BSS70RTC [ZETEX]

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon;

BSS70RTC


型号：	BSS70RTC
厂家：	ZETEX SEMICONDUCTORS
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon 晶体开关晶体管局域网
文件：	总1页 (文件大小：37K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SOT23 PNP SILICON PLANAR MEDIUM

POWER SWITCHING TRANSISTORS

BSS69

BSS70

ISSUE 2 SEPTEMBER 1995

✪

PARTMARKING DETAILS BSS69 - L2

BSS70 - L3

E

C

BSS69R - L6

BSS70R - L7

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-40

UNIT

V

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

V

-5

V

Peak Pulse Current

-200

mA

mA

mA

mW

°C

Continuous Collector Current

Base Current

I_C

-100

I_B

-50

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

t_j:t_stg

330

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT

CONDITIONS.

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector- Emitter Cut-off Current

V

V

V

I

-40

-40

-5

V

I =-1mA

I =-10µA

I =-10µA

V

V

-50

nA

V

=-30V

Collector-Emitter

Saturation Voltage

V

-0.25

-0.40

V

V

I =-10mA, I =-1mA

I =-50mA, I =-5mA*

Base-Emitter Saturation Voltage

V

h

-0.65

-0.85

-0.95

V

V

I =-10mA, I =-1mA

C

I =-50mA, I =-5mA*

Static Forward Current

Transfer Ratio

BSS69

30

40

50

30

15

I =-100µA,

I =-1mA,

150

300

I =-10mA, V =-1V

I =-50mA*,

I =-100mA*,

Static Forward Current

Transfer Ratio

BSS70

h

60

80

100

60

30

I =-100µA,

I =-1mA,

I =-10mA, V =-1V

I =-50mA*,

I =-100mA*,

Transition Frequency

BSS69

BSS70

f

200

250

MHz

MHz

I =-10mA, V =-20V

f=100MHz

Collector-Base Capacitance

Emitter-Base Capacitance

Noise Figure

C

C

N

4.5

10

pF

pF

dB

V

V

=-5V, f=100kHz

=-0.5V, f=100kHz

Typ. 5

I =-100µΑ, V =-5V

R =1kΩ, f=10Hz to15.7 kHz

Switching times: Delay; Rise

Storage Time

Fall Time

t ; t

35

ns

ns

ns

V

I

=-3V, I =-10mA

= I =-1mA

t

t

225

70

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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