EGC20JH [ZOWIE]

High Efficient Rectifier; 高效整流器
EGC20JH
型号: EGC20JH
厂家: ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述:

High Efficient Rectifier
高效整流器

文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZOWIE  
High Efficient Rectifier  
(200V~1000V / 2.0A)  
EGC20DH THRU EGC20MH  
FEATURES  
OUTLINE DIMENSIONS  
*
*
*
*
*
*
*
*
Halogen-free type  
Case : 2010  
Unit : mm  
Lead free product, compliance to RoHs  
GPRC (Glass passivated rectifier chip) inside  
Glass passivated cavity-free junction  
Lead less chip form, no lead damage  
Low power loss , High efficiency  
High current capability  
4.5 ± 0.1  
0.05  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
0.95 ± 0.2  
0.95 ± 0.2  
APPLICATION  
*
*
General purpose rectification  
Surge absorption  
JEDEC : SMA  
DO-214AC  
MECHANICAL DATA  
Case : Packed with FRP substrate and epoxy underfilled  
Terminals : Pure Tin plated (Lead-Free),  
solderable per MIL-STD-750, Method 2026.  
Polarity : Cathode Band, Laser marking  
Weight : 0.02 gram  
MARKING  
Series code  
Cathode mark  
EGC  
20D  
.
Halogen-free type  
Amps class  
Voltage class  
PACKING  
Voltage class: D = 200V, G = 400V  
J = 600V, K = 800V, M = 1000V  
*
*
*
3,000 pieces per 7" (178mm ± 2mm) reel  
4 reels per box  
6 boxes per carton  
Absolute Maximum Ratings (Ta = 25 oC)  
ITEM  
EGC20  
JH  
Symbol  
Conditions  
Unit  
DH  
GH  
KH  
MH  
Repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
200  
400  
600  
800  
1000  
V
A
2.0  
Peak forward surge current  
Reverse recovery time  
IFSM  
Trr  
8.3ms single half sine-wave  
50  
A
I
F = 0.5A, IR = 1.0A, Irr = 0.25A  
50  
75  
nS  
oC  
Operating storage temperature Range  
Tj,TSTG  
-65 to +175  
ITEM  
Symbol  
Conditions  
Type  
Min.  
Typ.  
Max.  
Unit  
-
-
-
-
-
0.95  
1.05  
1.45  
1.45  
1.45  
1.00  
1.25  
1.70  
1.70  
1.70  
EGC20DH  
EGC20GH  
EGC20JH  
EGC20KH  
EGC20MH  
Forward voltage  
VF  
IF = 2.0A  
V
Repetitive peak reverse current  
Junction capacitance  
IRRM  
Cj  
VR = Max. VRRM , Ta = 25 oC  
VR = 4V, f = 1.0 MHz  
-
-
0.10  
15  
5
-
uA  
pF  
Rth(JA)  
Rth(JL)  
Junction to ambient (NOTE)  
Junction to lead (NOTE)  
-
-
76  
11  
-
-
oC/W  
Thermal resistance  
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.  
REV. 0  
2009/10  
ZOWIE  
EGC20DH THUR EGC20MH  
(200V~1000V / 2.0 A)  
FIG.1 - FORWARD CURRENT DERATING CURVE  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
2.0  
1.5  
70  
8.3ms SINGLE HALF SINE-WAVE  
RESISTIVE OR  
INDUCTIVE LOAD  
60  
50  
40  
1.0  
30  
20  
0.5  
0
10  
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
LEAD TEMPERATURE, o  
C
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
PER BRIDGE ELEMENT  
100  
10.0  
1.0  
10.00  
TJ=150oC  
TJ=125oC  
1.00  
0.10  
0.01  
TJ=25oC  
0.10  
0.01  
TJ=25oC  
EGC20DH  
EGC20GH  
EGC20JH~EGC20MH  
0
20  
40  
60  
80  
100  
120  
140  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8 2.0  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
200  
100  
TJ = 25oC  
60  
40  
20  
10  
6
4
2
1
.1  
.2  
.4  
1.0  
2
4
10  
20  
40  
100  
REVERSE VOLTAGE, VOLTS  
REV. 0  
2009/10  

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