FMMT718 [ZETEX]

SILICON POWER (SWITCHING) TRANSISTORS; 广颖电（开关）晶体管


型号：	FMMT718
厂家：	ZETEX SEMICONDUCTORS
描述：	SILICON POWER (SWITCHING) TRANSISTORS 广颖电（开关）晶体管晶体开关小信号双极晶体管光电二极管
文件：	总4页 (文件大小：357K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SuperSOT

FMMT717 FMMT718

FMMT720 FMMT722

FMMT723

SOT23 PNP SILICON POWER

(SWITCHING) TRANSISTORS

ISSUE 3 JUNE 1996

FEATURES

* 625mW POWER DISSIPATION

I_CCONT 2.5A

I_CUp To 10A Peak Pulse Current

Excellent h_feCharacteristics Up To 10A (pulsed)

Extremely Low Saturation Voltage E.g. 10mV Typ.

Exhibits extremely low equivalent on-resistance; R_CE(sat)

DEVICE TYPE

FMMT717

FMMT718

FMMT720

FMMT722

FMMT723

COMPLEMENT

FMMT617

FMMT618

FMMT619

PARTMARKING

R_CE(sat)

717

718

720

722

723

72mΩ at 2.5A

97mΩ at 1.5A

163mΩ at 1.5A

FMMT624

ABSOLUTE MAXIMUM RATINGS

FMMT FMMT FMMT FMMT FMMT

PARAMETER

SYMBOL

717

-12

-5

718

-20

-5

720

722

-70

-5

723

-100

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current**

Continuous Collector Current

Base Current

V_CBO

V_CEO

V_EBO

I_CM

I_C

-40

-5

-10

-2.5

-6

-4

-3

-2.5

-1

-1.5

I_B

-500

625

-55 to +150

°C

Power Dissipation at T_amb=25°C* P_tot

Operating and Storage

Temperature Range

T_j:T_stg

*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic

substrate measuring 15x15x0.6mm

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

3 - 159

FMMT722

FMMT723

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

FMMT722

FMMT723

PARAMETER

SYMBOL

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

-70

-5

-150

-125

-8.8

-100 -200

I =-100µA

I =-10mA*

I =-100µA

Collector-Emitter

Breakdown Voltage

-100 -160

Emitter-Base

Breakdown Voltage

-5

-8.8

Collector Cut-Off

Current

-100

-50

-100 nA

=-60V

=-80V

Emitter Cut-Off

Current

-100 nA

=-4V

Collector Emitter

Cut-Off Current

-100 nA

=-60V

=-80V

Collector-Emitter

Saturation Voltage

-35

-50

-80

I =-0.1A, I =-10mA*

I =-0.5A, I =-20mA*

I =-0.5A, I =-50mA*

I =-1A, I =-100mA*

I =-1A, I =-150mA*

I =-1.5A, I =-200mA*

-135 -200

-140 -220

-175 -260

-125 -200 mV

-210 -330 mV

Base-Emitter

Saturation Voltage

-0.89 -1.0

I =-1A, I =-150mA*

I =-1.5A, I =-200mA*

-0.94 -1.05

Base-Emitter

Turn-On Voltage

-0.71 -1.0

I =-1A, V =-10V*

I =-1.5A, V =-5V*

-0.78 -1.0

470

Static Forward

Current Transfer

Ratio

300

I =-10mA, V =-5V*

I =-10mA, V =-10V*

I =-0.1A, V =-5V*

I =-0.1A, V =-10V*

I =-0.5A, V =-10V*

I =-1A, V =-5V*

300

475

450

300

250

450

375

175

275

250

I =-1A, V =-10V*

I =-1.5A, V =-5V*

I =-1.5A, V =-10V*

I =-3A, V =-5V*

Transition

Frequency

150

200

150

200

MHz I =-50mA, V =-10V

f=100MHz

Output Capacitance

Turn-On Time

=-10V, f=1MHz

=-50V, I =-0.5A

=I =-50mA

Turn-Off Time

700

760

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 165

FMMT722

TYPICAL CHARACTERISTICS

0.6

0.5

0.4

0.5

0.4

0.3

0.2

0.1

0.0

0.3

0.2

0.1

0.0

1mA

10mA

100mA

10A

1mA

10mA

100mA

10A

Collector Current

VBE(SAT) vs IC

VCE(SAT) vs IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

0.2

0.0

450

225

0.0

1mA

10mA

100mA

10A

1mA

10mA

100mA

10A

Collector Current

hFE vs IC

VBE(SAT) vs IC

SINGLE PULSE TEST

= 25 deg C

1.0

0.8

0.6

0.4

0.2

1.0

0.1

0.0

0.01

0.1

100

1mA

10mA

100mA

10A

Collector Current

VCE (VOLTS)

Safe Operating Area

VBE(ON) vs IC

3 - 166

FMMT617 FMMT624

FMMT618 FMMT625

FMMT619

FMMT717 FMMT722

FMMT718 FMMT723

FMMT720

SuperSOT Series

THERMAL CHARACTERISTICS AND DERATING INFORMATION

DERATING CURVE

MAXIMUM TRANSIENT THERMAL RESISTANCE

* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate

3 - 158

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