ZXTD4591AM832TC [ZETEX]

COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR; 互补双40V高性能晶体管


型号：	ZXTD4591AM832TC
厂家：	ZETEX SEMICONDUCTORS
描述：	COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR 互补双40V高性能晶体管晶体晶体管开关
文件：	总8页 (文件大小：351K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXTD4591AM832

MPPS™ Miniature Package Power Solutions

COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR

SUMMARY

NPN Transistor

= 40V; R

= 195m ;

= 350m ;

= 2.5A

= -2A

CEO

SAT

PNP Transistor

= -40V; R

SAT

CEO

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),

these high performance NPN / PNP combination dual transistors offer lower on

state losses making them ideal for use in DC-DC circuits and various driving

and power-management functions.

Users will also gain several other key benefits:

Performance capability equivalent to much larger packages

3mm x 2mm Dual Die MLP

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (0.9mm nom)

Reduced component count

FEATURES

•

Low Saturation Voltage (500mV max @1A)

specified up to 2A

= 2.5A Continuous Collector Current

•

3mm x 2mm MLP

APPLICATIONS

•

DC - DC Converters

Power switches

PINOUT

Motor control

LED Backlighting circuits

ORDERING INFORMATION

DEVICE

REE

TAPE

QUANTITY

WIDTH PER REEL

ZXTD4591AM832TA

؅؅

8mm

3000

3mm x 2mm Dual MLP

underside view

ZXTD4591AM832TC 13

10000

DEVICE MARKING

91A

ISSUE 1 - JUNE 2002

ZXTD4591AM832

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

NPN

PNP

-40

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

CBO

CEO

EBO

-3

Continuous Collector Current (a)(f)

Continuous Collector Current (b)(f)

Base Current

-1.5

-2.0

2.5

300

Power Dissipation at TA=25°C (a)(f)

Linear Derating Factor

1.5

mW/°C

Power Dissipation at TA=25°C (b)(f)

Linear Derating Factor

2.45

19.6

mW/°C

Power Dissipation at TA=25°C (c)(f)

Linear Derating Factor

mW/°C

Power Dissipation at TA=25°C (d)(f)

Linear Derating Factor

1.13

mW/°C

Power Dissipation at TA=25°C (d)(g)

Linear Derating Factor

1.7

13.6

mW/°C

Power Dissipation at TA=25°C (e)(g)

Linear Derating Factor

mW/°C

Storage Temperature Range

Junction Temperature

-55 to +150

150

°C

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

83.3

UNIT

°C/W

Junction to Ambient (a)(f)

Junction to Ambient (b)(f)

Junction to Ambient (c)(f)

Junction to Ambient (d)(f)

Junction to Ambient (d)(g)

Junction to Ambient (e)(g)

Notes

θJA

125

111

73.5

41.7

(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For a dual device with one active die.

(g) For dual device with 2 active die running at equal power.

(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.

(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm

wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

ISSUE 1 - JUNE 2002

ZXTD4591AM832

TYPICAL CHARACTERISTICS

AWAITING GRAPH

NPN Safe Operating Area

PNP Safe Operating Area

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T_amb=25°C

2oz Cu

Note (a)(f)

Note (e)(g)

2oz Cu

Note (a)(f)

D=0.5

D=0.2

1oz Cu

Note (d)(g)

Single Pulse

D=0.05

D=0.1

1oz Cu

Note (d)(f)

100µ 1m 10m 100m

10 100 1k

100 125 150

Pulse Width (s)

Temperature (°C)

Derating Curve

Transient Thermal Impedance

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

225

200

175

150

125

100

2oz copper

Note (g)

T_amb=25°C

_jmax=150°C

Continuous

1oz copper

Note (f)

1oz copper

Note (g)

2oz copper

Note (f)

2oz copper

Note (f)

1oz copper

Note (g)

1oz copper

Note (f)

2oz copper

Note (g)

0.1

100

0.1

100

BoardCuArea(sqcm)

Thermal Resistance v Board Area

Power Dissipation v Board Area

ISSUE 1 - JUNE 2002

ZXTD4591AM832

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

I =100␮A

Collector-Base Breakdown

Voltage

(BR)CBO

Collector-Emitter Breakdown

Voltage

I =10mA*

(BR)CEO

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I =100␮A

(BR)EBO

CBO

100

=30V

=4V

Emitter Cut-Off Current

EBO

Collector Emitter Cut-Off Current

=30V

CES

Collector-Emitter Saturation

Voltage

300

500

I =0.5A, I =50mA*

C B

CE(sat)

I =1A, I =100mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

1.1

1.0

I =1A, I =100mA*

C B

BE(sat)

BE(on)

I =1A, V =5V*

Static Forward Current Transfer

Ratio

300

200

I =1mA, V =5V*

C CE

900

I =0.5A, V =5V*

C CE

I =1A, V =5V*

I =2A, V =5V*

Transition Frequency

150

MHz I =-50mA, V =-10V

f=100MHz

Output Capacitance

=-10V, f=1MHz

obo

*Measured under pulsed conditions.

ISSUE 1 - JUNE 2002

ZXTD4591AM832

ISSUE 1 - JUNE 2002

ZXTD4591AM832

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

I =-100␮A

Collector-Base Breakdown

Voltage

-40

(BR)CBO

Collector-Emitter Breakdown

Voltage

-40

-5

I =-10mA*

(BR)CEO

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

I =-100␮A

(BR)EBO

CBO

-100

=-30V

=-4V

Emitter Cut-Off Current

EBO

Collector Emitter Cut-Off Current

=-30V

CES

Collector-Emitter Saturation

Voltage

-200

-350

-500

I =-0.1A, I =-1mA*

C B

CE(sat)

I =-0.5A, I =-20mA*

I =-1A, I =-100mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

-1.1

-1.0

I =-1A, I =-50mA*

C B

BE(sat)

BE(on)

I =-1A, V =-5V*

Static Forward Current Transfer

Ratio

300

250

160

I =-1mA, V =-5V*

C CE

800

I =-0.1A, V =-5V*

C CE

I =-0.5A, V =-5V*

I =-1A, V =-5V*

I =-2A, V =-5V*

Transition Frequency

150

MHz I =-50mA, V =-10V

f=100MHz

Output Capacitance

=-10V, f=1MHz

obo

*Measured under pulsed conditions.

ISSUE 1 - JUNE 2002

ZXTD4591AM832

ISSUE 1 - JUNE 2002

ZXTD4591AM832

MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)

CONTROLLING DIMENSIONS IN MILLIMETRES

APPROX. CONVERTED DIMENSIONS IN INCHES

MLP832 PACKAGE DIMENSIONS

MILLIMETRES

INCHES

MILLIMETRES

MIN. MAX.

0.65 REF

2.00 BSC

INCHES

MIN. MAX.

DIM

MIN.

0.80

0.00

0.65

0.15

0.24

0.17

MAX.

1.00

0.05

0.75

0.25

0.34

0.30

MIN.

MAX.

0.039

0.031

0.00

0.0256 BSC

0.0787 BSC

0.002

0.0255

0.006

0.009

0.0066

0.0295

0.0098

0.013

0.43

0.63

0.36

0.017

0.0249

0.014

0.16

0.20

0.006

0.0078

0.00

0.45

0.0157

0.005

0.0118

0.125

3.00 BSC

0.118 BSC

0.075 BSC

0.0029 BSC

0.82

1.01

1.02

1.21

0.032

0.040

⍜

0Њ

12Њ

0Њ

12Њ

0.0397

0.0476

Europe

Americas

Asia Pacific

Zetex (Asia) Ltd

Zetex plc

Zetex GmbH

Zetex Inc

Fields New Road

Chadderton

Oldham, OL9 8NP

United Kingdom

Telephone (44) 161 622 4422

Fax: (44) 161 622 4420

uksales@zetex.com

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3701-04 Metroplaza, Tower 1

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Kwai Fong

Germany

USA

Hong Kong

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Telephone: (631) 360 2222

Fax: (631) 360 8222

usa.sales@zetex.com

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

These offices are supported by agents and distributors in major countries world-wide.

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced

for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company

reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product information, log on to www.zetex.com

ISSUE 1 - JUNE 2002

ZXTD4591AM832TC [ZETEX]

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