BAS70-06 [ZETEX]
SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES; 硅平面双肖特基势垒二极管
| 型号： | BAS70-06 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES |
| 文件： | 总1页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70-04
BAS70-05
BAS70-06
SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995
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3
SOT23
2
3
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2
2
3
SERIES PAIR
COMMON CATHODE
COMMON ANODE
Device Type: BAS70-04
Partmarking Detail: 2Z
Device Type: BAS70-05 Device Type: BAS70-06
Partmarking Detail: 2Z5 Partmarking Detail: 1Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Ptot
VALUE
330
UNIT
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Breakdown Voltage
VBR
70
V
IR=10µA
VR=50V
Reverse Leakage Current IR
200
410
nA
mV
mA
pF
ps
Forward Voltage
Forward Current
Capacitance
VF
IF=1mA
IF
CT
τ
15
VF=1V
2.0
f=1MHz, VR=0
Effective Minority Lifetime
(1)
100
f=54MHz, Ipk= 20mA
(Krakauer Test Method)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
3 - 3
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