ZTX415STOB [ZETEX]
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZTX415STOB |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX415
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
*
*
*
Specifically designed for Avalanche mode operation
60A Peak Avalanche Current (Pulse width=20ns)
Low inductance package
APPLICATIONS
*
*
*
*
Laser LED drivers
C
B
E
Fast edge generation
High speed pulse generators
Suitable for single, series and parallel operation
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
260
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
6
500
V
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
mA
A
ICM
60
Ptot
680
mW
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
TYP.
PARAMETER
SYMBOL MIN.
V(BR)CES 260
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=1mA
Tamb= -55 to +175°C
Collector-Emitter
Breakdown Voltage
VCEO(sus) 100
IC=100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
6
IE=10µA
Collector Cut-Off
Current
0.1
10
V
V
CB=180V
CB=180V, Tamb=100°C
µA
µA
Emitter Cut-Off Current IEBO
0.1
0.5
V
EB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
ISB
V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
0.9
V
IC=10mA, IB=1mA*
Current in Second
Breakdown (Pulsed)
15
25
A
A
VC=200V, CCE=620pF
VC=250V, CCE=620pF
Static Forward Current hFE
Transfer Ratio
25
IC=10mA, VCE=10V*
Transition Frequency
fT
40
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Capacitance
Ccb
8
VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-171
ZTX415
TYPICAL CHARACTERISTICS
40
180
1. >4x10 Operations Without Failure
2. 10 Operations To Failure
3. 10 Operations To Failure
160
140
120
30
20
10
V
V
= 250V
= 200V
100
80
3.
2.
60
40
20
0
1.
0
0
20 40 60 80 100 120 140 160 180
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature (°C)
Pulse Width (ns)
Maximum Avalanche Current
v Pulse Width
I
USB
v Temperature
for the specified conditions
100
80
60
40
20
0
220
200
180
160
140
120
100
V
=10V
Risetime of Base
Drive Current = 5mA/ns
175°C
25°C
I
=50mA
-55°C
I
I
=100mA
=200mA
100µA
1mA
10mA
100mA
1A
100p
1n
10n
100n
Collector Current
Collector-Emitter Capacitance (F)
Minimum starting voltage
as a function of capacitance
hFE v IC
180
160
150
175
170
I
=60mA
I
I
=100mA
=200mA
165
160
140
120
C = 620pF
155
150
145
C=620pF
100
1
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage
as a function of drive current
Minimum starting voltage
as a function of temperature
3-172
相关型号：
ZTX415STZ
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZTX449DWP
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.026 INCH, G11, DIE-2
DIODES
ZTX449K
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZTX449M1TC
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明