ZXMP3F37N8TA [ZETEX]
30V SO8 P-channel enhancement mode MOSFET; SO8 30V P沟道增强型MOSFET
| 型号： | ZXMP3F37N8TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V SO8 P-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP3F37N8
30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
RDS(on) (Ω)
ID(A)
-30
0.025 @ VGS=-10V
0.041 @ VGS=-4.5V
-10.7
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high
efficiency power management applications.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
SO8 package
Applications
•
•
•
•
DC-DC Converters
Power management functions
Disconnect switches
Motor control
S
S
S
G
D
D
D
D
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMP3F37N8TA
7
12
500
Device marking
ZXMP 3F37
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ZXMP3F37N8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VDSS
Drain-Source voltage
-30
V
VGS
ID
Gate-Source voltage
V
V
±20
(b)
(b)
(a)
(d)
-8.5
-6.8
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
-6.4
@ VGS= -10V; TA=25°C
-10.7
@ VGS= -10V; TL=25°C
(c)
IDM
-39.5
-4.4
A
A
A
Pulsed Drain current
(b)
Continuous Source current (Body diode)
IS
(c)
-39.5
Pulsed Source current (Body diode)
ISM
PD
(a)
1.56
12.5
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(b)
2.8
22.2
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
D
P
D
(d)
4.4
35.4
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
(a)
R
θJA
80
Junction to ambient
(b)
R
θJA
45
Junction to ambient
(d)
R
θJL
28.26
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
RDS(on)
25mm x 25mm
1oz FR4
Limited
10
1
DC
100m
10m
1m
1s
100ms
10ms
Single Pulse
Tamb=25°C
1ms
100µs
10
100m
1
0
20 40 60 80 100 120 140 160
-VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
80
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-30
V
V(BR)DSS
IDSS
ID = -250μA, VGS=0V
DS=-30V, VGS=0V
Zero Gate voltage Drain
current
-1.0
µA
V
IGSS
Gate-Body leakage
100
-2.5
nA
V
VGS=±20V, VDS=0V
ID= -250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
-1.3
RDS(on)
Static Drain-Source
0.025
0.041
Ω
V
GS= -10V, ID= -7.1A
GS= -4.5V, ID= -5.5A
( )
on-state resistance *
V
gfs
Forward
18.6
S
VDS= -15V, ID= -7.1A
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
1678
303
pF
pF
pF
Ciss
Coss
Crss
VDS= -15V, VGS=0V
f=1MHz
Reverse transfer
capacitance
178
(‡) (†)
Switching
Turn-on-delay time
Rise time
3.5
4.9
44
ns
ns
ns
ns
td(on)
tr
td(off)
tf
VDD= -15V, VGS= -10V
ID= -1A
Turn-off delay time
RG ≅ 6.0Ω,
Fall time
28
Gate charge
Total Gate charge
31.6
4.3
nC
nC
nC
Qg
VDS= -15V, VGS= -10V
ID= -7.1A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Qgs
Qgd
6.2
( )
IS= -1.7A,VGS=0V
-0.80
16.2
10
-1.2
V
Diode forward voltage *
VSD
trr
(‡)
ns
nC
Reverse recovery time
IS= -2.2A,di/dt=100A/μs
(‡)
Qrr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMP3F37N8
Typical characteristics
10V
T = 150°C
10V
3.5V
3.5V
4.5V
3V
10
1
3V
10
1
2.5V
2.5V
2V
0.1
0.01
VGS
VGS
T = 25°C
1
0.1
0.1
0.1
1
-VDS Drain-Source Voltage1(0V)
-VDS Drain-Source Voltage1(0V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 7.1A
10
1
VDS = 10V
RDS(on)
T = 150°C
T = 25°C
VGS = VDS
VGS(th)
ID = 250uA
0.1
2
3
-50
0
50
150
Tj Junction Temperatur1e00(°C)
-V Gate-Source Voltage (V)
Typical TGraS nsfer Characteristics
Normalised Curves v Temperature
10
10
1
T = 25°C
VGS
2.5V
T = 150°C
1
3V
T = 25°C
3.5V
0.1
0.1
0.01
4V
10V
Vgs = 0V
0.8
0.01
1E-3
0.2
0.4
0.6
1.0
0.1
1
-ID Drain Current1(0A)
-VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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Typical characteristics
2500
2000
10
9
8
7
6
5
4
3
2
1
0
VGS = 0V
f = 1MHz
ID = 7.1A
CISS
1500
COSS
1000
500
CRSS
VDS = 15V
0
1
10
0
5
10
15
25
30
35
Q - Charge 2(n0C)
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
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Package outline SO8
SO8 Package Information
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
1.27 BSC
0.013
0.020
0.010
8°
0.33
0.19
0°
0.51
0.25
8°
0.008
0°
H
U
h
-
E
0.010
-
0.020
-
0.25
-
0.50
-
L
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
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or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
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Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
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can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
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All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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