K)
下载文档：
下载PDF数据表文档文件
型号参数：SSH210_13参数
查看货源
SSH210_14
Surface Mount Schottky Barrier Rectifier
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156
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1
TSC
SSH210HR5
Surface Mount Schottky Barrier Rectifier
Warning
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156
-
1
TSC
SSH22N35
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 22A I(D) | TO-247VAR
Warning
: Undefined variable $rtag in
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22
ETC
SSH22N35
Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
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156
-
0
SAMSUNG
SSH22N40
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-247VAR
Warning
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156
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22
ETC
SSH22N50
Advanced Power MOSFET
Warning
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156
-
60
FAIRCHILD
SSH22N50
Advanced Power MOSFET
Warning
: Undefined variable $rtag in
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156
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26
FAIRCHILD
SSH22N50A
Advanced Power MOSFET
Warning
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156
-
191
FAIRCHILD
SSH24D35
Output to 75A, 510 Vac with Diagnostics
Warning
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156
-
0
TELEDYNE
SSH24D50
Output to 75A, 510 Vac with Diagnostics
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156
-
0
TELEDYNE
SSH25N35
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 25A I(D) | TO-247VAR
Warning
: Undefined variable $rtag in
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156
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32
ETC
SSH25N35
Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
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156
-
0
SAMSUNG
SSH25N35A
Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
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156
-
0
SAMSUNG
SSH25N35A
Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
SSH25N40
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR
Warning
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156
-
20
ETC
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