ZXTP2025FTC [ZETEX]
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23, 3 PIN;
| 型号： | ZXTP2025FTC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23, 3 PIN 晶体 晶体管 功率双极晶体管 开关 光电二极管 |
| 文件： | 总6页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP2025F
50V, SOT23, PNP medium power transistor
Summary
V
> -50V
(BR)CEO
I
= -5A
C(cont)
R
= 30m⍀ typical
CE(sat)
V
< - 60mV @ -1A
CE(sat)
P = 1.2W
D
Complementary part number: ZXTN2031F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
•
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
High gain
50V forward blocking voltage
Applications
•
•
•
•
•
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
High side switches
Pinout - top view
DC-DC converters
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP2025FTA
7
8
3,000
Device marking
312
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
1
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ZXTP2025F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
-50
-50
-7.0
-10
-5
V
CBO
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
V
V
A
A
A
I
I
I
CM
(c)
C
B
Continuous collector current
Base current
-1.2
(a)
P
P
P
1.0
8.0
W
D
D
D
Power dissipation @ T =25°C
Linear derating factor
A
mW/°C
(b)
(c)
1.2
9.6
W
Power dissipation @ T =25°C
A
mW/°C
Linear derating factor
1.56
12.5
W
Power dissipation @ T =25°C
A
mW/°C
Linear derating factor
Operating and storage temperature
T :T
-55 to +150
°C
j
stg
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
Rθ
125
°C/W
JA
Junction to ambient
(b)
Rθ
104
80
°C/W
°C/W
JA
Junction to ambient
(c)
Rθ
JA
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b)Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP2025F
Characteristics
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTP2025F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
V
V
V
-50
-50
-7.0
100
V
I =-100µA
C
(BR)CBO
(BR)CEO
(BR)EBO
(a)
Collector-emitter breakdown
voltage
70
V
I =-10mA
C
Emitter-base breakdown
voltage
8.5
V
I =-100µA
E
Collector-emitter cut-off
current
I
-20
nA
V
V
=-40V,
= 1V
CEV
CE
BE
Collector-base cut-off current
Emitter-base cut-off current
I
I
-20
-10
nA
nA
V
V
=-40V
CBO
CB
EB
=-6V
EBO
(a)
Static forward current transfer
ratio
H
180
200
70
380
350
120
30
FE
I =-10mA, V =-2V
C
CE
(a)
560
I =-500mA, V =-2V
C
CE
(a)
Ic=-5A, V =-2V
CE
(a)
12
Ic=-10A, V =-2V
CE
(a)
Collector-emitter saturation
voltage
V
-11
-40
-20
-60
mV
mV
mV
mV
CE(sat)
I =-100mA, I =-10mA
C
B
(a)
I =-1A, I =-100mA
C
B
(a)
-150 -230
-150 -200
I =-2A, I =-40mA
C
B
(a)
I =-5A, I =-500mA
C
B
(a)
Base-emitter saturation
voltage
V
V
-0.81 -0.88
-0.95 -1.05
V
V
BE(sat)
BE(on)
I =-2A, I =-40mA
C B
(a)
I =-5A, I =-500mA
C
B
(a)
Base-emitter turn-on voltage
Transition frequency
-0.82 -0.92
190
V
I =-5A, V =-2V
C
CE
f
MHz Ic=-500mA, V =-10V,
T
CE
f=50MHz
Output capacitance
Delay time
C
42
14
pF
ns
ns
ns
ns
V
=-10V, f=1MHz
obo
CB
t
t
t
t
(d)
Rise time
23
V
=-12V, I =-2.5A,
C
(r)
CC
Storage time
Fall time
240
30
I =I =-125mA
B1 B2
(stg)
(f)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle Յ2%.
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP2025F
Typical characteristics
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
ZXTP2025F
Packaging details - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
2.67
1.20
-
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
-
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
Max.
0.51
0.10
2.50
0.64
Max.
0.013
0.0004
0.083
0.018
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.33
0.01
2.10
0.45
0.37
0.085
0.015
0.0034
M
N
-
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Zetex GmbH
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Zetex Semiconductors plc
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Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 3 - January 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
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