S1J

更新时间:2024-09-05 10:19:23
品牌:EIC
描述:SURFACE MOUNT RECTIFIERS

S1J 概述

SURFACE MOUNT RECTIFIERS 表面贴装整流器 整流二极管

S1J 规格参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMA, 2 PIN
Reach Compliance Code:compliant风险等级:5.67
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向恢复时间:1.8 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S1J 数据手册

通过下载S1J数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Certificate TH97/10561QM  
Certificate TW00/17276EM  
SURFACE MOUNT RECTIFIERS  
S1A ~ S1M  
SMA  
PRV : 50 - 1000 Volts  
Io : 1.0 Ampere  
1.3 ± 0.2  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.8 ± 0.2  
2.3 ± 0.2  
2.7 ± 0.2  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.8 ± 0.2  
Dimensions in millimeters  
MECHANICAL DATA :  
* Case : SMA Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.060 gram (Approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
IF  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800 1000  
560 700  
V
V
V
A
Maximum DC Blocking Voltage  
100  
800 1000  
Maximum Average Forward Current (See fig. 1)  
Peak Forward Surge Current  
IFSM  
40  
30  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method) TL = 110 °C  
Maximum Instantaneous Forward Voltage at IF = 1.0 A.  
VF  
IR  
1.1  
V
μA  
1.0  
5.0  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
IR(H)  
Trr  
50  
Ta = 125 °C  
μA  
Typical Reverse Recovery Time (Note 1)  
1.8  
μs  
75  
27  
85  
30  
°C/W  
°C/W  
pF  
RθJA  
RθJL  
CJ  
Typical thermal resistance (Note 2)  
Typical Junction Capacitance at 4.0V, 1 MHz  
Junction Temperature Range  
12  
TJ  
- 55 to + 150  
- 55 to + 150  
°C  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas  
Page 1 of 2  
Rev. 04 : October 26, 2006  
Certificate TH97/10561QM  
Certificate TW00/17276EM  
RATING AND CHARACTERISTIC CURVES ( S1A - S1M )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
50  
40  
30  
20  
1.0  
0.8  
S1A - S1J  
S1K - S1M  
TL = 110°C  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
0.6  
0.4  
S1A - S1J  
S1K - S1M  
0.2  
0
10  
0
0.2 x 0.2" (5.0 x 5.0mm)  
Thick Copper Pad Areas  
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
LEAD TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
10  
Ta = 125 °C  
1.0  
0.1  
1.0  
0.1  
Pulse Width = 300 μs  
2% Duty Cycle  
TJ = 25 °C  
Ta = 25 °C  
0.01  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
40  
60  
80  
100  
120  
0
20  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
FIG. 5 – TYPICAL JUNCTION CAPACITANCE  
100  
10  
1
TJ = 25°C  
f = 1.0 MHZ  
Vsig = 50mVp-p  
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 04 : October 26, 2006  

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