FMMT5179 [ZETEX]

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR; NPN硅平面高频三极管
FMMT5179
型号: FMMT5179
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR
NPN硅平面高频三极管

晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 局域网
文件: 总2页 (文件大小:66K)
中文:  中文翻译
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SOT23 NPN SILICON PLANAR  
HIGH FREQUENCY TRANSISTOR  
ISSUE 3 - JANUARY 1996  
FMMT5179  
FEATURES  
*
*
*
High fT=900MHz Min  
Max capacitance=1pF  
Low noise 4.5dB  
E
C
B
PARTMARKING DETAIL - 179  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
20  
12  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
2.5  
V
Continuous Collector Current  
Power Dissipation  
50  
mA  
mW  
°C  
Ptot  
330  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
VCEO(SUS) 12  
MAX.  
UNIT CONDITIONS.  
Collector-Emitter Sustaining  
Voltage  
V
V
V
IC= 3mA, IB=0  
IC= 1µA, IE=0  
IE=10µA, IC=0  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)EBO  
ICBO  
20  
Emitter-Base Breakdown  
Voltage  
2.5  
Collector Cut-Off  
Current  
0.02  
1.0  
V
CB=15V, IE=0  
µA  
µA  
VCB=15V, IE=0, Tamb=150°C  
Static Forward Current  
Transfer Ratio  
hFE  
25  
250  
0.4  
1.0  
IC=3mA, VCE=1V  
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(sat)  
V
V
Base-Emitter  
Saturation Voltage  
Transition Frequency  
fT  
900  
2000  
1
MHz IC=5mA, VCE=6V, f=100MHz  
Collector-Base Capacitance  
Small Signal Current Gain  
Ccb  
hfe  
pF  
IE=0, VCB=10V, f=1MHz  
25  
3
300  
14  
IC=2mA, VCE=6V, f=1KHz  
IE=2mA, VCB=6V, f=31.9MHz  
Collector Base Time Constant rb’Cc  
ps  
Noise Figure  
NF  
4.5  
dB  
IC=1.5mA, VCE=6V  
RS=50, f=200MHz  
Common-Emitter Amplifier  
Power Gain  
Gpe  
15  
dB  
IC=5mA, VCE=6V  
f=200MHz  
Spice parameter data is available upon request for this device  
3 - 169  
FMMT5179  
TYPICAL CHARACTERISTICS  
200  
1.0  
VCE=1V  
VCE=1V  
175°C  
-55°C  
0.8  
0.6  
0.4  
0.2  
150  
25°C  
100°C  
100°C  
175°C  
25°C  
100  
-55°C  
50  
0
0
0.1  
1
10  
100  
0.1  
1
10  
100  
IC - (m A)  
IC - (m A)  
hFE v IC  
VBE(on) v IC  
1500  
1000  
500  
1.2  
IE=0  
f=1MHz  
VCE=6V  
f=100MHz  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.1  
1
10  
100  
0
0.1  
1
10  
30  
IC - (m A)  
VCB - (Volts)  
T
C
CB  
C
CB  
v V  
f v I  
3 - 170  

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