UZVN4106F [ZETEX]
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | UZVN4106F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 N-CHANNEL ENHANCEMENT
ZVN4106F
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo lta g e
60
Co n tin u o u s Drain Cu rren t at Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
0.2
3
A
IDM
A
Ga te-S o u rce Vo lta g e
VGS
V
± 20
Max Po w e r Dis s ip a tio n at Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
330
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre a kd o w n
Vo lta g e
BVDS S
60
V
ID=1m A, VGS=0V
Ga te-S o u rce Th re s h o ld
Vo lta g e
VGS (th )
1.3
3
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
100
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
10
50
VDS=60V, VGS=0
µA
µA
VDS=48V, VGS=0V, T=125°C(2)
On -S ta te Dra in Cu rre n t(1)
ID(o n )
1
A
VDS=25V, VGS=10V
VGS=10V, ID=500m A
S tatic Drain -S o u rce On -S ta te
Res ista n ce (1)
RDS (o n )
2.5
5
Ω
Ω
VGS=5V, ID=200m A
Fo rw a rd Tra n s co n d u ctan ce(1)(2g fs
)
150
m S
VDS=25V, ID=250m A
In p u t Ca p a cita n ce (2)
Cis s
Co s s
35
25
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
VDS=25V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r Cap acita n ce Crs s
(2)
8
p F
Tu rn -On De la y Tim e (2)(3)
Ris e Tim e (2)(3)
Td (o n )
5
7
6
8
n s
n s
n s
n s
Tr
VDD ≈25V, ID=150m A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
Td (o ff)
Tf
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 500Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
3 - 399
ZVN4106F
4
3
2
1
0
100
10
1
VGS=3.5V
4V
5V
VGS=20V
6V
16V
14V
12V
8V
10V
9V
8V
7V
6V
10V
14V
20V
5V
4V
0
2
4
6
8
10
0.01
0.1
1
10
VDS - Drain Source Voltage (V)
ID - Drain Current (A)
Saturation Characteristics
On-Resistance v Drain Current
1.8
1.2
0.6
0
300
200
100
0
VDS=10V
ID=0.5A
R
DS(on)
VGS(th)
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
Tj - J unction Tem perature ( °C)
ID(on) - Drain Current (A)
Norm alised RDS(on) & VGS(th) v Tem perature
Transconductance v Drain Current
80
16
12
8
ID=0.5A
VDD=20V
40V
50V
60
40
Cis s
4
20
Cos s
Crss
0
0
0
15
30
45
60
0
0.6
1.2
1.8
VDS - Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
3 - 400
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