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2N6162

更新时间：2025-06-29 11:03:59

品牌：DIGITRON

描述：Descriptive : Triac; Max On-State Current RMS : 30; Max Peak Non Repetitive Surge Current : 250; M

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概述
规格参数
数据手册

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2N6162 概述

Descriptive : Triac; Max On-State Current RMS : 30; Max Peak Non Repetitive Surge Current : 250; M TRIAC

2N6162 规格参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.8
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	TRIAC	Base Number Matches：	1

2N6162 数据手册

通过下载2N6162数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage

(T_J= -65 to +125°C)

(1/2 sine wave 50 to 60Hz, gate open)

2N6157, 2N6160, 2N6163

2N6158, 2N6161, 2N6164

2N6159, 2N6162, 2N6165

V_DRM

Volts

200

400

600

Peak gate voltage

V_GM

Volts

RMS on-state current (full sine wave, 50 to 60Hz)

(T_C= -65 to +85°C)

I_T(RMS)

Amps

(T_C= 100°C)

Peak non-repetitive surge current

I_TSM

I²t

Amps

A²s

(1 cycle, sine wave, 60 Hz preceded and followed by a 30A RMS current, T_C= 85°C)

250

260

Circuit fusing considerations (t = 8.3ms)

Peak gate power

P_GM

Watts

(T_J= 80°C, pulse width = 2µs)

Average gate power

P_G(AV)

Watts

(T_J= 80°C, t = 8.3ms)

0.5

2.0

Peak gate current

I_GM

T_J

Amps

°C

Operating junction temperature range

Storage temperature range

Stud torque

-65 to +125

-65 to +150

T_stg

°C

In. lb.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

°C/W

Thermal resistance, junction to case

R_ӨJC

Rev. 20130131

2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted

Characteristic

Symbol

Min

Typ.

Max

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM@ T_J= 25°C)

I_DRM, I_RRM

µA

(Rated V_DRMor V_RRM@ T_J= 125°C)

Peak on-state voltage (either direction)

V_TM

Volts

≤ 2%)

(I_TM= 42A peak, pulse width = 1 to 2 ms, duty cycle

1.5

2.0

Gate trigger current (continuous dc)⁽¹⁾

Ω)

(Main terminal voltage = 12V, R_L= 50

MT2(+),G(+)

MT2(+),G(-)

I_GT

MT2(-),G(-)

MT2(-),G(+)

100

200

250

MT2(+),G(+); MT2(-), G(-) T_C= -65°C

MT2(+),G(-); MT2(-), G(+) T_C= -65°C

Gate trigger voltage (continuous dc)

(Main terminal voltage = 12V, R_L= 50Ω)

MT2(+),G(+)

0.8

0.7

0.85

1.1

MT2(+),G(-)

2.1

2.5

3.4

V_GT

Volts

MT2(-),G(-)

MT2(-),G(+)

All quadrants

Ω, T

Main terminal voltage = rated V_DRM, R_L= 10k

_J= 125°C

0.2

Holding current

(Main terminal voltage = 12V, gate open)

(initiating current = 500mA)

MT2(+)

I_H

µs

MT2(-)

Either direction, T_C= -65°C

200

Turn on time

(Main terminal voltage = rated V_DRM, I_TM= 42A, gate source voltage = 12V,

Ω, rise time = 0.1µs, pulse width = 2µs)

t_gt

R_S= 50

Blocking voltage application rate at commutation,

f = 60Hz, T_C= 85°C

On state conditions:

dv/dt(c)

V/µs

(I_TM= 42A, pulse width = 4ms, di/dt = 17.5A/ms)

Off-state conditions:

Ω)

(Main terminal voltage = rated V_DRM, 200µs min., gate source voltage = 0V, R_S= 50

Rev. 20130131

2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

MECHANICAL CHARACTERISTICS

Case

Digi PF2 (2N6157-2N6159)

Body painted, alpha-numeric

Marking

Rev. 20130131

2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

MECHANICAL CHARACTERISTICS

Case

TO-48 (2N6160-2N6162)

Marking

Pin out

Alpha-numeric

See below

Rev. 20130131

2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

MECHANICAL CHARACTERISTICS

Case

TO-48 ISO (2N6163-2N6165)

Marking

Pin out

Alpha-numeric

See below

Rev. 20130131

2N6157-2N6165

THYRISTORS

High-reliability discrete products

and engineering services since 1977

Rev. 20130131

2N6162 相关器件

型号	制造商	描述	价格	文档
2N6163	MOTOROLA	Silicon Bidirectional Triode Thyristors	获取价格
2N6163	NJSEMI	SEMICONDUCTOR DEVICE	获取价格
2N6163	DIGITRON	Descriptive : Triac; Max On-State Current RMS : 30; Max Peak Non Repetitive Surge Current : 250; M	获取价格
2N6164	MOTOROLA	Silicon Bidirectional Triode Thyristors	获取价格
2N6164	NJSEMI	SEMICONDUCTOR DEVICE	获取价格
2N6164	DIGITRON	Descriptive : Triac; Max On-State Current RMS : 30; Max Peak Non Repetitive Surge Current : 250; M	获取价格
2N6165	MOTOROLA	Silicon Bidirectional Triode Thyristors	获取价格
2N6165	NJSEMI	REPETITIVE PEAK OFF-STATE VOLTAGE	获取价格
2N6165	DIGITRON	Descriptive : Triac; Max On-State Current RMS : 30; Max Peak Non Repetitive Surge Current : 250; M	获取价格
2N6165A	NJSEMI	暂无描述	获取价格