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ZVN4525Z(1) [ZETEX]

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ZVN4525Z(1)
型号： ZVN4525Z(1)
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

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ZVN4525Z  
250V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(
DESCRIPTION  
This 250V enhancement mode N-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage circuits.  
SOT89  
SOT223 and SOT23-6 versions are also available.  
FEATURES  
•
•
•
•
•
•
•
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
Complementary P-channel Type ZVP4525G  
SOT223 package  
S
D
APPLICATIONS  
D
•
•
•
•
•
Earth Recall and dialling switches  
Electronic hook switches  
High Voltage Power MOSFET Drivers  
Telecom call routers  
G
Top View  
Solid state relays  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm) QUANTITY  
PER REEL  
ZVN4525ZTA  
7
8mm embossed  
1000 units  
DEVICE MARKING  
N52  
ISSUE 1 - MARCH 2001  
1
ZVN4525Z  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDSS  
LIMIT  
250  
UNIT  
V
Drain-Source Voltage  
V
±40  
Gate Source Voltage  
VGS  
Continuous Drain Current (VGS=10V; TA=25°C)(a)  
(VGS=10V; TA=70°C)(a)  
ID  
ID  
240  
192  
mA  
mA  
IDM  
IS  
1.44  
1.1  
A
A
A
Pulsed Drain Current (c)  
Continuous Source Current (Body Diode)  
Pulsed Source Current (Body Diode)  
1.44  
ISM  
PD  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
1.2  
9.6  
W
mW/°C  
-55 to +150  
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
RθJA  
VALUE  
103  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
RθJA  
50  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
NB High Voltage Applications  
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to  
voltage spacing between conductors.  
ISSUE 1 - MARCH 2001  
2
ZVN4525Z  
CHARACTERISTICS  
ISSUE 1 - MARCH 2001  
3
ZVN4525Z  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNI CONDITIONS.  
T
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V(BR)DSS 250  
285  
35  
1
V
ID=1mA, VGS=0V  
IDSS  
IGSS  
VGS(th)  
RDS(on)  
500  
100  
1.8  
nA VDS=250V, VGS=0V  
nA  
V
V
GS=±40V, VDS=0V  
Gate-Source Threshold Voltage  
Static Drain-Source On-State Resistance (1)  
0.8  
0.3  
1.4  
ID=1mA, VDS= VGS  
5.6  
5.9  
6.4  
8.5  
9.0  
9.5  
V
V
V
GS=10V, ID=500mA  
GS=4.5V, ID=360mA  
GS=2.4V, ID=20mA  
Ω
Ω
Ω
Forward Transconductance (3)  
DYNAMIC (3)  
gfs  
475  
S
VDS=10V,ID=0.3A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
72  
11  
3.6  
pF  
pF  
pF  
V
DS=25 V, VGS=0V,  
f=1MHz  
td(on)  
tr  
td(off)  
tf  
1.25  
1.70  
11.40  
3.50  
2.6  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DD =50V, ID=200mA  
RG=6.0Ω, RD=4.4Ω  
(refer to test circuit)  
Turn-Off Delay Time  
Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Qg  
3.65  
0.28  
0.70  
V
DS=25V,VGS=10V,  
Qgs  
Qgd  
0.2  
ID=360mA(refer to  
test circuit)  
0.5  
VSD  
0.97  
V
Tj=25°C, IS=360mA,  
V
GS=0V  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
trr  
186  
34  
260  
48  
ns Tj=25°C, IF=360mA,  
di/dt= 100A/µs  
Qrr  
nC  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - MARCH 2001  
4
ZVN4525Z  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MARCH 2001  
5
ZVN4525Z  
CHARACTERISTICS  
ISSUE 1 - MARCH 2001  
6
ZVN4525Z  
CHARACTERISTICS  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
Switching Time Waveforms  
Switching Time Test Circuit  
ISSUE 1 - MARCH 2001  
7
ZVN4525Z  
PAD LAYOUT DETAILS  
PACKAGE DIMENSIONS  
2.4  
Dim  
Millimeters  
Inches  
Min  
Max  
4.6  
Min  
0.173  
0.150  
0.550  
–
Max  
0.181  
0.167  
0.630  
0.102  
0.018  
0.022  
0.072  
0.112  
0.122  
0.063  
A
B
C
D
F
4.40  
3.75  
1.40  
–
4.25  
1.6  
4.0  
2.6  
0.28  
0.38  
1.5  
0.45  
0.55  
1.80  
2.85  
3.10  
1.60  
0.011  
0.015  
0.060  
0.102  
0.114  
0.055  
1.5  
G
H
K
L
1.2  
1.0  
3.2  
1.2  
2.6  
2.90  
1.4  
SOT89 pattern.  
Minimum Pad Size (dimensions in mm)  
N
A
H
C
K
D B  
G
F
N
L
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
www.zetex.com  
Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - MARCH 2001  
8

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