ZDT758 [ZETEX]
DUAL PNP MEDIUM POWER TRANSISTORS; 双PNP中功率晶体管
| 型号： | ZDT758 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | DUAL PNP MEDIUM POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM-8 DUAL PNP MEDIUM POWER
ZDT758
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C1
C1
C2
C2
B1
E1
B2
E2
SM-8
PARTMARKING DETAIL T758
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-400
-400
V
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
IC
-0.5
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 354
ZDT758
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -400
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-320V
VCE=-320V
VEB=-4V
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
Collector Cutoff
Current
ICBO
-100
-100
-100
nA
nA
nA
Collector Cutoff
Current
ICES
Emitter Cutoff Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-0.9
V
V
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-5V*
Base-Emitter
Turn On Voltage
VBE(on)
Static Forward Current hFE
Transfer Ratio
50
50
40
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
Transition
Frequency
fT
50
MHz
pF
IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Switching times
Cobo
20
VCB=-20V, f=1MHz
ton
toff
140
2000
ns
ns
IC=-100mA, VC=-100V
IB1=10mA, IB2=-20mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 355
ZDT758
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I
- Collector Current (Amps)
VBE(on) v IC
3 - 356
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