2N2329
更新时间:2025-01-16 18:33:32
品牌:DIGITRON
描述:Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39
2N2329 概述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39 可控硅整流器
2N2329 规格参数
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.62 | Is Samacsys: | N |
Base Number Matches: | 1 |
2N2329 数据手册
通过下载2N2329数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2N2322(A)-2N2329(A)
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
2N2322
2N2323
2N2324
2N2325
2N2326
2N2327
2N2328
Ratings
Symbol
Units
2N2322A
2N2323A
2N2324A
2N2325A
2N2326A
2N2327A
2N2328A
2N2329
400
Peak repetitive forward voltage
Peak repetitive reverse voltage
Non-repetitive peak reverse voltage
VDRM
VRRM
VRSM
25
25
40
50
50
75
100
100
150
150
150
225
200
200
300
250
250
350
300
300
400
V
V
V
400
500
DC on-state current
80°C ambient
85°C case
IT(AV)
300
1.6
mA
A
One cycle surge on-state current
Repetitive peak on-state current
Gate power dissipation
Gate power dissipation
Peak gate current
ITSM
ITM
15
30
A
A
PGM
PGM(AV)
IGM
0.1
0.01
100
6
W
W
mA
V
Reverse gate voltage
VGR
Reverse gate current
IGR
3
mA
°C
°C
Operating temperature
Storage junction temperature
Top
-65 to +125
-65 to +150
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Off-state current
Symbol
IDRM
Min
Typ
0.1
0.1
Max
10
Unit
Test Condition
-
-
µA
µA
VDRM = rating, RGK = 1K (2K for “A” types)
VRRM = rating, RGK = 1K (2K for “A” types)
Reverse current
IRRM
10
Gate trigger current
“A” types
Ω
VD = 6V, RL = 100
IGT
-
-
2
20
µA
V
Non “A” types
50
200
Gate trigger voltage
“A” types
Ω
VD = 6V, RGK = 2K, RL = 100
VGT
0.35
0.35
0.52
0.55
0.60
0.80
Non “A” types
VD = 6V, RGK = 1K, RL = 100Ω
ITM = 4A (pulse test)
On-state voltage
Holding current
VTM
IH
-
-
-
-
-
-
2.0
0.3
1
2.2
2.0
200
-
V
mA
µA
µs
VD = 6V, RGK = 1K (2K for “A” types)
VGR = 6V
Reverse gate current
Delay time
IGR
td
0.6
0.4
20
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IT = 1A, IR = 1A, RGK = 1K
Rise time
tr
-
µs
Circuit commutated turn off time
tq
-
µs
ELECTRICAL CHARACTERISTICS @ 125°C
Characteristics Symbol
Off-state current
Min
Typ
Max
Unit
µA
µA
V
Test Condition
IDRM
IRRM
VGT
-
-
1
1
100
100
-
VDRM = rating, RGK = 1K (2K for “A” types)
VRRM = rating, RGK = 1K (2K for “A” types)
VD = rated VD, RGK = 1K (2K for “A” types)
Reverse current
Gate trigger voltage
0.1
0.3
Holding current
“A” types
IH
0.1
-
-
-
-
mA
VD = 6V, RGK = 2K
VD = 6V, RGK = 1K
Non “A” types
0.15
Off-state voltage – critical rate of rise
“A” types
dv/dt
0.7
1.8
-
-
-
-
V/µs
VDRM = rating, RGK = 2K
VDRM = rating, RGK = 1K
Non “A” types
Rev. 20130116
2N2322(A)-2N2329(A)
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS @ -65°C
Characteristics
Off-state current
Symbol
IDRM
IRRM
Min
Typ
0.05
0.05
Max
5.0
Unit
µA
Test Condition
-
-
VDRM = rating, RGK = 1K (2K for “A” types)
VRRM = rating, RGK = 1K (2K for “A” types)
Reverse current
5.0
µA
Gate trigger current
“A” types
IGT
-
-
50
75
µA
VD = 6V, RL = 100Ω
Non “A” types
100
350
Gate trigger voltage
Ω
Ω
Ω
“A” types
-
-
-
0.7
-
0.8
0.9
1.0
VD = 6V, RGK = 2K, RL = 100
VD = 6V, RGK = 2K, RL = 100
VD = 6V, RGK = 1K, RL = 100
VGT
V
Non “A” types
0.75
Holding current
IH
-
-
3.0
mA
VD = 6V, RGK = 1K (2K for “A” types)
MECHANICAL CHARACTERISTICS
Case:
TO-39
Marking:
Pin out:
Body painted, alpha-numeric
See below
Rev. 20130116
2N2322(A)-2N2329(A)
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130116
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2N2329A | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 400; Peak Repetitive | 获取价格 |
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2N2329E3 | MICROSEMI | Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
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2N2329LEADFREE | CENTRAL | Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3 | 获取价格 |
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2N2329SE3 | MICROSEMI | Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
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2N2330 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 | 获取价格 |
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