BSS64 [ZETEX]
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; SOT23 NPN硅平面高电压晶体管
| 型号： | BSS64 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BSS64
ISSUE 2 SEPTEMBER 95
✪
E
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
BSS63
C
BSS64 - U3
BSS64R - U6
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
120
Collector-Emitter Voltage
80
5
V
Emitter-Base Voltage
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
100
mA
mW
°C
PTOT
tj:tstg
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
80
5
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
V
IC=4mA
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=100µA
Collector Cut-Off Current ICBO
100
50
nA
µ A
VCB=90V
VCB=90V,Tj=150 C
o
Emitter Cut-Off Current
IEBO
200
nA
VEB=5V
Collector-Emitter
Saturation Voltage
VCE(sat)
150
200
mV
mV
IC=4mA, IB=400µA
IC=50mA, IB=15mA
Base-Emitter Saturation
Voltage
VBE(sat)
1.2
mV
IC=4mA, IB=400µA
Static Forward Current
Typ.
60
80
hFE
IC=1mA, VCE=-1V
IC=10mA, VCE=1V
IC=20mA, VCE=1V
20
60
55
Transition Frequency
Output Capacitance
Typ.
100
fT
MHz
pF
VCE=10V, IC=4mA
f=35 MHz
Typ.
3
Cobo
5
VCB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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