FMMT5551-ZG1 [ZETEX]
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS; SOT23 NPN硅平面高压晶体管型号: | FMMT5551-ZG1 |
厂家: | ZETEX SEMICONDUCTORS |
描述: | SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS |
文件: | 总1页 (文件大小:31K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
FMMT5550
FMMT5551
ISSUE 4 - NOVEMBER 1996
✪
PARTMARKING DETAILS -
FMMT5550 1FZ
FMMT5551 ZG1
E
C
COMPLEMENTARY TYPES - FMMT5550 FMMT5400
FMMT5551 FMMT5401
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMT5550 FMMT5551
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
160
140
6
180
160
6
V
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
600
330
600
330
mA
mW
°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMT5550
FMMT5551
PARAMETER
SYMBOL
V(BR)CBO
MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
160
140
6
180
160
6
V
V
V
IC=100µA
IC=1mA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
Emitter-Base
Breakdown Voltage
IE=10µA*
Collector Cut-Off
Current
100
100
nA
µA
V
CB=100V
VCB=100V, TA=100°C
CB=120V
V
50 nA
50
VCB=120V, TA=100°C
µA
Static Forward
Current Transfer
Ratio
hFE
60
60
20
80
80
30
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
250
250
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
fT
0.15
0.25
0.15 V
0.20 V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter
Saturation Voltage
1.0
1.2
1.0
1.2
V
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Transition
Frequency
100
50
300
100
50
300 MHz IC=10mA, VCE=10V
f=100MHz
Output Capacitance Cobo
6.0
6.0 pF
260
VCB=10V, f=1MHz
Small Signal
hfe
200
IC=1mA, VCE=10V
f=1KHz
Noise Figure
NF
10
8
dB
IC=250µA, VCE=5V,
R =1KΩ
S
f=10Hz to 15.7KHz
Periodic Sample Test Only
PAGE NUMBER
.
相关型号:
FMMT5551TC
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
DIODES
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