UFZT958 [ZETEX]
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;
| 型号： | UFZT958 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin |
| 文件： | 总5页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FZT957
FZT958
FEATURES
*
*
*
*
1 Amp continuous current
Up to 2 Amps peak current
C
Very low saturation voltage
Excellent gain characteristics specified up to 1 Amp
E
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
C
B
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
FZT957
-300
FZT958
-400
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-300
-400
V
-6
V
Peak Pulse Current
-2
-1
-1.5
-0.5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
A
Ptot
3
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289
FZT957
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-330
-330
-300
-6
-440
-440
-400
-8
V
V
V
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
IC=-1µA, RB ≤1kΩ
IC=-10mA*
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-60
-110
-170
-100
-165
-240
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-1A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-910
-750
-1150 mV
-1020 mV
IC=-1A, IB=-300mA*
IC=-1A, VCE=-10V*
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
100
100
90
200
200
170
10
IC=-10mA, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-10V*
IC=-2A, VCE=-10V*
300
Transition Frequency
fT
85
23
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
VCB=-20V, f=1MHz
ton
toff
108
2500
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 290
FZT957
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
Single Pulse Test Tamb=25C
10
1
0.1
µ
0.01
1
100
1000
10
I
- Collector Current (Amps)
VCE - Collector Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 291
FZT958
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-400
-400
-400
-6
-600
-600
-550
-8
V
V
V
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
IC=-1µA, RB ≤1kΩ
IC=-10mA*
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-830
-725
-950
-840
mV
mV
IC=-500mA, IB=-100mA*
IC=-500mA, VCE=-10V*
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
100
100
10
200
200
20
IC=-10mA, VCE=-10V*
IC=-500mA, VCE=-10V*
IC=-1A, VCE=-10V*
300
Transition Frequency
fT
85
19
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
VCB=-20V, f=1MHz
ton
toff
104
2400
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 292
FZT958
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
Single Pulse Test Tamb=25C
10
1
0.1
µ
0.01
1
100
1000
10
I
- Collector Current (Amps)
VCE - Collector Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 293
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