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MMBT5551 [ZOWIE]

HIGH VOLTAGE TRANSISTOR NPN SILICON; 高压晶体管NPN硅
MMBT5551
型号： MMBT5551
厂家： ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述：

HIGH VOLTAGE TRANSISTOR NPN SILICON
高压晶体管NPN硅

晶体 晶体管 光电二极管 高压 放大器
文件： 总4页 (文件大小：87K)
中文：  中文翻译
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Zowie Technology Corporation  
High Voltage Transistor  
NPN Silicon  
COLLECTOR  
3
3
BASE  
1
1
MMBT5551  
2
2
EMITTER  
SOT-23  
MAXIMUM RATINGS  
Value  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
140  
160  
6.0  
Vdc  
Emitter-Base Voltage  
Vdc  
Collector Current-Continuous  
600  
mAdc  
THERMAL CHARACTERISTICS  
Max.  
Symbol  
PD  
Unit  
Characteristic  
Total Device Dissipation FR-5 Board(1) TA=25oC  
225  
1.8  
mW  
Derate above 25oC  
mW / oC  
Thermal Resistance Junction to Ambient  
R
JA  
556  
oC / W  
Total Device Dissipation Alumina Substrate,(2) TA=25oC  
300  
2.4  
mW  
Derate above 25oC  
PD  
mW / oC  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
JA  
417  
oC / W  
oC  
TJ,TSTG  
-55 to +150  
DEVICE MARKING  
MMBT5551=G1  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Symbol  
Max.  
Min.  
160  
Unit  
Vdc  
Characteristic  
OFF CHARACTERISTICS  
(3)  
Collector-Emitter Breakdowe Voltage  
( IC=1.0mAdc, IB=0 )  
V(BR)CEO  
-
Collector-Base Breakdowe Voltage  
( IC=100 uAdc, IE=0 )  
V(BR)CBO  
V(BR)EBO  
180  
6.0  
-
-
Vdc  
Vdc  
Emitter-Base Breakdowe Voltage  
( IE=10 uAdc, IC=0 )  
Base Cutoff Current  
( VCE=120 Vdc, IE=0 )  
-
-
50  
50  
nAdc  
uAdc  
ICBO  
IEBO  
( VCE=120 Vdc, IE=0, TA = 100oC )  
Collector Cutoff Current  
( VEB=4.0 Vdc, IC=0 )  
-
50  
nAdc  
x
x
(1) FR-5=1.0 0.75 0.062in.  
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.  
(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
ON CHARACTERISTICS  
DC Current Gain  
( IC= 1.0 mAdc, VCE= 5.0 Vdc )  
( IC= 10 mAdc, VCE= 5.0 Vdc )  
( IC= 50 mAdc, VCE= 5.0 Vdc )  
80  
80  
30  
-
250  
-
HFE  
-
Collector-Emitter Saturation Voltage  
( IC= 10 mAdc, IB= 1.0 mAdc )  
( IC= 50 mAdc, IB= 5.0 mAdc )  
VCE(sat)  
VBE(sat)  
Vdc  
Vdc  
-
-
0.15  
0.20  
Base-Emitter Saturation Voltage  
( IC= 10 mAdc, IB= 1.0 mAdc )  
( IC= 50 mAdc, IB= 5.0 mAdc )  
-
-
1.0  
1.0  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT5551  
500  
VCE=1.0 V  
VCE=5.0 V  
300  
200  
TJ = +125oC  
TJ = 25oC  
100  
TJ = -55oC  
50  
30  
20  
10  
7.0  
5.0  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
3.0  
2.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
I , COLLECTOR CURRENT ( mA )  
C
Figure 1. DC Current Gain  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
100 mA  
IC = 1.0 mA  
30 mA  
10 mA  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
I , BASE CURRENT ( mA )  
B
Figure 2. Collector Saturation Region  
101  
1.0  
TJ= 25oC  
VCE = 30 V  
100  
0.8  
TJ = 125oC  
TJ = 75oC  
10-1  
10-2  
VBE(SAT) @ IC/IB = 10  
IC = ICES  
0.6  
0.4  
0.2  
0
10-3  
10-4  
REVERSE  
TJ = 25oC  
FORWARD  
V
CE(SAT) @ I  
C
/I  
B
= 10  
10-5  
0.4  
0.3  
0.2  
0.1  
0
0.1 0.2  
0.3  
0.4  
0.5 0.6  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30 50  
100  
V , BASE - EMITTER VOLTAGE (VOLTS)  
BE  
I , COLLECTOR CURRENT ( mA )  
C
Figure 3. Collector Cut - Off Region  
Figure 4. " On " Voltages  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT5551  
2.5  
2.0  
V
CC  
V
BB  
30 V  
1.5  
- 8.8V  
100  
10.2V  
1.0  
0.5  
0
3.0 k  
R
C
V
in  
VC for VCE(sat)  
Vout  
0.25 uF  
R
B
10 uS  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
TJ= -55oC to +135oC  
INPUT PULSE  
5.1 k  
100  
1N914  
t , t  
10 nS  
V
in  
VB for VBE(sat)  
r
f
DUTY CYCLE = 1.0%  
0.1  
0.2 0.3 0.5 1.0  
2.0 3.0 5.0  
10  
20 30 50 100  
I , COLLECTOR CURRENT ( mA )  
C
VALUES SHOWN ARE FOR IC @ 10 mA  
Figure 5. Temperature Coefficients  
Figure 6. Switching Time Test Circuit  
100  
1000  
500  
TJ= 25oC  
IC/IB = 10  
TJ= 25oC  
70  
50  
30  
20  
300  
200  
tr @ VCC = 120 V  
tr @ VCC = 30 V  
C
ibo  
td @ VEB(off) = 1.0 V  
VCC = 120 V  
10  
100  
50  
7.0  
5.0  
C
obo  
3.0  
2.0  
30  
20  
10  
1.0  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20  
20 30 50 100 200  
0.2 0.3 0.5 1.0  
2.0 3.0 5.0  
10  
V , REVERSE VOLTAGE ( VOLTS )  
R
V , REVERSE VOLTAGE ( VOLTS )  
R
Figure 7. Capacitances  
Figure 8. Turn-On Time  
5000  
IC/IB = 10  
TJ= 25oC  
3000  
2000  
tf @ VCC = 120 V  
tf @ VCC = 30 V  
1000  
500  
ts @ VCC = 120 V  
300  
200  
100  
50  
0.2 0.3 0.5 1.0 2.0 3.0 5.0  
10  
20 30 50 100 200  
I , COLLECTOR CURRENT ( mA )  
C
Figure 9. Turn - Off Time  
REV. : 0  
Zowie Technology Corporation  

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