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MMBT5401 [ZOWIE]

HIGH VOLTAGE TRANSISTOR PNP SILICON; 高压晶体管PNP硅
MMBT5401
型号： MMBT5401
厂家： ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述：

HIGH VOLTAGE TRANSISTOR PNP SILICON
高压晶体管PNP硅

晶体 晶体管 光电二极管 高压
文件： 总4页 (文件大小：86K)
中文：  中文翻译
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Zowie Technology Corporation  
High Voltage Transistor  
PNP Silicon  
COLLECTOR  
3
3
BASE  
1
1
MMBT5401  
2
2
EMITTER  
SOT-23  
MAXIMUM RATINGS  
Value  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
-150  
-160  
-5.0  
Vdc  
Emitter-Base Voltage  
Vdc  
Collector Current-Continuous  
-500  
mAdc  
THERMAL CHARACTERISTICS  
Max.  
Symbol  
PD  
Unit  
Characteristic  
Total Device Dissipation FR-5 Board(1) TA=25oC  
225  
1.8  
mW  
Derate above 25oC  
mW / oC  
Thermal Resistance Junction to Ambient  
R
JA  
556  
oC / W  
Total Device Dissipation Alumina Substrate,(2) TA=25oC  
300  
2.4  
mW  
Derate above 25oC  
PD  
mW / oC  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
JA  
417  
oC / W  
oC  
TJ,TSTG  
-55 to +150  
DEVICE MARKING  
MMBT5401=2L  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Symbol  
Max.  
Min.  
Unit  
Characteristic  
OFF CHARACTERISTICS  
Collector-Emitter Breakdowe Voltage  
( IC = 1.0mAdc, IB = 0 )  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICES  
-150  
-160  
-5.0  
-
-
-
Vdc  
Vdc  
Vdc  
Collector-Base Breakdowe Voltage  
( IC = -100 uAdc, IE = 0 )  
Emitter-Base Breakdowe Voltage  
( IE = -10 uAdc, IC = 0 )  
Collector Cutoff Current  
( VCE= -120 Vdc, IE = 0 )  
( VCE= -120 Vdc, IE = 0, TA = 100 oC )  
-
-
-50  
-50  
nAdc  
uAdc  
x
x
(1) FR-5=1.0 0.75 0.062in.  
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
ON CHARACTERISTICS  
DC Current Gain  
( IC= -1.0 mAdc, VCE= -5.0 Vdc )  
( IC= -10 mAdc, VCE= -5.0 Vdc )  
( IC= -50 mAdc, VCE= -5.0 Vdc )  
50  
60  
50  
-
240  
-
HFE  
-
Collector-Emitter Saturation Voltage  
( IC= -10 mAdc, IB= -1.0 mAdc )  
( IC= -50 mAdc, IB= -5.0 mAdc )  
VCE(sat)  
VBE(sat)  
Vdc  
Vdc  
-
-
-0.2  
-0.5  
Base-Emitter Saturation Voltage  
( IC= -10 mAdc, IB= -1.0 mAdc )  
( IC= -50 mAdc, IB= -5.0 mAdc )  
-
-
-1.0  
-1.0  
SMALL-SIGNAL CHARACTERISTIC  
Current-Gain-Bandwidth Product  
fT  
100  
300  
6.0  
MHZ  
pF  
-
( IC= -10 mAdc, VCE= -10 Vdc, f=100 MHZ )  
Output Capacitance  
Ccb  
hfe  
NF  
-
40  
-
( VCB= -10 Vdc, IE=0, f=1.0 MHZ )  
Small-Signal Current Gain  
200  
8.0  
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 MHZ )  
Noise Figure  
dB  
( VCE= -5.0 Vdc, IC= -200 uAdc, RS= 10 ohms, f=1.0 kHZ )  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT5401  
200  
150  
TJ = 125oC  
100  
TJ = 25oC  
70  
50  
TJ = 55oC  
30  
20  
VCE = -1.0 V  
VCE = -5.0 V  
0.1  
0.2  
0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
20  
30  
50  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
1.0  
0.9  
TJ= 25oC  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
IC = 1.0mA  
IC = 10mA  
IC = 30mA  
IC = 100mA  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
I , BASE CURRENT ( mA )  
B
Figure 2. Collector Saturation Region  
103  
102  
IC = ICES  
VCE = 30 V  
101  
100  
TJ = 125oC  
TJ = 75oC  
10-1  
10-2  
REVERSE  
TJ = 25oC  
FORWARD  
10-3  
0.3  
0.2  
0.1  
0
0.1  
0.2 0.3  
0.4  
0.5  
0.6 0.7  
V , BASE - EMITTER VOLTAGE (VOLTS)  
BE  
Figure 18. Temperature Coefficients  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT5401  
1.0  
2.5  
2.0  
TJ= 25oC  
TJ= -55oC to 135oC  
0.9  
0.8  
1.5  
1.0  
0.5  
0.7  
0.6  
VBE(SAT) @ IC/IB = 10  
VC for VCE(sat)  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0
-0.5  
-1.0  
-1.5  
VCE(SAT) @ IC/IB = 10  
VB for VBE(sat)  
0.2 0.3 0.5  
-2.0  
-2.5  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30 50  
100  
0.1  
1.0  
2.0 3.0 5.0  
10  
20 30 50 100  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 4. " On " Voltages  
Figure 5. Temperature Coefficients  
100  
70  
TJ= 25oC  
V
V
CC  
BB  
50  
-30 V  
+ 8.8V  
100  
10.2V  
30  
20  
3.0 k  
C
R
C
ibo  
V
in  
Vout  
10  
7.0  
5.0  
0.25 uF  
R
B
10 uS  
INPUT PULSE  
5.1 k  
100  
C
obo  
t , t  
10 nS  
V
in  
1N914  
3.0  
2.0  
r
f
DUTY CYCLE = 1.0%  
1.0  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20  
VALUES SHOWN ARE FOR IC @ 10 mA  
V , REVERSE VOLTAGE ( VOLTS )  
R
Figure 6. Switching Time Test Circuit  
Figure 7. Capacitances  
1000  
700  
2000  
IC/IB = 10  
TJ= 25oC  
tf @ VCC = 120 V  
500  
1000  
700  
IC/IB = 10  
TJ= 25oC  
300  
200  
tr @ VCC = 120 V  
500  
tf @ VCC = 30 V  
300  
200  
tr @ VCC = 30 V  
100  
70  
tf @ VCC = 120 V  
50  
100  
70  
30  
20  
td @ VBE(off) = 1.0 V  
VCC = 120 V  
50  
30  
20  
10  
0.2 0.3 0.5  
1.0 2.0 3.0 5.0  
10  
20 30 50 100 200  
0.2 0.3 0.5  
1.0 2.0 3.0 5.0  
10  
20 30 50 100 200  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 8. Turn - On Time  
Figure 9. Turn - Off Time  
REV. : 0  
Zowie Technology Corporation  

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