FMMTL717 [ZETEX]
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR; PNP硅平面高增益介质功率晶体管
| 型号： | FMMTL717 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FMMTL717
FEATURES
Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A
E
COMPLEMENTARY TYPE – FMMTL617
C
PARTMARKING DETAIL –
L77
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
-12
-12
Collector-Emitter Voltage
Emitter-Base Voltage
V
-5
V
Continuous Collector Current
Peak Pulse Current
-1.25
-4
A
ICM
A
Base Current
IB
-200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
-500
Tj:Tstg
-55 to +150
FMMTL717
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-12
-35
-25
-8.5
IC=-100µA
Collector-Emitter
Breakdown Voltage
-12
V
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
-5
IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
-10
-10
-10
nA
nA
nA
VCB=-10V
VEB=-4V
VCE=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-24
-40
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
-94
-140
-240
-290
-160
-200
IC=-1.25A,IB=-50mA
Base-Emitter
VBE(sat)
VBE(on)
hFE
-970
-1100
mV
IC=-1.25A, IB=-50mA*
IC=-1.25A, VCE=-2V*
Saturation Voltage
Base-Emitter
Turn On Voltage
-875
-1000
mV
Static Forward
Current Transfer Ratio
300
300
180
100
50
490
450
275
180
110
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
Transition Frequency
fT
205
MHz
pF
IC=-50mA, VCE=-10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
15
20
VCB=-10V, f=1MHz
Switching times
ton
toff
76
149
ns
ns
IC=-1A, VCC=-10V
IB1=IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL717
TYPICAL CHARACTERISTICS
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
IC/IB=10
+25°C
IC/IB=10
IC/IB=20
IC/IB=50
-55°C
+25°C
+100°C
+150°C
1m
1m
0.1
10m
100m
1
10
1m
1m
1m
10m
100m
1
10
10
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
IC/IB=10
800
400
0
VCE=2V
1.2
0.8
0.4
0
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
10m
100m
1
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10
VCE=2V
1.6
1.2
0.8
0.4
0
-55°C
+25°C
+100°C
+150°C
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
1
10
100
10m
100m
1
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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