ZXTS1000E6TA [ZETEX]
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE; 12V PNP硅低饱和开关晶体管和肖特基二极管
| 型号： | ZXTS1000E6TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE |
| 文件： | 总6页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: VCEO=-12V, IC= -1.25A
Schottky Diode: VR=40V; IC= 0.5A
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
SOT23-6
FEATURES
•
•
•
Low Saturation Transistor
High Gain - 300 minimum
Low VF, fast switching Schottky
APPLICATIONS
•
Mobile telecomms, PCMCIA & SCSI
•
DC-DC Conversion
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTS1000E6TA
ZXTS1000E6TC
7
8mm embossed
8mm embossed
3000 units
10000 units
13
Top View
DEVICE MARKING
1000
ISSUE 1 - NOVEMBER 2000
1
ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Schottky Diode
VCBO
VCEO
VEBO
IC
-12
-12
V
V
V
A
-5
-1.25
Continuous Reverse Voltage
Forward Current
VR
IF
40
V
A
0.5
IFSM
6.75
3
A
A
Non Repetitive Forward Current t≤100µs
t≤ 10ms
Package
Power Dissipation at Tamb=25°C
single die “on”
both die “on”
PD
0.725
0.885
W
W
Storage Temperature Range
Junction Temperature
Tstg
Tj
-55 to +150
125
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
single die “on”
both die “on”
RθJA
RθJA
138
113
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
ISSUE 1 - NOVEMBER 2000
2
ZXTS1000E6
TRANSISTOR TYPICAL CHARACTERISTICS
0.4
0.4
0.3
0.2
0.1
0
+25°C
IC/IB=50
0.3
0.2
0.1
0
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
600
400
200
0
1.0
0.8
0.6
0.4
0.2
0
IC/IB=50
VCE=2V
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10
1
1.0
0.8
0.6
0.4
0.2
0
DC
1s
100ms
10ms
1ms
-55°C
+25°C
+100°C
+150°C
100m
10m
100µs
100m
1
10
100
1m
10m
100m
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 1 - NOVEMBER 2000
3
ZXTS1000E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V(BR)CBO -12
V
V
IC= -100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12
IC= -10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5
V
IE= -100µA
VCB=-10V
VEB=-4V
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
IEBO
-10
-10
-10
nA
nA
nA
Collector Emitter Cut-Off Current ICES
VCES
=-10V
Collector-Emitter Saturation
Voltage
VCE(sat)
-25
-40
mV
mV
mV
mV
mV
IC= -0.1A, IB= -10mA*
IC= -0.25A, IB=-10 mA*
IC= -0.5A, IB=-10 mA*
IC= -1A, IB= -50mA*
-55
-100
-175
-215
-240
-110
-160
-185
IC= -1.25A, IB= -100mA*
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
hFE
-990
-850
-1100
-1000
mV
mV
IC= -1.25A, IB= -100mA*
IC= -1.25A, VCE= 2V*
Static Forward Current Transfer
Ratio
300
300
200
125
75
490
450
340
250
140
80
IC= -10mA, VCE=-2V*
IC= -0.1A, VCE= -2V*
IC= -0.5A, VCE= -2V*
IC= -1.25A, VCE=-2V*
IC= -2A, VCE= -2V*
IC= -3A, VCE= -2V*
30
Transition Frequency
fT
220
MHz
IC= -50mA, VCE=-10 V
f= 100MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
15
pF
ns
ns
VCB= -10V, f=1MHz
50
VCC= -10V, IC=-1A
IB1=IB2=-100mA
Turn-Off Time
135
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)R
40
60
V
IR=200µA
Forward Voltage
VF
270
300
370
425
550
640
810
300
mV
mV
mV
mV
mV
mV
mV
IF=50mA*
350
460
550
670
780
1050
IF=100mA*
IF=250mA*
IF=500mA*
IF=750mA*
IF=1000mA*
IF=1500mA*
Reverse Current
IR
15
20
10
40
VR=30V
µA
pF
ns
Diode Capacitance
Reverse Recovery Time
CD
trr
f=1MHz,VR=30V
switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions.
ISSUE 1 - NOVEMBER 2000
4
ZXTS1000E6
DIODE TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2000
5
ZXTS1000E6
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
b
e
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
DIM Millimetres
Inches
Min
Min
Max
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
Max
A
0.90
0.35
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
A1
A2
b
0.00
0
0.90
0.035
0.014
0.0035
0.110
0.102
0.059
0.004
0.35
C
0.09
D
2.80
E
2.60
E1
L
1.50
0.10
e
0.95 REF
1.90 REF
0°
0.037 REF
0.074 REF
0°
e1
L
10°
10°
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - NOVEMBER 2000
8
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