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BSR43-AR4 [ZETEX]

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS; SOT89 NPN硅平面中功率晶体管
BSR43-AR4
型号： BSR43-AR4
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
SOT89 NPN硅平面中功率晶体管

晶体 晶体管 局域网
文件： 总1页 (文件大小：17K)
中文：  中文翻译
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SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
BSR41  
BSR43  
ISSUE 3 – FEBRUARY 1996  
✪
COMPLEMENTARY TYPES  
–
–
BSR43 - BSR33  
BSR41 - BSR31  
C
PARTMARKING DETAIL  
BSR43 - AR4  
BSR41 - AR2  
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BSR41  
70  
BSR43  
90  
UNIT  
V
Collector-Base Voltage  
Collector-Em itter Voltage  
60  
80  
V
Em itter-Base Voltage  
5
2
V
Peak Pulse Current  
A
Continuous Collector Current  
Base Current  
IC  
1
A
IB  
100  
1
m A  
W
Power Dissipation at Tam b =25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
PTOT  
Tj:Tstg  
-65 to +150  
°C  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
BSR43  
V(BR)CBO  
90  
70  
IC=100µA  
Breakdown Voltage BSR41  
Collector-Em itter BSR43  
Breakdown Voltage BSR41  
Em itter-Base Breakdown Voltage V(BR)EBO  
V(BR)CEO  
80  
60  
V
IC=10m A *  
5
V
IE=10µA  
Collector Cut-Off Current  
ICBO  
100  
50  
nA  
µA  
VCB=60V  
V
CB=60V, Tam b =125°C  
IC =150m A, IB =15m A  
C =500m A, IB =50m A  
IC =150m A, IB =15m A  
C =500m A, IB =50m A  
C =100µA, VCE =5V  
C =100m A, VCE =5V  
C =500m A, VCE =5V  
Collector-Em itter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
0.25  
0.5  
V
V
I
Base-Em itter  
Saturation Voltage  
1.0  
1.2  
V
V
I
Static Forward  
Current Transfer Ratio  
30  
100  
50  
I
I
I
300  
Collector Capacitance  
Em itter Capacitance  
Transition Frequency  
Cc  
Ce  
fT  
12  
90  
pF  
VCB =10V, f=1MHz  
VEB =0.5V, f=1MHz  
pF  
100  
MHz  
IC=50m A, VCE=10V  
f =35MHz  
Turn-On Tim e  
Turn-Off Tim e  
Ton  
Toff  
250  
ns  
ns  
VCC=20V, IC =100m A  
IB1 =IB2 =5m A  
1000  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical characteristics graphs see FMMT493 datasheet.  
3 - 68  

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