FCX705 [ZETEX]
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR; 120V NPN硅高压达林顿晶体管![FCX705](http://pdffile.icpdf.com/pdf1/p00051/img/icpdf/FCX705_266313_icpdf.jpg)
型号: | FCX705 |
厂家: | ![]() |
描述: | 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
文件: | 总5页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FCX705
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
SUMMARY
VCEO=120V; VCE(sat)= 1.3V; IC= 1A
DESCRIPTION
This new NPN Darlington transistor provides users with very efficeint
perform ance com bining low VCE (sat) and very high Hfe to give extrem ely low
on state losses at 120V operation. This m akes it deal for use in a variety of
efficient driving functions including m otors, lam ps relays and solenoids and
will also benefit circuits requiring high output current switching.
S OT 8 9
FEATURES
•
•
•
•
•
Low Saturation Voltage
C
Hfe m in 3K @ 1A
IC= -2A Continuous
B
SOT89 package with Ptot - 1W
Specification is also available in Eline and SOT223 package outlines
APPLICATIONS
E
•
Various driving functions
- Lam ps
- Motors
- Relays and solenoids
•
High output current switches
E
C
ORDERING INFORMATION
C
B
DEVICE
REEL S IZE
TAPE WIDTH
(m m )
QUANTITY
PER REEL
(in ch e s )
FCX705TA
7
12m m e m b o s s e d 1000 u n its
Top View
DEVICE MARKING
705
ISSUE 2 - AUGUST 2001
1
FCX705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT NPN
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
V
V
V
-140
-120
-10
-4
CBO
CEO
EBO
V
V
Pe a k Pu ls e Cu rre n t
I
I
A
CM
Co n tin u o u s Co lle cto r Cu rre n t
-1
A
C
Po w e r Dis s ip a tio n a t TA=25°C (a )
Lin e a r De ra tin g Fa cto r
P
1
8
W
m W/°C
D
Po w e r Dis s ip a tio n a t TA=25°C (b )
Lin e a r De ra tin g Fa cto r
P
2.8
22
W
m W/°C
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
UNIT
°C/W
°C/W
J u n ctio n to Am b ie n t (a )
J u n ctio n to Am b ie n t (b )
R
R
125
45
θJ A
θJ A
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
ISSUE 2 - AUGUST 2001
2
FCX705
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT CONDITIONS .
Co lle cto r-Ba s e Bre a kd o w n
Vo lta g e
V
V
V
-140
-120
-10
V
V
V
I = -100A
C
(BR)CBO
(BR)CEO
Co lle cto r-Em itte r Bre a kd o w n
Vo lta g e
I = -10m A*
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
I = -100A
E
(BR)EBO
CBO
I
-100
-10
n A
µA
V
V
= -10V
CB
= -120V
CB
Ta m b = 100°C
Em itte r Cu t-Off Cu rre n t
I
I
-0.1
-10
µA
µA
V
= -8V
EB
EBO
Co lle cto r Em itte r Cu t-Off Cu rre n t
V
= -120V
CES
CES
Co lle cto r-Em itte r S a tu ra tio n
Vo lta g e
V
-1.3
-2.5
V
V
I = -1A, I = -1m A*
C B
CE(s a t)
I = -2A, I = -2m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
-1.8
-1.7
V
V
I = -1A, I = -1m A*
C B
BE(s a t)
BE(o n )
FE
I = -1A, V = -5V*
C
CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r
Ra tio
h
3K
3K
3K
2K
I = -50m A, V = -5V*
C CE
I = -500m A, V = -5V*
C
CE
30K
I = -1A, V = -5V*
C CE
I = -2A, V = -5V*
C
CE
Tra n s itio n Fre q u e n cy
f
160
MHz
I = -100m A, V = -10V
T
C
CE
f= 20MHz
In p u t Ca p a cita n ce
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
C
90
15
0.6
p F
p F
µs
V
= -500m V, f= 1MHz
= -10V, f= 1MHz
ib o
o b o
(o n )
CB
CB
V
t
t
I = -500m A, V = -10V
C CE
I
=I = -0.5m A
B1 B2
Tu rn -Off Tim e
0.8
µs
I = -500m A, V = -10V
C CE
(o ff)
I
=I = -0.5m A
B1 B2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Nb. Spice param eter data is available upon request for this device.
ISSUE 2 - AUGUST 2001
3
FCX705
NPN TYPICAL CHARACTERISTICS
-55°C
IC/IB=1000
+100°C
+25°C
-55°C
+25°C
+100°C
+175°C
VCE=-5V
1.8
1.6
1.4
1.2
16k
14k
12k
10k
1.0
0.8
0.6
0.4
8k
6k
4k
2k
0
0.2
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Am ps)
IC - Collector Current (Am ps)
hFE v IC
VCE(sat) v IC
2.4
-55°C
+25°C
-55°C
+25°C
VCE=-5V
IC/IB=1000
1.8
1.6
1.4
1.2
2.2
2.0
+100°C
+175°C
+100°C
1.8
1.6
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.2
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Am ps)
IC - Collector Current (Am ps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
ZTX704
1
10
100
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
ISSUE 2 - AUGUST 2001
4
FCX705
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
2.4
K
D B
4.0
1.5
G
F
N
DIM
Millim e tre s
Ma x
In ch e s
Ma x
1.2
1.0
3.2
1.2
Min
4.40
3.75
1.40
-
Min
A
B
C
D
F
4.60
0.173
.150
0.181
0.167
0.630
0.102
0.018
0.022
0.072
0.112
0.112
0.063
4.25
SOT89 pattern.
1.60
0.550
-
2.60
0.28
0.38
1.50
2.60
2.90
1.4
0.45
0.011
0.015
0.060
0.102
0.114
0.055
G
H
K
L
0.55
1.80
2.85
3.10
N
1.60
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
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Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1 agents and distributors in
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USA
major countries world-wide
© Zetex plc 2001
Kwai Fong
Hong Kong
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Telephone: (631) 543-7100
Fax: (631) 864-7630
Telephone:(852) 26100 611
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www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 2 - AUGUST 2001
5
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