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2N3898

更新时间：2025-01-17 11:03:53

品牌：DIGITRON

描述：Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 400; Peak Repetitive

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2N3898 概述

Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 400; Peak Repetitive

2N3898 数据手册

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2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward or reverse blocking voltage ⁽¹⁾

(T_J= -40 to 100°C, ½ sine wave, 50-400 Hz, gate open)

2N3870, 2N3896, 2N6171

2N3871, 2N3897, 2N6172

2N3872, 2N3898, 2N6173

100

200

400

600

V_RRMor V_DRM

Volts

2N3873, 2N3899, 2N6174

Peak non-repetitive forward or reverse blocking voltage

(t ≤ 5ms)

2N3870, 2N3896, 2N6171

2N3871, 2N3897, 2N6172

2N3872, 2N3898, 2N6173

2N3873, 2N3899, 2N6174

150

330

660

700

V_RSMor V_DSM

Volts

Average on-state current ⁽²⁾

(T_C= -40 to 65°C)

(T_C= 85°C)

I_T(AV)

I_TSM

I²t

Amps

A²s

Peak non-repetitive surge current

(one cycle, 60Hz) (T_C= 65°C)

350

510

Circuit fusing

(T_C= -40 to 100°C)

(t = 1 to 8.3 ms)

Peak gate power

P_GM

P_G(AV)

I_GM

V_GM

T_J

Watts

Watt

Amps

Volts

°C

Average gate power

0.5

Peak forward gate current

Peak gate voltage

Operating junction temperature range

Storage temperature range

Stud torque

-40 to 100

-40 to 150

T_stg

°C

In. lb.

Thermal resistance, junction to case

2N3870 – 2N3873, 2N3896-2N3899

2N6171-2N6174

R_ӨJC

0.9

°C/W

Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be

tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

Note 2: Isolated stud devices must be derated an additional 10 percent.

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open, T_J= 100°C)

2N3870, 2N3896, 2N6171

2N3871, 2N3897, 2N6172

2N3872, 2N3898, 2N6173

2.0

2.5

3.0

4.0

I_DRM, I_RRM

2N3873, 2N3899, 2N6174

Rated V_DRMor V_RRM, gate open, T_J= 25°C)

All devices

µA

Peak on-state voltage

V_TM

Volts

(I_TM= 69A peak)

1.5

1.85

Gate trigger current (continuous dc)

V_D= 12V, R_L= 24ohms)

T_C= -40°C

T_C= 25°C

I_GT

Gate trigger voltage (continuous dc)

V_GT

Volts

V_D= 12V, R_L= 24ohms)

T_C= -40°C

T_C= 25°C

0.9

0.69

1.6

Holding current (gate open)

V_D= 12V, I_TM= 200mA)

I_H

µs

T_C= -40°C

T_C= 25°C

5.2

Gate controlled turn-on time (t_d+t_r)

(I_TM= 41Adc, V_D= rated V_DRM, I_GT= 40mAdc,

Rise time ≤ 0.05µs, pulse width = 10µs)

t_gt

1.5

Circuit commutated turn-off time

(I_TM= 10A, I_R= 10A)

t_q

µs

(I_TM= 10A, I_R= 10A, T_C= 100°C)

Forward voltage application rate

dv/dt

V/µs

(T_C= 100°C, V_D= rated V_DRM

)

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

MECHANICAL CHARACTERISTICS

2N3870-2N3873

Case

DIGI PF2

Marking

Pin out

Alpha-numeric

See below

DIGI PF2

Inches

Millimeters

Min

Max

0.505

0.475

0.380

Min

Max

12.830

12.060

9.650

0.501

0.465

0.330

0.100

0.035

0.148

0.080

12.730

11.810

8.390

2.540

0.890

3.750

2.040

0.085

0.174

0.097

0.800

0.510

0.160

2.160

4.410

2.460

20.320

12.950

4.060

0.065

1.650

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

MECHANICAL CHARACTERISTICS

2N3896-2N3899

Case

TO-48

Marking

Polarity

Alpha-numeric

Cathode

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

MECHANICAL CHARACTERISTICS

2N6171-2N6174

Case

TO-48 ISO

Marking

Polarity

Alpha-numeric

Cathode

TO-48 ISO

Inches

Millimeters

Min

Max

14.200

12.830

32.510

4.060

6.730

11.560

8.890

6.990

2.160

3.810

0.551

0.501

0.559

0.505

1.280

0.160

0.265

0.455

0.350

0.275

0.085

0.150

14.000

12.730

0.420

0.300

0.255

0.055

0.135

10.670

7.620

6.480

1.400

3.430

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

Rev. 20190625

2N3870-2N3873,

2N3896-2N3899,

2N6171-2N6174

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIERS

Rev. 20190625

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