ZXT4M322 [ZETEX]

70V PNP LOW SATURATION TRANSISTOR; 70V PNP低饱和晶体管


型号：	ZXT4M322
厂家：	ZETEX SEMICONDUCTORS
描述：	70V PNP LOW SATURATION TRANSISTOR 70V PNP低饱和晶体管晶体晶体管
文件：	总6页 (文件大小：112K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXT4M322

MPPS Miniature Package Pow er Solutions

70V PNP LOW SATURATION TRANSISTOR

SUMMARY

PNP— V

= -70V; R

= 117m ; I = -2.5A

SAT C

CEO

DESCRIPTION

Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline,

this new 4th generation low saturation PNP transistor offers extremely low on state

losses making it ideal for use in DC-DC circuits and various driving and power

management functions.

Additionally users gain several other key benefits:

Perform ance capability equivalent to m uch larger packages

Im proved circuit efficiency & pow er levels

PCB area and device placem ent savings

Low er Package Height (0.9m m nom )

MLP322

Reduced com ponent count

FEATURES

• Low Equivalent On Resistance

• Extrem ely Low Saturation Voltage (-220m V m ax @1A)

• h_FEspecified up to 3A

• I_C=2.5A Continuous Collector Current

• 2m m x 2m m MLP

APPLICATIONS

• DC - DC Converters

• DC - DC Modules

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE

REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXTD4M322TA

ZXTD4M322TC

7”

8m m

3000

13”

10000

Underside View

DEVICE MARKING

• S4

ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322

ABSOLUTE MAXIMUM RATINGS

PARAMETER

S YMBOL

LIMIT

-70

UNIT

Co lle cto r-Ba s e Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

CBO

CEO

EBO

-70

-7.5

-3

Pe a k Pu ls e Cu rre n t

(a )

Co n tin u o u s Co lle cto r Cu rre n t

-2.5

-1000

Ba s e Cu rre n t

m A

(a )

Po w e r Dis s ip a tio n a t TA=25°C

Lin e a r De ra tin g Fa cto r

1.5

m W/ЊC

(b )

Po w e r Dis s ip a tio n a t TA=25°C

Lin e a r De ra tin g Fa cto r

2.45

19.6

m W/ЊC

(d )

Po w e r Dis s ip a tio n a t TA=25°C

Lin e a r De ra tin g Fa cto r

m W/ЊC

(e )

Po w e r Dis s ip a tio n a t TA=25°C

Lin e a r De ra tin g Fa cto r

m W/ЊC

Op e ra tin g & S to ra g e Te m p e ra tu re Ra n g e

J u n ctio n Te m p e ra tu re

T :T

-55 to +150

150

ЊC

s tg

THERMAL RESISTANCE

PARAMETER

S YMBOL

VALUE

UNIT

ЊC/W

(a )

J u n ctio n to Am b ie n t

⍜J A

(b )

J u n ctio n to Am b ie n t

(d )

J u n ctio n to Am b ie n t

125

(e )

J u n ctio n to Am b ie n t

NOTES

(a) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached.

(b) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions m easured at tՅ5 secs w ith all exposed pads

attached.

(c) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.

(d) For a single device surface m ounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.

(e) For a single device surface m ounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.

(f) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base of the device, as shown in

the package dim ensions data. The therm al resistance for a device m ounted on 1.5m m thick FR4 board using m inim um copper of 1oz weight and

1m m wide tracks is Rth= 300°C/W giving a power rating of Ptot=420m W

ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322

TYPICAL CHARACTERISTICS

ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

am b

PARAMETER

S YMBOL

MIN.

-70

TYP. MAX. UNIT CONDITIONS

Co lle cto r-Ba s e Bre a kd o w n Vo lta g e

Co lle cto r-Em itte r Bre a kd o w n Vo lta g e

Em itte r-Ba s e Bre a kd o w n Vo lta g e

Co lle cto r Cu t-Off Cu rre n t

-150

-125

-8.5

I =-100␮A

(BR)CBO

(BR)CEO

(BR)EBO

CBO

-70

I =-10m A*

-7.5

I =-100␮A

-25

=-55V

=-6V

Em itte r Cu t-Off Cu rre n t

EBO

Co lle cto r Em itte r Cu t-Off Cu rre n t

Co lle cto r-Em itte r S a tu ra tio n Vo lta g e

=-55V

CES

-35

-50

m V I =-0.1A, I =-10m A*

C B

CE(s a t)

-135

-140

-175

-200

-220

-260

m V I =-0.5A, I =-20m A*

C B

I =-1A, I =-100m A*

m V

I =-1.5A, I =-200m A*

Ba s e -Em itte r S a tu ra tio n Vo lta g e

Ba s e -Em itte r Tu rn -On Vo lta g e

-0.94 -1.05

-0.78 -1.00

I =-1.5A, I =-200m A*

C B

BE(s a t)

BE(o n )

I =-1.5A, V =-5V*

S ta tic Fo rw a rd Cu rre n t Tra n s fe r Ra tio

300

175

470

450

275

I =-10m A, V =-5V*

C CE

I =-100m A, V =-5V*

I =-1A, V =-5V*

I =-1.5A, V =-5V*

I =-3A, V =-5V*

Tra n s itio n Fre q u e n cy

150

180

MHz I =-50m A, V =-10V

f=100MHz

Ou tp u t Ca p a cita n ce

Tu rn -On Tim e

=-10A, f=1MHz

o b o

=-50V, I =-1A

=I =-50m A

(o n )

(o ff)

B1 B2

Tu rn -Off Tim e

700

*Measured under pulsed conditions. Pulse width=300␮s. Duty cycle Յ 2%

ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322

TYPICAL CHARACTERISTICS

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

I^C/IB=10

25°C

0.5

0.4

0.3

0.2

0.1

0.0

I^C/IB=50

I^C/IB=20

I^C/IB=10

I^C/IB=5

100°C

25°C

-55°C

1m A

10m A

100m A

10A

1m A

10m A

100m A

10A

100

Collector Current

VBE(SAT) vs IC

Collector Current

VCE(SAT) vs IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

V^CE=5V

IC/IB=5

100°C

25°C

-55°C

25°C

450

225

100°C

-55°C

0.2

0.0

1m A

10m A

100m A

10A

1m A

10m A

100m A

Collector Current

hFE(SAT) vs IC

Collector Current

VBE(SAT) vs IC

SINGLE PULSE TEST T^{am b}= 25 deg C

1.0

V^CE=5V

-55°C

25°C

0.8

0.6

0.4

0.2

0.0

D.C.

100m s

100°C

10m s

1m s

100µs

0.1

0.01

0.1

1m A

10m A

100m A

10A

VCE (VOLTS)

Collector Current

Safe Operating Area

VBE(ON) vs IC

ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322

PACKAGE OUTLINE

Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches

PACKAGE DIMENSIONS

Millim etres

Inches

Min Max

0.0315 0.0393

0.00 0.002

Millim etres

Min Max

0.65 REF

2.00 BSC

Inches

Min Max

DIM

Min

0.80

0.00

0.65

0.15

0.18

0.17

Max

1.00

0.05

0.75

0.25

0.28

0.30

0.0255 REF

0.0787

0.0255 0.0295

0.0059 0.0098

0.0070 0.0110

0.0066 0.0118

0.0787 BSC

0.79

0.99

0.68

0.45

0.031

0.039

0.48

0.20

0.0188 0.0267

0.0078 0.0177

0.005 REF

0.125 MAX.

0.075 BSC

2.00 BSC

0.0029 BSC

1.22

0.56

1.42

0.76

0.0480 0.0559

0.0220 0.0299

⍜

0Њ

12Њ

0Њ

12Њ

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ISSUE 1 - J UNE 2003

S E M IC O N D U C T O R S

ZXT4M322 [ZETEX]

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