FMMT555TC [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon,;
| 型号： | FMMT555TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT555
ISSUE 4 – AUGUST 2003
FEATURES
*
*
150 Volt VCEO
1 Amp continuous current
E
C
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMT455
555
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-160
Collector-Emitter Voltage
Emitter-Base Voltage
-150
V
-5
V
Peak Pulse Current
-2
-1
A
Continuous Collector Current
Base Current
IC
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX
UNIT
V
CONDITIONS.
IC=-100 A
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-160
-150
-5
Collector-Emitter
Breakdown Voltage
V
V
IC=-10mA*
IE=-100 A
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
-0.1
-10
V
CB =-140V
A
A
VCB =-140V, Tamb=100°C
IEBO
-0.1
-0.3
VEB=-4V
A
V
Collector-Emitter
Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE =-10V*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1
-1
V
V
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
50
50
IC=-10mA, VCE =-10V*
IC=-300mA, VCE =-10V*
300
Transition Frequency
fT
100
MHz
pF
IC=-50mA, VCE =-10V
f=100MHz
Output Capacitance
Cobo
10
VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 131
FMMT555
TYPICAL CHARACTERISTICS
ZTX554/ 55-2
IB1=IB2=IC/10
-0.8
tr ts
ns µs
ts
tf
ns
1000
IC/IB=10
500
400
300
5
4
3
-0.6
800
600
-0.4
-0.2
tf
td
ns
200
2
1
400 100
200 50
td
tr
100
0
0
0
0
0
-0.0001
-0.001
-0.01
-0.1
-0.01
-0.1
-1
-1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
-1.4
-1.2
-1.0
100
80
60
40
IC/IB=10
VCE=-10V
-0.8
-0.6
20
0
-0.0001
-0.001
-0.01
-0.1
-1
-0.0001
-0.001
-0.01
-0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
10
-1.4
-1.2
-1.0
-0.8
-0.6
1
VCE=-10V
0.1
0.01
DC
1s
100ms
10ms
1ms
100
s
0.001
-0.0001
-0.001
-0.01
-0.1
-1
0.1V
1V
10V
100V
1000V
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
3 - 132
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