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MTB3K0P06KS3

更新时间：2025-06-30 11:16:32

品牌：CYSTEKEC

描述：Parts Number : MTB3K0P06KS3; Package : SOT-323; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;

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MTB3K0P06KS3 概述

Parts Number : MTB3K0P06KS3; Package : SOT-323; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;

MTB3K0P06KS3 数据手册

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MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Product Summary

Features

BV_DSS

-60

3.3

-0.24

• Low Gate Charge

R_DS(ON)typ. @ V_GS=-10V, I_D=-0.2A

R_DS(ON)typ. @ V_GS=-4.5V, I_D=-0.1A

I_D@ V_GS=-10V, T_A=25°C

• Fast Switching Characteristic

• Pb-free lead plating and halogen-free

• ESD protected gate, typical 3kV (HBM)

SOT-323

Marking

Device Code &

BTF

Date Code

YM: Date Code Marking

Y: Year Code, the last digit of Christian year

M: Month Code

1: Jan 2: Feb 3: Mar 4: Apr 5: May 6: Jun

7: Jul 8: Aug 9: Sep A: Oct B: Nov C: Dec

Ordering Information

Device

Package

Shipping

MTB3K0P06KS3-0-T1-G

SOT-323

3000pcs / Tape & Reel

0: Product rank, zero for no rank products.

T1: Packing spec, T1 : 3000pcs / tape & reel, 7” reel

G: Environment friendly grade: S for RoHS compliant products, G for RoHS

compliant and green compound products.

Absolute Maximum Ratings (T_A=25C)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Value

-60

±20

Unit

V_GS

Continuous Drain Current @ V_GS=-10V, T_A=25C

Continuous Drain Current @ V_GS=-10V, T_A=70C

Pulsed Drain Current

Continuous Body Diode Forward Current @ T_A=25C

Pulsed Body Diode Forward Current @ T_A=25C

-0.24

-0.19

-0.96

-0.24

-0.96

0.49

I_D

I_DM

I_S

I_SM

T_A=25C

Total Power Dissipation

T_A=70C

P_D

0.31

Operating Junction and Storage Temperature Range

Steady State Thermal Resistance, Junction-to-Ambient

T_J, T_stg

R_θJA

-55~+150

257

C

C/W

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1/8

Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Electrical Characteristics (T_A=25C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

G_FS

I_GSS

I_DSS

-60

-1

-2.5

±10

-1

4.4

V_GS=0V, I_D=-250μA

0.34

V_DS=V_GS, I_D=-250μA

V_DS=-10V, I_D=-0.1A

V_GS=±16V, V_DS=0V

V_DS=-48V, V_GS=0V

V_GS=-10V, I_D=-0.2A

V_GS=-4.5V, I_D=-0.1A

μA

R_DS(ON)

3.3

Dynamic

C_iss

C_oss

C_rss

Q_g

Q_gs

V_DS=-30V, V_GS=0V, f=1MHz

V_DS=-30V, I_D=-0.2A, V_GS=-4.5V

V_DS=-30V, I_D=-0.2A, V_GS=-10V

*c,d

0.7

1.5

0.4

0.1

Q_gd

t_d(ON)*c,d

*c,d

t_d(OFF)*c,d

*c,d

V_DS=-30V, I_D=-0.2A, V_GS=-10V, R_GS=6Ω

t_f

Source-Drain Diode

V_SD

t_rr

-0.86

-1.2

I_S=-0.2A, V_GS=0V

I_F=-0.5A, di/dt=100A/μs

Q_rr

Note:

*a. The value of R_θJAis measured with the device mounted on 1in² FR-4 board with 2oz copper, in a still air environment with T_A=25°C. The

power dissipation P_Dis based on R_θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user’s specific board design.

*b. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and low duty cycles to

keep initial T_J=25°C.

*c. Pulse Test : Pulse Width300μs, Duty Cycle2%.

*d. Independent of operating temperature.

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Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Typical Characteristics

Breakdown Voltage vs Junction Temperature

Typical Output Characteristics

1.2

0.8

0.6

0.4

0.2

-4V

-10V,-9V,-8V,-7V,

-6V,-5V,-4.5V

1.1

VGS=-3.5V

0.9

0.8

ID=-250μA

VGS=0V

-75 -50 -25

25 50 75 100 125 150 175

-VDS, Drain-Source Voltage(V)

TJ, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Body Diode Current vs Source-Drain Voltage

1.2

4.5

0.8

0.6

0.4

0.2

TJ=25°C

VGS=-4.5V

VGS=-10V

TJ=150°C

3.5

2.5

0.1

0.2

0.3

0.4

0.5

0.1

0.2

0.3

0.4

0.5

-ID, Drain Current(A)

-IS, Body Diode Current(A)

Drain-Source On-State Resistance vs Junction Temperature

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

2.5

VGS=-10V, ID=-0.2A

RDS(ON)@TJ=25°C: 3Ω typ.

1.5

ID=-0.2A

0.5

-75 -50 -25

25 50 75 100 125 150 175

-VGS, Gate-Source Voltage(V)

TJ, Junction Temperature(°C)

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3/8

Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Typical Characteristics

Capacitance vs Drain-to-Source Voltage

Threshold Voltage vs Junction Temperature

1.4

1.2

100

Ciss

ID=-1mA

Coss

Crss

0.8

0.6

0.4

ID=-250μA

-75 -50 -25

25 50 75 100 125 150 175

-VDS, Drain-Source Voltage(V)

TJ, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

0.1

VDS=-30V

VDS=-10V

TA=25°C

Pulsed

ID=-0.2A

0.01

0.5

1.5

0.001

0.01

0.1

-ID, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

0.3

0.25

0.2

100μs

1ms

RDSON

Limited

0.15

0.1

10ms

0.1

100ms

TA=25°C, TJ=150°C

VGS=-10V, RθJA=257°C/W

Single Pulse

VGS=-10V, RθJA=257°C/W

0.01

0.05

0.001

0.01

100

125

150

175

0.1

100

1000

TJ, Junction Temperature(°C)

-VDS, Drain-Source Voltage(V)

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4/8

Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Typical Characteristics

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C

TA=25°C

RθJA=257°C/W

0.0001

0.001

0.01

0.1

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=257°C/W

0.1

0.05

0.02

0.01

0.001

Single Pulse

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t1, Square Wave Pulse Duration(s)

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Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

SOT-323 Dimension

3-Lead SOT-323 Plastic Surface Mount Package

CYS Package Code: S3

Recommended Soldering Footprint

Inches

Min.

Millimeters

Inches

Min.

Millimeters

DIM

Max.

0.043

0.004

0.039

0.016

0.006

0.087

0.096

Min.

Max.

1.100

0.100

1.000

0.400

0.150

2.200

2.450

Max.

0.053

TYP.

0.055

0.018

REF.

8°

Min.

Max.

1.350

TYP.

1.400

0.460

REF.

8°

0.035

0.000

0.035

0.008

0.003

0.079

0.085

0.900

0.000

0.900

0.200

0.080

2.000

2.150

0.045

0.026

0.047

0.010

0.021

0°

1.150

0.650

1.200

0.260

0.525

0°

Note:

•

Controlling dimension: millimeters.

Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

•

Lead: pure tin plated.

Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

•

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

CYStek reserves the right to make changes to its products without notice.

CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

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6/8

Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Reel Dimension

Carrier Tape Dimension

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7/8

Ver. A1

2023.10.13

MTB3K0P06KS3

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.

Recommended wave soldering condition

Product

Pb-free devices

Peak Temperature

260 +0/-5 C

Soldering Time

5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature

Sn-Pb eutectic Assembly

Pb-free Assembly

Average ramp-up rate

3C/second max.

(T_Smax to T_P)

Preheat

−Temperature Min (T_Smin)

−Temperature Max (T_Smax)

−Time (t_Smin to t_Smax)

100C

150C

200C

60-120 seconds

60-180 seconds

Time maintained above:

−Temperature (T_L)

−Time (t_L)

183C

217C

60-150 seconds

Peak Temperature (T_P)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

10-30 seconds

20-40 seconds

temperature (t_P)

Ramp down rate

6C/second max.

Time 25 C to peak temperature

6 minutes max.

8 minutes max.

Note:

•

All temperatures refer to topside of the package, measured on the package body surface.

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8/8

Ver. A1

2023.10.13

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