FXT453STOB [ZETEX]
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | FXT453STOB |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总1页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
FXT453
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
*
*
*
100 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
B
C
E
REFER TO ZTX453 FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
120
Collector-Emitter Voltage
Emitter-Base Voltage
100
V
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
1
1
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 120
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA, IC=0
VCB=100V, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 100
V
V
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
Collector Cut-Off
Current
ICBO
0.1
µA
Emitter Cut-Off Current IEBO
0.1
0.7
VEB=4V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=150mA, IB=15mA*
IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.3
V
Static Forward Current hFE
Transfer Ratio
40
10
200
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
Transition
Frequency
fT
150
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
VCB=10V, f=1MHz
3-33
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