ZVNL110ASTOA [ZETEX]
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZVNL110ASTOA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVNL110A
ISSUE 2 – MARCH 94
FEATURES
*
*
*
100 Volt VDS
RDS(on)=3Ω
Low threshold voltage
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
100
320
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
mA
A
IDM
6
Ga te S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
700
mW
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S
100
V
ID=1m A, VGS=0V
Ga te-S o u rce Th res h o ld
Vo lta g e
VGS (th )
0.75
1.5
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
100
n A
VGS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
10
500
VDS=100 V, VGS=0
VDS=80 V, VGS=0V, T=125°C
(2)
µA
µA
On -S ta te Dra in Cu rre n t(1)
ID(o n )
750
225
m A
VDS=25 V, VGS=5V
VGS=5V,ID=250m A
S ta tic Drain -S o u rce On -S ta te
Res is ta n ce (1)
RDS (o n )
4.5
3.0
Ω
Ω
VGS=10V, ID=500m A
Fo rw a rd Tra n s co n d u ctan ce
(1)(2)
g fs
m S
VDS=25V,ID=500m A
In p u t Ca p a citan ce (2)
Cis s
75
25
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
Co s s
VDS=25 V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r Ca p acita n ce Crs s
(2)
8
p F
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
7
n s
n s
n s
n s
tr
12
15
13
VDD ≈25V, VGS=10V, ID=1A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
td (o ff)
tf
3-400
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