UFMMT459TA [ZETEX]
Small Signal Bipolar Transistor, 0.15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;型号: | UFMMT459TA |
厂家: | ZETEX SEMICONDUCTORS |
描述: | Small Signal Bipolar Transistor, 0.15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总6页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FMMT459
500V Silicon NPN high voltage switching transistor
Summary
V
V
> 500V
> 6V
= 150 mA
(BR)CEV
(BR)ECV
I
c(cont)
V
= 70 mV @ 50 mA
ce(sat)
Description
This new high voltage transistor provides users with very efficient performance, combining low
V
high Hfe to give extremely low on state losses at 500V operation, making it ideal for use
CE(SAT)
in high efficiency Telecom and protected line switching applications.
Features
■ 6V reverse blocking capability
■ Low saturation voltage - 90mV @ 50mA
■ Hfe Ͼ 50 @ 30 mA
■ I =150mA continuous
C
■ SOT23 package with Ptot 625mW
■ Specification can be supplied in other package outlines
Applications
■ Electronic test equipment
■ Offline switching circuits
■ Piezo actuators
■ RCD circuits
Ordering information
Pin out - top view
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
FMMT459TA
FMMT459TC
7
8
8
3,000
13
10,000
Device marking
459
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
1
www.zetex.com
FMMT459
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
500
500
450
6
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Emitter-collector voltage
Peak pulse current
V
V
V
V
V
A
A
A
CEV
CEO
EBO
V
V
V
6
ECV
CM
I
0.5
0.15
0.2
*
I
I
C
B
Continuous collector current
Base current
*
P
625
5
mW
mW/°C
Power dissipation @ T =25°C
Linear derating factor
D
A
†
P
806
6.4
mW
mW/°C
D
Power dissipation @ T =25°C
Linear derating factor
A
Operating and storage temperature range
T :T
-55 to
+150
°C
j
stg
Thermal resistance
Parameter
Symbol
Value
Unit
*
R
R
200
°C/W
⍜JA
⍜JA
Junction to ambient
†
155
°C/W
Junction to ambient
NOTES:
*
†
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions
as above measured at t<5secs.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
2
www.zetex.com
FMMT459
Thermal characteristics
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100m
DC
1s
100ms
10m
1m
10ms
1ms
100µs
Single Pulse Tamb=25°C
10
100m
1
100
0
20
40
60
80 100 120 140 160
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
200
150
100
50
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
3
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FMMT459
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base
BV
500
700
V
I = 100A
C
CBO
breakdown voltage
Collector-emitter
BV
500
700
V
I = 10A,
C
CEV
breakdown voltage
0.3V > V > -1V
BE
*
Collector-emitter
breakdown voltage
BV
BV
BV
450
6
500
8.1
8.1
V
V
V
CEO
EBO
ECV
I = 10mA
C
Emitter-base
breakdown voltage
I = 100A
E
Emitter-base
6
I = 1A,
C
breakdown voltage
(reverse blocking)
0.3V > V
> -6V
BC
Collector-emitter
cut-off current
I
100
100
100
nA
nA
nA
V
V
V
=450V
CES
CE
CB
EB
Collector-base
cut-off current
I
=450V
=5V
CBO
Emitter-base
I
EBO
cut-off current
Static forward current
transfer ratio
H
50
120
70
I = 30mA, V = 10V
C CE
FE
*
I = 50mA , V = 10V
C
CE
*
*
Collector-emitter
saturation voltage
V
V
60
75
90
mV
mV
CE(sat)
BE(sat)
I = 20mA, I = 2mA
C B
70
I = 50mA, I = 6mA
C
B
*
Base-emitter
saturation voltage
0.76
0.71
0.9
0.9
V
V
I = 50mA, I = 5mA
C
B
*
Base-emitter turn-on
voltage
V
BE(on)
I = 50mA, V = 10V
C
CE
Transition frequency
f
50
MHz I = 10mA, V = 20V
T
C
CE
f = 20MHZ
Output capacitance
Turn-on time
C
5
F
V
= 20V, f = 1MHZ
CB
obo
P
t
113
ns
I = 50mA, V = 100V
(ON)
C
C
I
= 5mA, I = 10mA
B2
B1
Turn-off time
t
3450
ns
I = 50mA, V = 100V
(OFF)
C
C
I
= 5mA, I = 10mA
B2
B1
NOTES:
*
Measured under pulsed conditions. Pulse width = 300s; duty cycle <2%
Note: For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com
FMMT459
Electrical characteristics
1
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
IC/IB=20
Tamb=25°C
IC/IB=50
100m
100°C
25°C
IC/IB=10
100m
IC/IB=20
-55°C
10m
1m
10m
1m
10m
100m
IC Collector Current (A)
IC Collector Current (A)
V
CE(SAT) v IC
V
CE(SAT) v IC
1.0
0.8
0.6
0.4
210
180
150
120
90
V =10V
IC/IB=20
CE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
-55°C
25°C
100°C
25°C
-55°C
60
30
0
1m
10m
100m
1m
10m
100m
IC Collector Current (A)
IC Collector Current (A)
VBE(SAT) v IC
h v IC
FE
1.0
0.8
0.6
0.4
V =10V
CE
-55°C
25°C
100°C
1m
10m
100m
IC Collector Current (A)
VBE(ON) v IC
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
5
www.zetex.com
FMMT459
Packaging details - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Min.
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
-
Max.
Max.
0.120
0.055
0.043
0.021
Min.
0.33
0.01
2.10
0.45
Max.
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
3.05
1.40
1.10
0.53
0.15
0.105
0.047
-
H
K
L
0.51
0.10
2.50
0.64
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
M
N
-
0.0034 0.0059
0.075 Nom.
0.95 Nom.
0.0375 Nom.
G
1.90 Nom.
-
-
-
-
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Americas
Asia Pacific
Corporate Headquarters
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
6
www.zetex.com
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