FMMT459 [ZETEX]
450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR; 450V硅NPN高压开关晶体管型号: | FMMT459 |
厂家: | ZETEX SEMICONDUCTORS |
描述: | 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR |
文件: | 总6页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FMMT459
450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR
SUMMARY
CEO=450V; VCE(sat) = 100mV; IC= 150mA
V
DESCRIPTION
This new high voltage tranistor provides users with very effiecient
performance combining low VCE (sat) and Hfe to give extremely low on state
losses at 450V operation, making it ideal for use in high efficiency Telecom
and protected line switching applications.
SOT23
FEATURES
•
•
•
•
•
Low Saturation Voltage - 90mV @ 50mA
Hfe Min 50 @ 30 mA
IC=150mA Continuous
SOT23 package with Ptot 625mW
Specification can be supplied in larger package outlines
APPLICATIONS
•
•
•
•
Electronic test equipment
Off line switching circuits
Piezo Actuators.
E
B
C
RCD circuits.
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
Top View
FMMT459TA
FMMT459TC
7
8mm embossed
8mm embossed
3000 units
10000 units
13
DEVICE MARKING
459
ISSUE 2 - DECEMBER 2001
1
FMMT459
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
500
450
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
CBO
CEO
EBO
V
V
I
I
I
500
150
200
mA
mA
mA
CM
Continuous Collector Current
Base Current
C
B
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
625
5
mW
mW/°C
D
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
806
6.4
mW
mW/°C
D
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
200
155
°C/W
°C/W
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 2 - DECEMBER 2001
2
FMMT459
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
500
TYP.
700
MAX.
UNIT
V
CONDITIONS
Collector-Base
Breakdown Voltage
V
I
I
I
= 100µA
(BR)CBO
C
C
E
Collector-Emitter
Breakdown Voltage
V
450
5
500
8
V
V
= 10mA*
CEO(sus)
Emitter-Base
Breakdown Voltage
V
(BR)EBO
= 100µA
Collector Cut-Off
Current
I
100
nA
V
= 450V
CBO
CB
Emitter Cut-Off Current
I
I
100
100
nA
nA
V
V
= 5V
EBO
CES
EB
CE
Collector Emitter
Cut-Off Current
= 450V
Collector Emitter
V
60
70
75
90
.9
mV
mV
V
I
I
I
= 20mA, I = 2mA*
B
CE(sat)
BE(sat)
C
C
C
Saturation Voltage
= 50mA, I = 6mA*
B
Base-Emitter Saturation
Voltage
V
.76
= 50mA, I = 5mA*
B
Base-Emitter Turn-On
Voltage
V
.71
.9
V
I
= 50mA, V
= 10V*
BE(on)
C
CE
Static Forward Current
Transfer Ratio
H
50
50
120
70
I
I
I
= 30mA, V
= 50mA, V
= 10mA, V
= 10V*
= 10V*
= 20V
FE
T
C
C
C
CE
CE
CE
Transition Frequency
f
MHz
F = 20MH
Z
Output Capacitance
Turn-On Time
C
5
F
V
= 20V, f = 1MH
CB Z
OBO
P
t
113
ns
I
I
I
I
= 50mA, V = 100V
C
(on)
C
= 5mA, I = 10mA
B1
B2
Turn-Off Time
t
3450
ns
= 50mA, V = 100V
C
(off)
C
= 5mA, I = 10mA
B1
B2
*Measured under plused conditions. Pulse width = 300µs. Dury cycle <2%
NB. For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
ISSUE 2 - DECEMBER 2001
3
FMMT459
ELECTRICAL CHARACTERISTICS
1
0.40
IC/IB=20
Tamb=25°C
IC/IB=50
0.35
0.30
0.25
0.20
0.15
100°C
100m
10m
25°C
IC/IB=10
0.10
IC/IB=20
-55°C
0.05
1m
10m
100m
1m
10m
100m
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) vIC
V
CE(SAT) vIC
1.0
210
180
150
120
90
V =10V
IC/IB=20
CE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
0.8
0.6
0.4
-55°C
25°C
100°C
25°C
-55°C
60
30
0
1m
10m
100m
1m
10m
100m
IC Collector Current (A)
IC Collector Current (A)
V
BE(SAT) vIC
h vIC
FE
1.0
0.8
0.6
0.4
V =10V
CE
-55°C
25°C
100°C
1m
10m
100m
IC Collector Current (A)
VBE(ON) vIC
ISSUE 2 - DECEMBER 2001
4
FMMT459
THERMAL CHARACTERISTICS
1
100m
10m
1m
0.7
0.6
0.5
0.4
0.3
DC
1s
100ms
10ms
0.2
0.1
0.0
1ms
100µs
Single Pulse Tamb=25°C
10
100m
1
100
0
20 40 60 80 100 120 140 160
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
200
150
100
50
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 2 - DECEMBER 2001
5
FMMT459
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
DIM Millimetres
Inches
Min
Min
Max
3.05
1.40
1.10
0.53
0.15
Max
A
B
C
D
F
2.67
0.105
0.120
0.055
0.043
0.021
0.0059
1.20
0.047
–
–
0.37
0.0145
0.0033
NOM 0.075
0.0004
0.0825
NOM 0.037
0.085
NOM 1.9
0.01
G
K
L
0.10
2.50
0.004
2.10
0.0985
N
NOM 0.95
© Zetex plc 2001
Zetex plc
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Chadderton
Oldham, OL9 8NP
United Kingdom
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D-81673 München
Zetex Inc
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Hauppauge, NY11788
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USA
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - DECEMBER 2001
6
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