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2N4171

更新时间：2025-07-10 10:56:35

品牌：DIGITRON

描述：Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 300; Peak Repetitive

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概述
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2N4171 概述

Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 300; Peak Repetitive

2N4171 数据手册

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2N4167-2N4174

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage

2N4167

2N4168

2N4169

2N4170

2N4172

2N4174

100

200

400

600

V_DRM, V_RRM

Forward current RMS

I_T(RMS)

I_TSM

Peak forward surge current

(one cycle, 60Hz, T_J= -40 to +100°C)

100

Circuit fusing (t = 8.3ms)

Peak gate power

I²t

P_GM

P_G(AV)

I_GM

A²s

Average gate power

Peak gate current

0.5

Peak gate voltage

V_GM

T_J

Operating temperature range

Storage temperature range

Stud torque

-40 to +100

-40 to +150

°C

T_stg

°C

In. lb.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ.

Max

Unit

Thermal resistance, junction to case

R_ӨJC

1.5

2.5

°C/W

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_C= 25°C

I_DRM, I_RRM

µA

T_C= 100°C

Gate trigger current (continuous dc)

(V_D= 7V, R_L= 100Ω)

(V_D= 7V, R_L= 100Ω, T_C= -40°C)

I_GT

Gate trigger voltage (continuous dc)

(V_D= 7V, R_L= 100Ω)

(V_D= 7V, R_L= 100Ω, T_C= -40°C)

(V_D= 7V, R_L= 100Ω, T_C= 100°C)

0.75

1.5

2.5

V_GT

0.2

Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)

(I_TM= 15.7A)

V_TM

1.4

Rev. 20130108

2N4167-2N4174

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Holding current

I_H

(V_D= 7V, gate open)

(V_D= 7V, gate open, T_C= -40°C)

Turn-on time (t_d+t_r)

(I_G= 20mA, IF = 5A, V_D= rated V_DRM

t_on

µs

)

Turn-off time

t_off

(I_F= 5A, I_R= 5A)

(I_F= 5A, I_R= 5A, T_C= 100°C, V_D= rated V_DRM

(dv/dt = 30V/µs)

)

Forward voltage application rate (exponential)

dv/dt

V/µs

(Gate open, T_C= 100°C, V_D= rated V_DRM

)

MECHANICAL CHARACTERISTICS

Case:

TO-64

Marking:

Pin out:

Alpha-Numeric

See below

Rev. 20130108

2N4167-2N4174

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

Rev. 20130108

2N4167-2N4174

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

Rev. 20130108

2N4171 相关器件

型号	制造商	描述	价格	文档
2N4171LEADFREE	CENTRAL	Silicon Controlled Rectifier, 8A I(T)RMS, 300V V(RRM), 1 Element, TO-64	获取价格
2N4172	CENTRAL	SCRs	获取价格
2N4172	MOTOROLA	SILICON CONTROLLED RECTIFIERS	获取价格
2N4172	NJSEMI	SCR, V(DRM) = 400V TO 499.9V	获取价格
2N4172	DIGITRON	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64	获取价格
2N4172LEADFREE	CENTRAL	Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(RRM), 1 Element, TO-64	获取价格
2N4173	CENTRAL	SCRs	获取价格
2N4173	NJSEMI	SCR, V(DRM) = 500V TO 599.9V	获取价格
2N4173	DIGITRON	Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 500; Peak Repetitive	获取价格
2N4173	MOTOROLA	8A, 500V, SCR, CASE 86-01, 2 PIN	获取价格