ZXMN6A07F [ZETEX]
60V N-CHANNEL ENHANCEMENT MODE MOSFET; 60V N沟道增强型MOSFET
| 型号： | ZXMN6A07F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：1030K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A07F
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
=60V; R
=0.4 I =1A
DS(ON) D
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makesthemidealforhighefficiency, lowvoltage, powermanagement applications.
FEATURES
SOT23
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A07FTA
ZXMN6A07FTC
7”
8mm
8mm
3000 units
13”
10000 units
DEVICE MARKING
•
7N6
Top View
ISSUE 1 - MARCH 2002
1
ZXMN6A07F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
V
V
A
DSS
GS
20
Continuous Drain Current V
=10V; T =25°C(b)
I
1.0
0.84
0.93
GS
GS
GS
A
D
V
V
=10V; T =70°C(b)
A
=10V; T =25°C(a)
A
Pulsed Drain Current (c)
I
I
I
4
1
4
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
SM
Power Dissipation at T =25°C (a)
A
P
625
5
mW
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
806
6.4
mW
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
200
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
155
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ISSUE 1 - MARCH 2002
2
ZXMN6A07F
CHARACTERISTICS
ISSUE 1 - MARCH 2002
3
ZXMN6A07F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
60
V
I
=250µA, V
=0V
(BR)DSS
D
GS
=60V, V =0V
I
1
V
V
I
µA
nA
V
DSS
DS
GS
=±20V, V
I
100
3.0
=0V
GSS
GS
DS
= V
Gate-Source Threshold Voltage
V
1.0
=250µA, V
GS(th)
DS
=10V, I =1.8A
GS
D
Static Drain-Source On-State
Resistance (1)
R
0.3
2.3
0.40
0.55
V
V
Ω
Ω
DS(on)
GS
GS
D
=4.5V, I =1.3A
D
Forward Transconductance (3)
DYNAMIC (3)
g
S
V
=15V,I =1.8A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
166
19.5
8.7
pF
pF
pF
iss
V
=40 V, V
=0V,
DS
GS
oss
rss
f=1MHz
t
t
t
t
1.8
1.4
ns
ns
ns
ns
nC
d(on)
r
V
R
=30V, I =1.8A
D
DD
Turn-Off Delay Time
Fall Time
4.9
=6.0Ω, V
=10V
d(off)
f
G
GS
=30V, V =5V,
GS
2.0
Gate Charge
Q
1.65
V
g
DS
I
=1.8A
D
Total Gate Charge
Q
Q
Q
3.2
nC
nC
nC
g
V
=30V,V
=10V,
GS
DS
ID=1.8A
Gate-Source Charge
Gate-Drain Charge
0.67
0.82
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.8
0.95
V
T =25°C, I =0.45A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
t
20.5
21.3
ns
T =25°C, I =1.8A,
J F
rr
di/dt= 100A/µs
Q
nC
rr
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2002
4
ZXMN6A07F
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2002
5
ZXMN6A07F
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2002
6
ZXMN6A07F
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
MILLIMETRES
MILLIMETRES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
A
B
C
D
F
H
K
L
0.37
0.085
M
N
0.95 NOM
10Њ TYP
G
1.90 NOM
© Zetex plc 2002
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Germany
USA
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Telephone: (631) 360 2222
Fax: (631) 360 8222
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2002
7
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