RBP321015-NASC2
更新时间:2025-01-23 11:17:26
品牌:CTMICRO
描述:Part?Number : RBP321015-NASC2; Package : 1204; Size?L*W*H(mm) : 3.2*1.0*1.5; Fire : Side; Color?Co
RBP321015-NASC2 概述
Part?Number : RBP321015-NASC2; Package : 1204; Size?L*W*H(mm) : 3.2*1.0*1.5; Fire : Side; Color?Co
RBP321015-NASC2 数据手册
通过下载RBP321015-NASC2数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Features
Description
The RBP321015-NASC2 is a double LED housed in
a miniature SMD package. The device has a
dominant wavelength of 622 nm and 470 nm LED.
Side view 1204 package
Viewing Angle = 650
Compatible with infrared and vapor phase reflow
solder process
High reliability
Dual dominant wavelength
(R=622nm , B=470nm)
RoHS compliance
Applications
Optical indicator.
Switch and Symbol Display.
Package Outline
Schematic
R+
B+
Common
Cathode
CT Micro
Rev 2
Proprietary & Confidential
Page 1
Jan, 2021
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
Continuous Forward Current
Ratings
Units
Notes
R
B
R
B
25
IF
mA
25
60
IFP
Peak Forward Current
mA
60
VR
Topr
Tstg
Tsol
Reverse Voltage
5
-40 ~ +85
-40 ~ +100
260
V
Operating Temperature
Storage Temperature
0C
0C
0C
Soldering Temperature
Power Dissipation at(or below) 25℃ Free Air
Temperature
R
B
60
PD
mW
95
Electro-Optical CharacteristicsTA = 25°C (unless otherwise specified)
Optical Characteristics (Red)
Symbol
Parameters
Luminous Intensity
Peak Wavelength
Test Conditions
IF=20mA
Min
Typ
-
Max
Units Notes
Iv
57
-
140
mcd
nm
λp
IF=20mA
632
622
65
-
-
-
λD
Dominant Wavelength
Angle of Half Intensity
IF=20mA
-
nm
θ1/2
IF=20mA
-
deg
Electrical Characteristics
Symbol
Parameters
Forward Voltage
Reverse Current
Test Conditions
IF=20mA
Min
1.7
-
Typ
Max
2.4
1
Units Notes
VF
IR
-
-
V
VR=5V
µA
CT Micro
Rev 2
Proprietary & Confidential
Page 2
Jan, 2021
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Optical Characteristics (Blue)
Symbol
Iv
Parameters
Luminous Intensity
Peak Wavelength
Test Conditions
IF=20mA
Min
112
-
Typ
-
Max
285
-
Units Notes
mcd
nm
λp
IF=20mA
466
-
λD
Dominant Wavelength
Angle of Half Intensity
IF=20mA
460
-
475
-
nm
θ1/2
IF=20mA
deg
65
Electrical Characteristics
Symbol
Parameters
Forward Voltage
Reverse Current
Test Conditions
IF=20mA
Min
2.6
-
Typ
Max
3.3
1
Units Notes
VF
IR
-
-
V
VR=5V
µA
Notes:
The products are sensitive to staic electricity and must be carefully taken when hadling products.
CT Micro
Rev 2
Proprietary & Confidential
Page 3
Jan, 2021
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Rev 2
Jan, 2021
Page 4
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Rev 2
Jan, 2021
Page 5
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Package Dimension All dimensions are in mm, unless otherwise stated
Note: Tolerance unless mentioned is ±0.1mm.
Recommended Soldering Mask All dimensions are in mm, unless otherwise stated
Note: Tolerance unless mentioned is ±0.1mm.
Ordering Information
Description
Quantity
Part Number
RBP321015-NASC2
Tape & Reel
2000 pcs
CT Micro
Proprietary & Confidential
Rev 2
Jan, 2021
Page 6
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Reel Dimension All dimensions are in mm, unless otherwise stated
Tape Dimension All dimensions are in mm, unless otherwise stated
Note: Tolerance unless mentioned is ±0.1mm.
CT Micro
Rev 2
Proprietary & Confidential
Page 7
Jan, 2021
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Label Form Specification
CPN : Customer Part Number
Part no: CTM Production Number
Serial no: Production Number
Lot no: Lot number
Q’ty: Packing Quantity
Date Code: Manufacture Date
IV : Bin Code of Luminous Intensity
WD : Bin Code of Dominant Wavelength
VF : Bin Code of Forward Voltage
MADE IN CHINA: Production Place
Storage Condition
1. Do not open moisture proof bag before the products are ready to use.
2. The moisture barrier bag should be stored at 30°C and 90%R.H. max. before opening.
Shelf life of non-opened bag is 12 months after the bag sealing date.
3. After opening the moisture barrier bag floor life is 1 year at 30°C/60%RH. max. Unused LEDs
should be resealed into moisture barrier bag. (Refer to J-STD-020 Standard)
4. If the moisture absorbent material has faded away or the LEDs have exceeded the storage time,
baking treatment should be performed using the J-STD-033 Standard conditions.
CT Micro
Rev 2
Proprietary & Confidential
Page 8
Jan, 2021
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
Proprietary & Confidential
Rev 2
Jan, 2021
Page 9
RBP321015-NASC2
Dual Wavelength SMD Type Emitter
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labelling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
Rev 2
Proprietary & Confidential
Page 10
Jan, 2021
RBP321015-NASC2 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
RBPC10-00-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC, 4 PIN | 获取价格 | |
RBPC10-00W-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC-W, 4 PIN | 获取价格 | |
RBPC10-01-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC, 4 PIN | 获取价格 | |
RBPC10-01W-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC-W, 4 PIN | 获取价格 | |
RBPC10-02-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC, 4 PIN | 获取价格 | |
RBPC10-02W-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC-W, 4 PIN | 获取价格 | |
RBPC10-04-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC, 4 PIN | 获取价格 | |
RBPC10-04W-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC-W, 4 PIN | 获取价格 | |
RBPC10-06-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC, 4 PIN | 获取价格 | |
RBPC10-06W-G | SENSITRON | Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, LEAD FREE, PLASTIC, RKBPC-W, 4 PIN | 获取价格 |
RBP321015-NASC2 相关文章
- 2025-01-22
- 20
- 2025-01-22
- 23
- 2025-01-22
- 24
- 2025-01-22
- 22