UFMMT459TA [ZETEX]

Small Signal Bipolar Transistor, 0.15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
UFMMT459TA
型号: UFMMT459TA
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

Small Signal Bipolar Transistor, 0.15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

开关 光电二极管 晶体管
文件: 总6页 (文件大小:251K)
中文:  中文翻译
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FMMT459  
500V Silicon NPN high voltage switching transistor  
Summary  
V
V
> 500V  
> 6V  
= 150 mA  
(BR)CEV  
(BR)ECV  
I
c(cont)  
V
= 70 mV @ 50 mA  
ce(sat)  
Description  
This new high voltage transistor provides users with very efficient performance, combining low  
V
high Hfe to give extremely low on state losses at 500V operation, making it ideal for use  
CE(SAT)  
in high efficiency Telecom and protected line switching applications.  
Features  
6V reverse blocking capability  
Low saturation voltage - 90mV @ 50mA  
Hfe Ͼ 50 @ 30 mA  
I =150mA continuous  
C
SOT23 package with Ptot 625mW  
Specification can be supplied in other package outlines  
Applications  
Electronic test equipment  
Offline switching circuits  
Piezo actuators  
RCD circuits  
Ordering information  
Pin out - top view  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
FMMT459TA  
FMMT459TC  
7
8
8
3,000  
13  
10,000  
Device marking  
459  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
1
www.zetex.com  
FMMT459  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
500  
500  
450  
6
V
CBO  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Emitter-collector voltage  
Peak pulse current  
V
V
V
V
V
A
A
A
CEV  
CEO  
EBO  
V
V
V
6
ECV  
CM  
I
0.5  
0.15  
0.2  
*
I
I
C
B
Continuous collector current  
Base current  
*
P
625  
5
mW  
mW/°C  
Power dissipation @ T =25°C  
Linear derating factor  
D
A
P
806  
6.4  
mW  
mW/°C  
D
Power dissipation @ T =25°C  
Linear derating factor  
A
Operating and storage temperature range  
T :T  
-55 to  
+150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
*
R
R
200  
°C/W  
JA  
JA  
Junction to ambient  
155  
°C/W  
Junction to ambient  
NOTES:  
*
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions  
as above measured at t<5secs.  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
2
www.zetex.com  
FMMT459  
Thermal characteristics  
1
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
100m  
DC  
1s  
100ms  
10m  
1m  
10ms  
1ms  
100µs  
Single Pulse Tamb=25°C  
10  
100m  
1
100  
0
20  
40  
60  
80 100 120 140 160  
V
Collector-Emitter Voltage (V)  
Temperature (°C)  
CE  
Derating Curve  
Safe Operating Area  
200  
150  
100  
50  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
0
100µ 1m  
10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
3
www.zetex.com  
FMMT459  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit Conditions  
Collector-base  
BV  
500  
700  
V
I = 100A  
C
CBO  
breakdown voltage  
Collector-emitter  
BV  
500  
700  
V
I = 10A,  
C
CEV  
breakdown voltage  
0.3V > V > -1V  
BE  
*
Collector-emitter  
breakdown voltage  
BV  
BV  
BV  
450  
6
500  
8.1  
8.1  
V
V
V
CEO  
EBO  
ECV  
I = 10mA  
C
Emitter-base  
breakdown voltage  
I = 100A  
E
Emitter-base  
6
I = 1A,  
C
breakdown voltage  
(reverse blocking)  
0.3V > V  
> -6V  
BC  
Collector-emitter  
cut-off current  
I
100  
100  
100  
nA  
nA  
nA  
V
V
V
=450V  
CES  
CE  
CB  
EB  
Collector-base  
cut-off current  
I
=450V  
=5V  
CBO  
Emitter-base  
I
EBO  
cut-off current  
Static forward current  
transfer ratio  
H
50  
120  
70  
I = 30mA, V = 10V  
C CE  
FE  
*
I = 50mA , V = 10V  
C
CE  
*
*
Collector-emitter  
saturation voltage  
V
V
60  
75  
90  
mV  
mV  
CE(sat)  
BE(sat)  
I = 20mA, I = 2mA  
C B  
70  
I = 50mA, I = 6mA  
C
B
*
Base-emitter  
saturation voltage  
0.76  
0.71  
0.9  
0.9  
V
V
I = 50mA, I = 5mA  
C
B
*
Base-emitter turn-on  
voltage  
V
BE(on)  
I = 50mA, V = 10V  
C
CE  
Transition frequency  
f
50  
MHz I = 10mA, V = 20V  
T
C
CE  
f = 20MHZ  
Output capacitance  
Turn-on time  
C
5
F
V
= 20V, f = 1MHZ  
CB  
obo  
P
t
113  
ns  
I = 50mA, V = 100V  
(ON)  
C
C
I
= 5mA, I = 10mA  
B2  
B1  
Turn-off time  
t
3450  
ns  
I = 50mA, V = 100V  
(OFF)  
C
C
I
= 5mA, I = 10mA  
B2  
B1  
NOTES:  
*
Measured under pulsed conditions. Pulse width = 300s; duty cycle <2%  
Note: For high voltage applications, the appropriate industry sector guidelines should be  
considered with regards to voltage spacing between Terminals.  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
4
www.zetex.com  
FMMT459  
Electrical characteristics  
1
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
IC/IB=20  
Tamb=25°C  
IC/IB=50  
100m  
100°C  
25°C  
IC/IB=10  
100m  
IC/IB=20  
-55°C  
10m  
1m  
10m  
1m  
10m  
100m  
IC Collector Current (A)  
IC Collector Current (A)  
V
CE(SAT) v IC  
V
CE(SAT) v IC  
1.0  
0.8  
0.6  
0.4  
210  
180  
150  
120  
90  
V =10V  
IC/IB=20  
CE  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100°C  
-55°C  
25°C  
100°C  
25°C  
-55°C  
60  
30  
0
1m  
10m  
100m  
1m  
10m  
100m  
IC Collector Current (A)  
IC Collector Current (A)  
VBE(SAT) v IC  
h v IC  
FE  
1.0  
0.8  
0.6  
0.4  
V =10V  
CE  
-55°C  
25°C  
100°C  
1m  
10m  
100m  
IC Collector Current (A)  
VBE(ON) v IC  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
5
www.zetex.com  
FMMT459  
Packaging details - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Package dimensions  
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.  
Dim.  
Millimeters  
Inches  
Min.  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
Max.  
0.120  
0.055  
0.043  
0.021  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
3.05  
1.40  
1.10  
0.53  
0.15  
0.105  
0.047  
-
H
K
L
0.51  
0.10  
2.50  
0.64  
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
M
N
-
0.0034 0.0059  
0.075 Nom.  
0.95 Nom.  
0.0375 Nom.  
G
1.90 Nom.  
-
-
-
-
Europe  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Germany  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 5 - August 2005  
© Zetex Semiconductors plc 2005  
6
www.zetex.com  

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