FZT753 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | FZT753 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FZT753
FEATURES
C
*
*
Low saturation voltage
Excellent hFE specified up to 2A
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT653
FZT753
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-120
Collector-Emitter Voltage
-100
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-2
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-120
-100
-5
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=-100µA
Collector Cut-Off Current ICBO
-0.1
-10
V
CB=-100V
µA
µA
VCB=-100V,T =100°C
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
-1.25
V
I =-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
-0.8
-1.0
V
I =-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
70
100
55
200
200
170
55
IC=-50mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
300
30
25
IC=-2A, VCE =-2V*
Transition Frequency
fT
100
140
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
pF
ns
ns
VCB =-10V f=1MHz
40
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
toff
600
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 236
FZT753
TYPICAL CHARACTERISTICS
I - Collector Current (Amps)
I - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
I - Collector Current (Amps)
I - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
µ
V
- Collector Emitter Voltage (V)
I - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
3 - 237
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