MTB3K0P06KSN3
更新时间：2025-04-28 11:17:32
品牌：CYSTEKEC
描述：Parts Number : MTB3K0P06KSN3; Package : SOT-23; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.3; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;
概述
数据手册MTB3K0P06KSN3 概述
Parts Number : MTB3K0P06KSN3; Package : SOT-23; Channel : Single P; BVDSS(V) : -60; ID(A) : -0.3; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1;
MTB3K0P06KSN3 数据手册
通过下载MTB3K0P06KSN3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 1/9
CYStek Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTB3K0P06KSN3
Features
BVDSS
-60V
• Low On Resistance
ID@VGS=-10V, TA=25°C
-0.3A
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate, typical 3kV (HBM)
3Ω
RDS(ON) typ. @VGS=-10V, ID=-0.2A
RDS(ON) typ. @VGS=-4.5V, ID=-0.1A
3.3Ω
Equivalent Circuit
Outline
MTB3K0P06KSN3
SOT-23
D
S
G
Ordering Information
Device
Package
SOT-23
Shipping
MTB3K0P06KSN3-0-T1-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 2/9
CYStek Electronics Corp.
Absolute Maximum Ratings (TA=25C)
Parameter
Symbol
VDS
Limits
-60
Unit
Drain-Source Voltage
V
±20
Gate-Source Voltage
VGS
-0.30
-0.24
-1.1
Continuous Drain Current @ VGS=-10V, TA=25C
Continuous Drain Current @ VGS=-10V, TA=70C
Pulsed Drain Current
*a
*a
*b
*a
*a
*a
ID
A
IDM
IS
-0.6
Continuous Body Diode Forward Current @ TA=25C
TA=25C
Total Power Dissipation
TA=70C
0.7
PD
W
0.5
Operating Junction and Storage Temperature Range
TJ, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Steady State Unit
180
C/W
RθJA
Thermal Resistance, Junction-to-ambient
*a
Note:
*a. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user’s specific board design.
*b. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
low duty cycles to keep initial TJ=25°C.
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 3/9
CYStek Electronics Corp.
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
-60
-
-
-2.5
-
VGS=0V, ID=-250μA
V
S
-1
-
-
0.34
-
VDS=VGS, ID=-250μA
VDS=-10V, ID=-0.1A
±
±
10
VGS= 16V, VDS=0V
IGSS
-
μA
IDSS
-
-
-1
4.4
5
VDS=-48V, VGS=0V
VGS=-10V, ID=-0.2A
VGS=-4.5V, ID=-0.1A
-
3
Ω
pF
nC
RDS(ON)
-
3.3
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
35
9
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
VDS=-30V, VGS=0V, f=1MHz
VDS=-30V, ID=-0.2A, VGS=-4.5V
VDS=-30V, ID=-0.2A, VGS=-10V
7
Qg
0.7
1.5
0.4
0.1
6.3
15
27
21
*1, 2
Qg
*1, 2
*1, 2
*1, 2
*1, 2
*1, 2
Qgs
Qgd
td(ON)
tr
VDS=-30V, ID=-0.2A, VGS=-10V, RGS=6Ω
ns
td(OFF) *1, 2
tf
*1, 2
Source-Drain Diode
VSD
trr
-
-
-
-0.86
11
-1.2
V
IS=-0.2A, VGS=0V
*1
-
-
ns
μC
IF=-0.5A, dIF/dt=100A/μs
Qrr
4
Note:
*1. Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2. Independent of operating temperature
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 4/9
CYStek Electronics Corp.
Typical Characteristics
Breakdown Voltage vs Junction Temperature
Typical Output Characteristics
1.2
1.1
1
1
-10V,-9V,-8V,-7V,
-6V,-5V,-4.5V
0.8
-4V
0.6
0.4
0.2
0
-3.5V
0.9
0.8
ID=-250μA
VGS=0V
VGS=-3V
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Body Diode Current vs Source-Drain Voltage
5
1.2
4.5
4
1
0.8
0.6
0.4
0.2
TJ=25°C
VGS=-4.5V
VGS=-10V
TJ=150°C
3.5
3
2.5
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
-ID, Drain Current(A)
-IS, Body Diode Current(A)
Drain-Source On-State Resistance vs Junction Temperature
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
8
2.5
VGS=-10V, ID=-0.2A
RDS(ON)@TJ=25°C: 3Ω typ.
7
6
5
4
3
2
2
1.5
1
ID=-0.2A
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
TJ, Junction Temperature(°C)
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 5/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Temperature
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
100
10
1
Ciss
ID=-1mA
Coss
Crss
0.8
0.6
0.4
ID=-250μA
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
60
-VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
1
10
8
6
4
2
0
0.1
VDS=-30V
ID=-0.2A
VDS=-10V
TA=25°C
Pulsed
0.01
0
0.5
1
1.5
2
0.001
0.01
0.1
1
-ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
0.4
0.3
0.2
0.1
0
10
1
100μs
RDSON
Limited
1ms
0.1
10ms
100ms
1s
DC
TA=25°C, TJ=150°C
VGS=-10V, RθJA=180°C/W
Single Pulse
VGS=-10V, RθJA=180°C/W
0.01
0.001
0.01
25
50
75
100
125
150
175
0.1
1
10
100
1000
TJ, Junction Temperature(°C)
-VDS, Drain-Source Voltage(V)
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 6/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Ambient
80
60
40
20
0
TJ(MAX)=150°C
TA=25°C
RθJA=180°C/W
0.0001
0.001
0.01
0.1
1
10
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=180°C/W
0.1
0.1
0.05
0.01
0.02, 0.01, Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended soldering footprint
：
Unit mm
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 7/9
CYStek Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 8/9
CYStek Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
240 +0/-5 C
260 +0/-5 C
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB3K0P06KSN3
CYStek Product Specification
Spec. No. : CA58N3
Issued Date : 2022.11.14
Revised Date : 2023.10.13
Page No. : 9/9
CYStek Electronics Corp.
SOT-23 Dimension
Marking:
D
Date Code
3
Device Code
BTFK
2
1
S
G
Style: Pin 1.Gate 2.Source 3.Drain
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
A1
A2
b
c
D
0.036
0.000
0.035
0.012
0.004
0.110
0.047
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.910
0.010
0.900
0.300
0.090
2.800
1.200
1.120
0.100
1.020
0.500
0.150
3.000
1.400
E1
e
e1
L
L1
θ
0.089
0.037 TYP.
0.071
0.022 REF.
0.012
0.100
2.250
0.950 TYP.
1.800
0.550 REF.
0.300
2.550
0.079
2.000
0.020
8 ﾟ
0.500
8 ﾟ
0 ﾟ
0 ﾟ
E
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB3K0P06KSN3
CYStek Product Specification
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| MTB40N06E3 | CYSTEKEC | Parts Number : MTB40N06E3; Package : TO-220; Channel : Single N; BVDSS(V) : 60; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 3; RDS(ON) @ 10V(mΩ) : 45(35); RDS(ON) @ 4.5V(mΩ) : 50(40); Ciss typ.(pF) : 882; Crss typ.(pF) : 37; Qg typ (nC) : 12; Qgd typ.(nC) : 3.8; | 获取价格 |
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