ZXMN2A02X8 [ZETEX]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | ZXMN2A02X8 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2A02X8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.02⍀ D=7.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
Top View
ZXMN2A02X8TA
ZXMN2A02X8TC
7”
12mm
12mm
1000 units
4000 units
13”
DEVICE MARKING
•
ZXMN
2A02
PROVISIONAL ISSUE A - SEPTEMBER 2001
1
ZXMN2A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
VGS
LIMIT
20
UNIT
Drain-Source Voltage
V
V
A
Gate Source Voltage
12
Continuous Drain Current VGS=10V; TA=25°C (b)
ID
7.6
6.1
6
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
IDM
IS
27
3.1
27
A
A
A
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
ISM
PD
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
70
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
PROVISIONAL ISSUE A - SEPTEMBER 2001
2
ZXMN2A02X8
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated).
A
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS 20
IDSS
V
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VGS=Ϯ12V, VDS=0V
ID=250µA, VDS= VGS
1
µA
nA
V
IGSS
100
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
0.7
Static Drain-Source On-State Resistance
(1)
0.02
0.04
V
V
GS=4.5V, ID=11A
GS=2.5V, ID=8.4A
Ω
Ω
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
27
S
VDS=10V,ID=11A
Input Capacitance
Ciss
Coss
Crss
2050
300
pF
pF
pF
V
DS=15 V, VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
f=1MHz
183
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
6.9
ns
ns
ns
ns
nC
nC
nC
12.2
32.5
11
VDD =10V, ID=5.5A
RG=6.0Ω, VGS=5V
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
18.6
4.1
V
DS=10V,VGS=4.5V,
Qgs
Qgd
ID=5.5A
5.1
VSD
0.8
0.95
V
TJ=25°C, IS=11A,
V
GS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
trr
19.3
9.1
ns
TJ=25°C, IF=5.5A,
di/dt= 100A/µs
Qrr
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - SEPTEMBER 2001
3
ZXMN2A02X8
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
MIN
8
7
2
6
3
5
4
MIN
MAX
MAX
0.043
0.006
0.016
0.009
0.122
BSC
A
A1
B
C
D
e
1.10
0.15
0.40
0.23
3.10
BSC
3.10
BSC
0.70
6°
1
0.05
0.25
0.13
2.90
0.65
2.90
4.90
0.40
0°
0.002
0.010
0.005
0.114
0.0256
0.114
0.193
0.016
0°
e X 6
θ°
L
B
C
E
0.122
BSC
H
L
0.028
6°
°
PAD LAYOUT DETAILS
© Zetex plc 2001
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
Suite 315
700 Veterans Memorial Highway
Hauppauge NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong, Hong Kong
China
Telephone: (852) 26100 611
Fax: (852) 24250 494
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services
concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE A - SEPTEMBER 2001
4
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