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0806SQ5N5GLC

更新时间：2025-06-29 12:03:41
品牌：FREESCALE
描述：RF Power LDMOS Transistors

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0806SQ5N5GLC 概述

RF Power LDMOS Transistors RF功率LDMOS晶体管

0806SQ5N5GLC 数据手册

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Document Number: AFT05MS031N  
Rev. 0, 6/2012  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
AFT05MS031NR1  
AFT05MS031GNR1  
Enhancement--Mode Lateral MOSFETs  
Designed for mobile two--way radio applications with frequencies from  
136 to 520 MHz. The high gain, ruggedness and broadband performance of  
these devices make them ideal for large--signal, common source amplifier  
applications in mobile radio equipment.  
136--520 MHz, 31 W, 13.6 V  
WIDEBAND  
RF POWER LDMOS TRANSISTORS  
Typical Performance: (13.6 Vdc, T = 25°C, CW)  
A
Frequency  
(MHz)  
G
η
P1dB  
(W)  
ps  
D
(dB)  
18.3  
17.7  
17.7  
(%)  
64.1  
62.0  
71.4  
(1,3)  
380--450  
31  
31  
33  
(2,3)  
450--520  
(4)  
520  
T O -- 2 7 0 -- 2  
PLASTIC  
Load Mismatch/Ruggedness  
AFT05MS031NR1  
Signal  
Type  
Frequency  
(MHz)  
P
(W)  
Test  
Voltage  
out  
VSWR  
Result  
(4)  
520  
CW  
>65:1 at all  
47  
17  
No Device  
Phase Angles  
(3 dB Overdrive)  
Degradation  
1. Measured in 380--450 MHz UHF wideband reference circuit.  
2. Measured in 450--520 MHz UHF wideband reference circuit.  
3. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
T O -- 2 7 0 -- 2 G U L L  
PLASTIC  
AFT05MS031GNR1  
4. Measured in 520 MHz narrowband test circuit.  
Features  
•
•
•
•
•
Characterized for Operation from 136 to 520 MHz  
Unmatched Input and Output Allowing Wide Frequency Range Utilization  
Integrated ESD Protection  
Integrated Stability Enhancements  
Wideband — Full Power Across the Band:  
− 136--174 MHz  
Gate  
Drain  
− 380--450 MHz  
− 450--520 MHz  
•
•
•
•
•
225°C Capable Plastic Package  
Exceptional Thermal Performance  
High Linearity for: TETRA, SSB, LTE  
Cost--effective Over--molded Plastic Packaging  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Typical Applications  
•
•
Output Stage VHF Band Mobile Radio  
Output Stage UHF Band Mobile Radio  
© Freescale Semiconductor, Inc., 2012. All rights reserved.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +40  
--6.0, +12  
17, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
Drain--Source Voltage  
Gate--Source Voltage  
Operating Voltage  
V
DSS  
V
GS  
DD  
V
Storage Temperature Range  
T
stg  
--65 to +150  
Total Device Dissipation @ T = 25°C  
P
294  
W
C
D
Derate above 25°C  
1.47  
W/°C  
(1,2)  
Operating Junction Temperature  
T
J
225  
°C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
0.67  
°C/W  
JC  
Case Temperature 79°C, 31 W CW, 13.6 Vdc, I = 10 mA, 520 MHz  
DQ  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2, passes 2500 V  
A, passes 100 V  
IV, passes 2000 V  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
°C  
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
I
I
—
—
—
—
—
—
2
1
μAdc  
μAdc  
nAdc  
DSS  
DSS  
GSS  
(V = 40 Vdc, V = 0 Vdc)  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 13.6 Vdc, V = 0 Vdc)  
DS  
GS  
Gate--Source Leakage Current  
I
600  
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 115 μAdc)  
V
1.6  
—
2.1  
0.13  
5.8  
2.6  
—
Vdc  
Vdc  
S
GS(th)  
DS  
D
Drain--Source On--Voltage  
(V = 10 Vdc, I = 1.2 Adc)  
V
DS(on)  
GS  
D
Forward Transconductance  
(V = 10 Vdc, I = 7.5 Adc)  
g
—
—
fs  
GS  
D
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
(continued)  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Dynamic Characteristics  
Reverse Transfer Capacitance  
C
—
—
—
1.6  
49.5  
109  
—
—
—
pF  
pF  
pF  
rss  
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
GS  
Output Capacitance  
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
oss  
GS  
Input Capacitance  
C
iss  
(V = 13.6 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)  
DS  
GS  
(1)  
Functional Tests  
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 13.6 Vdc, I = 10 mA, P = 31 W, f = 520 MHz  
DD DQ out  
Common--Source Amplifier Power Gain  
Drain Efficiency  
G
16.5  
17.7  
71.4  
19.0  
—
dB  
%
ps  
η
70.0  
D
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 10 mA)  
DQ  
Frequency  
(MHz)  
Signal  
Type  
P
out  
(W)  
VSWR  
Test Voltage, V  
Result  
No Device Degradation  
DD  
520  
CW  
>65:1 at all Phase Angles  
47  
17  
(3 dB Overdrive)  
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull  
wing (GN) parts.  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
3
TYPICAL CHARACTERISTICS  
7
1000  
T = 25°C  
A
V
= 4.25 Vdc  
4 Vdc  
GS  
Measured with ±30 mV(rms)ac @ 1 MHz, V = 0 Vdc  
GS  
6
C
iss  
5
4
100  
10  
1
C
oss  
3.75 Vdc  
3.5 Vdc  
3
2
1
3.25 Vdc  
3 Vdc  
C
rss  
2.75 Vdc  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
V
, DRAIN--SOURCE VOLTAGE (VOLTS)  
V
, DRAIN--SOURCE VOLTAGE (VOLTS)  
DS  
DS  
Note: Measured with both sides of the transistor tied together.  
Figure 2. Capacitance versus Drain--Source Voltage  
Figure 3. Drain Current versus Drain--Source Voltage  
9
10  
V
= 13.6 Vdc  
DD  
8
10  
I
D
= 2.5 Amps  
7
10  
3.2 Amps  
3.9 Amps  
6
10  
10  
5
4
10  
90  
110  
130  
150  
170  
190  
210  
230  
250  
T , JUNCTION TEMPERATURE (°C)  
J
Note: MTTF value represents the total cumulative operating time  
under indicated test conditions.  
Figure 4. MTTF versus Junction Temperature -- CW  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
4
520 MHz NARROWBAND PRODUCTION TEST FIXTURE  
C1  
C7  
C14  
B2  
C13  
B3  
B1  
C16  
C3  
C2  
C5  
C4  
C18  
C8  
L2  
C11  
C9  
L1  
C15  
C6  
C10  
C12  
C17  
AFT05MS031N  
Rev. 1  
Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz  
Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz  
Part  
Description  
Part Number  
Manufacturer  
B1, B2, B3  
C1  
RF Beads, Long  
2743021447  
Fair--Rite  
22 μF, 35 V Tantalum Capacitor  
0.01 μF Chip Capacitors  
0.1 μF Chip Capacitors  
200 pF Chip Capacitor  
6.2 pF Chip Capacitor  
3.9 pF Chip Capacitor  
180 pF Chip Capacitors  
10 pF Chip Capacitor  
T491X226K035AT  
C0805C103K5RAC  
CDR33BX104AKWS  
ATC100B201JT300XT  
ATC100B6R2JT500XT  
ATC100B3R9JT500XT  
ATC100B181JT200XT  
ATC100B100JT500XT  
ATC100B360JT500XT  
ATC100B270JT500XT  
ATC100B7R5JT500XT  
SME63V471M12X25LL  
B10TJLC  
Kemet  
Kemet  
Kemet  
ATC  
C2, C14  
C3, C13  
C4  
C5  
ATC  
C6  
ATC  
C7, C16  
C8  
ATC  
ATC  
C9, C10, C11, C12  
36 pF Chip Capacitors  
27 pF Chip Capacitor  
ATC  
C15  
C17  
C18  
L1  
ATC  
7.5 pF Chip Capacitor  
470 μF, 63 V Electrolytic Capacitor  
43 nH, 10 Turn Inductor  
56 nH Inductor  
ATC  
United Chemi--Con  
Coilcraft  
Coilcraft  
Arlon  
L2  
1812SMS--56NJLC  
AD255A  
PCB  
0.030″, ε = 2.55  
r
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
5
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
6
TYPICAL CHARACTERISTICS — 520 MHz  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 13.6 Vdc, P = 0.6 W  
in  
DD  
V
= 13.6 Vdc, P = 0.3 W  
in  
DD  
V
= 12.5 Vdc, P = 0.6 W  
in  
DD  
V
P
= 12.5 Vdc  
= 0.3 W  
DD  
in  
f = 520 MHz  
5
0
0
1
2
3
4
6
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
Figure 7. Output Power versus Gate--Source Voltage  
20  
90  
80  
70  
V
= 13.6 Vdc, I = 10 mA  
DQ  
DD  
19  
18  
f = 520 MHz  
η
D
60  
50  
40  
17  
16  
15  
14  
13  
12  
G
ps  
P
out  
30  
20  
10  
0
11  
0.03  
0.1  
1
3
P , INPUT POWER (WATTS)  
in  
Figure 8. Power Gain, Output Power and Drain  
Efficiency versus Input Power  
V
= 13.6 Vdc, I = 10 mA, P = 31 W Avg.  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
Ω
Ω
520  
0.72 + j1.77  
1.54 + j0.80  
Z
Z
= Test circuit impedance as measured from  
gate to ground.  
source  
= Test circuit impedance as measured from  
drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
50 Ω  
50 Ω  
Z
Z
load  
source  
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
7
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM  
Table 8. 380--450 MHz UHF Wideband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)  
DQ  
A
Frequency  
(MHz)  
G
η
P1dB  
(W)  
ps  
D
(dB)  
18.7  
18.6  
18.3  
(%)  
64.1  
67.0  
68.1  
380  
420  
450  
31  
31  
31  
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)  
Frequency  
(MHz)  
Signal  
Type  
P
out  
(W)  
VSWR  
Test Voltage, V  
Result  
DD  
420  
CW  
>65:1 at all  
62  
17  
No Device  
Phase Angles  
(3 dB Overdrive)  
Degradation  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
8
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT  
V
V
DS  
GS  
B2  
C12  
C11  
B1  
R1  
C1  
L1  
C13  
C14 C15  
C17  
C16  
J1  
C6  
TO -- 2 7 0 -- 2  
Rev. 0  
L7  
C10  
C5*  
C8  
L4  
C2  
L2  
Q1  
L6  
C7  
C4*  
L3  
L5  
C3  
C9  
* C4 and C5 are mounted vertically.  
Figure 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 380--450 MHz  
Table 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 380--450 MHz  
Part  
Description  
Part Number  
Manufacturer  
B1  
Low Current Ferrite Bead  
2508051107Y0  
Fair--Rite  
B2  
High Current Ferrite Bead  
56 pF Chip Capacitors  
3.9 pF Chip Capacitor  
18 pF Chip Capacitor  
47 pF Chip Capacitor  
240 pF Chip Capacitors  
24 pF Chip Capacitor  
68 pF Chip Capacitor  
27 pF Chip Capacitor  
8.2 pF Chip Capacitor  
3.0 pF Chip Capacitor  
0.1 μF Chip Capacitor  
1 μF Chip Capacitor  
10 μF Chip Capacitors  
3 Pin Connector  
2518065007Y6  
Fair--Rite  
ATC  
C1, C5  
C2  
ATC600F560JT250XT  
ATC600F3R9BT250XT  
ATC600F180JT250XT  
ATC600F470JT250XT  
ATC600F241JT250XT  
ATC600F240JT250XT  
ATC600F680JT250XT  
ATC600F270JT250XT  
ATC600F8R2BT250XT  
ATC600F3R0BT250XT  
GRM21BR71H104KA01B  
GRM21BR71H105KA12L  
GRM31CR61H106KA12L  
AMP--9--146305--0  
0806SQ--5N5GLC  
ATC  
C3  
ATC  
C4  
ATC  
C6, C12, C15  
ATC  
C7  
ATC  
C8  
ATC  
C9  
ATC  
C10  
ATC  
C11  
ATC  
C13  
Murata  
Murata  
Murata  
TE Connectivity  
Coilcraft  
Coilcraft  
Coilcraft  
Coilcraft  
Freescale  
Susumu  
Shengyi  
C14  
C16, C17  
J1  
L1, L2, L3, L6  
5.5 nH Inductors  
L4  
17 nH Inductor  
0908SQ--17NGLC  
L5  
1.65 nH Inductor  
0906--2KLC  
L7  
2.55 nH Inductor  
0906--3JLC  
Q1  
R1  
PCB  
RF Power LDMOS Transistor  
62 Ω, 1/4 W Chip Resistor  
AFT05MS031NR1  
RG2012N--620--BT1  
S1000--2, FR4  
0.020″, ε = 4.9  
r
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
9
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
10  
TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND  
REFERENCE CIRCUIT  
18  
80  
75  
70  
65  
60  
30  
29  
28  
27  
26  
25  
V
DQ  
= 12.5 Vdc, P = 0.5 W (Avg.)  
in  
DD  
17.9  
17.8  
17.7  
17.6  
I
= 100 mA  
η
D
G
P
ps  
17.5  
17.4  
17.3  
17.2  
out  
17.1  
17  
370 380  
390 400  
410  
420  
430 440 450 460  
f, FREQUENCY (MHz)  
Figure 12. Power Gain, Output Power and Drain Efficiency versus  
Frequency at a Constant Input Power — 12.5 V  
18.5  
80  
75  
70  
65  
60  
35  
34  
33  
32  
31  
30  
V
DQ  
= 13.6 Vdc, P = 0.5 W (Avg.)  
in  
DD  
18.4  
18.3  
18.2  
18.1  
I
= 100 mA  
η
D
G
ps  
18  
17.9  
17.8  
17.7  
P
out  
17.6  
17.5  
430  
f, FREQUENCY (MHz)  
370 380 390 400  
410 420  
440 450 460  
Figure 13. Power Gain, Output Power and Drain Efficiency versus  
Frequency at a Constant Input Power — 13.6 V  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
11  
TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND  
REFERENCE CIRCUIT  
50  
40  
V
= 13.6 Vdc, P = 0.5 W  
in  
DD  
5
4
3
V
= 13.6 Vdc, P = 0.25 W  
in  
V
P
= 13.6 Vdc,  
= 0.5 W  
DD  
DD  
V
= 13.6 Vdc, P = 0.25 W  
in  
DD  
in  
V
= 12.5 Vdc, P = 0.5 W  
in  
DD  
30  
20  
10  
V
P
= 12.5 Vdc,  
= 0.5 W  
DD  
in  
V
P
= 12.5 Vdc,  
= 0.25 W  
DD  
2
1
0
in  
V
P
= 12.5 Vdc,  
= 0.25 W  
DD  
in  
f = 420 MHz  
f = 420 MHz  
1.6  
Detail A  
0
0.4  
0.8  
2
1.2  
0
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
2
0
1
3
4
5
Detail A  
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
Figure 14. Output Power versus Gate--Source Voltage  
100  
80  
60  
40  
20  
0
80  
70  
60  
50  
40  
22  
20  
18  
16  
V
= 13.6 Vdc, I = 100 mA  
DQ  
DD  
420 MHz  
420 MHz  
450 MHz  
450 MHz  
380 MHz  
420 MHz  
450 MHz  
G
ps  
380 MHz  
30  
380 MHz  
14  
12  
P
out  
20  
10  
η
D
0.01  
0.1  
P , INPUT POWER (WATTS)  
1
4
in  
Figure 15. Power Gain, Output Power and Drain  
Efficiency versus Input Power and Frequency  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
12  
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT  
Z = 5 Ω  
o
f = 450 MHz  
f = 380 MHz  
Z
source  
f = 380 MHz  
f = 450 MHz  
Z
load  
V
= 13.6 Vdc, I = 10 mA, P = 31 W Avg.  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
380  
390  
400  
410  
420  
430  
440  
450  
Ω
Ω
1.57 + j1.94  
1.66 + j2.07  
1.74 + j2.16  
1.79 + j2.20  
1.79 + j2.21  
1.74 + j2.21  
1.62 + j2.23  
1.45 + j2.29  
2.53 -- j0.27  
2.53 -- j0.26  
2.56 -- j0.27  
2.49 -- j0.29  
2.38 -- j0.28  
2.26 -- j0.24  
2.11 -- j0.16  
1.95 -- j0.05  
Z
Z
= Test circuit impedance as measured from  
gate to ground.  
source  
= Test circuit impedance as measured from  
drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
50 Ω  
50 Ω  
Z
Z
load  
source  
Figure 16. UHF Wideband Series Equivalent Source and Load Impedance — 380--450 MHz  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
13  
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM  
Table 12. 450--520 MHz UHF Wideband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)  
DQ  
A
Frequency  
(MHz)  
G
η
P1dB  
(W)  
ps  
D
(dB)  
17.7  
18.7  
17.9  
(%)  
62.0  
63.8  
67.0  
450  
490  
520  
31  
31  
31  
Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)  
Frequency  
(MHz)  
Signal  
Type  
P
out  
(W)  
VSWR  
Test Voltage, V  
Result  
DD  
490  
CW  
>65:1 at all  
62  
17  
No Device  
Phase Angles  
(3 dB Overdrive)  
Degradation  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
14  
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT  
V
V
DS  
GS  
C1  
L1  
B1  
R1  
C17  
B2  
C13 C14 C15  
C19  
C18  
J1  
C16  
C12  
L7  
TO -- 2 7 0 -- 2  
Rev. 0  
C5  
C6  
C11  
C9  
L4  
Q1  
C8  
C2  
L2  
C4  
C7  
L6  
L3  
L5  
C3  
C10  
Figure 17. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 450--520 MHz  
Table 14. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 450--520 MHz  
Part  
Description  
Part Number  
Manufacturer  
B1  
Low Current Ferrite Bead  
2508051107Y0  
Fair--Rite  
B2  
High Current Ferrite Bead  
56 pF Chip Capacitor  
2.7 pF Chip Capacitor  
12 pF Chip Capacitor  
27 pF Chip Capacitors  
33 pF Chip Capacitors  
39 pF Chip Capacitor  
18 pF Chip Capacitors  
8.2 pF Chip Capacitor  
1.8 pF Chip Capacitor  
0.1 μF Chip Capacitor  
1 μF Chip Capacitor  
240 pF Chip Capacitors  
10 μF Chip Capacitors  
3 Pin Connector  
2518065007Y6  
Fair--Rite  
ATC  
C1  
ATC600F560JT250XT  
ATC600F2R7BT250XT  
ATC600F120JT250XT  
ATC600F270JT250XT  
ATC600F330JT250XT  
ATC600F390JT250XT  
ATC600F180JT250XT  
ATC600F8R2BT250XT  
ATC600F1R8BT250XT  
GRM21BR71H104KA01B  
GRM21BR71H105KA12L  
ATC600F241JT250XT  
GRM31CR61H106KA12L  
AMP--9--146305--0  
C2  
ATC  
C3  
ATC  
C4, C9  
C5, C8  
C6  
ATC  
ATC  
ATC  
C7, C10  
C11  
C12  
C13  
C14  
ATC  
ATC  
ATC  
Murata  
Murata  
ATC  
C15, C16, C17  
C18, C19  
J1  
Murata  
TE Connectivity  
Coilcraft  
Coilcraft  
Coilcraft  
Coilcraft  
Freescale  
Susumu  
Shengyi  
L1, L3  
L2, L6  
L4  
6.0 nH Inductors  
0806SQ--6N0GLC  
5.5 nH Inductors  
0806SQ5N5GLC  
17 nH Inductor  
0908SQ--17NGLC  
L5, L7  
Q1  
1.65 nH Inductors  
0906--2KLC  
RF Power LDMOS Transistor  
62 Ω, 1/4 W Chip Resistor  
AFT05MS031NR1  
R1  
RG2012N--620--BT1  
S1000--2, FR4  
PCB  
0.020″, ε = 4.9  
r
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
15  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
16  
TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND  
REFERENCE CIRCUIT  
18  
70  
68  
66  
64  
62  
60  
30  
29  
28  
27  
26  
V
DQ  
= 12.5 Vdc, P = 0.5 W (Avg.)  
in  
η
DD  
17.8  
17.6  
17.4  
17.2  
D
I
= 100 mA  
G
ps  
17  
16.8  
16.6  
16.4  
P
out  
16.2  
16  
440 450  
460 470  
480  
490  
500 510 520 530  
f, FREQUENCY (MHz)  
Figure 19. Power Gain, Drain Efficiency and Output Power versus  
Frequency at a Constant Input Power — 12.5 V  
19  
18.75  
18.5  
18.25  
18  
17.75  
17.5  
17.25  
17  
73  
71  
69  
V
DQ  
= 13.6 Vdc, P = 0.5 W (Avg.)  
in  
DD  
I
= 100 mA  
67  
65  
63  
61  
36  
34  
32  
30  
G
ps  
η
D
P
out  
16.75  
16.5  
16.25  
16  
28  
26  
440 450  
460 470  
480  
490  
500 510  
520 530  
f, FREQUENCY (MHz)  
Figure 20. Power Gain, Drain Efficiency and Output Power versus  
Frequency at a Constant Input Power — 13.6 V  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
17  
TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND  
REFERENCE CIRCUIT  
60  
50  
40  
30  
20  
10  
25  
20  
15  
V
= 13.6 Vdc, P = 0.5 W  
in  
DD  
V
= 13.6 Vdc, P = 0.25 W  
in  
DD  
V
P
= 13.6 Vdc,  
= 0.5 W  
DD  
V
= 13.6 Vdc, P = 0.25 W  
in  
DD  
in  
V
= 12.5 Vdc, P = 0.5 W  
in  
DD  
V
P
= 12.5 Vdc,  
= 0.5 W  
DD  
in  
V
P
= 12.5 Vdc,  
= 0.25 W  
DD  
10  
5
V
P
= 12.5 Vdc,  
= 0.25 W  
DD  
in  
in  
f = 490 MHz  
f = 490 MHz  
2.5  
0
Detail A  
0
0.5  
1
2
3
3.5  
1.5  
0
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
2
0
1
3
4
5
6
Detail A  
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
Figure 21. Output Power versus Gate--Source Voltage  
80  
60  
20  
18  
16  
14  
12  
520 MHz  
490 MHz  
G
ps  
450 MHz  
490 MHz  
520 MHz  
η
D
450 MHz  
490 MHz  
520 MHz  
40  
20  
0
450 MHz  
P
out  
V
= 13.6 Vdc, I = 100 mA  
DD  
DQ  
0.01  
0.1  
P , INPUT POWER (WATTS)  
1
3
in  
Figure 22. Power Gain, Output Power and Drain  
Efficiency versus Input Power and Frequency  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
18  
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT  
f = 520 MHz  
Z = 5 Ω  
o
f = 450 MHz  
Z
source  
f = 520 MHz  
f = 450 MHz  
Z
load  
V
= 13.6 Vdc, I = 100 mA, P = 31 W Avg.  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
450  
460  
470  
480  
490  
500  
510  
520  
Ω
Ω
1.37 + j1.64  
1.43 + j1.72  
1.47 + j1.79  
1.49 + j1.83  
1.47 + j1.86  
1.41 + j1.89  
1.32 + j1.93  
1.20 + j1.99  
2.57 -- j1.01  
2.49 -- j1.03  
2.38 -- j1.03  
2.26 -- j1.01  
2.11 -- j0.95  
1.97 -- j0.87  
1.82 -- j0.76  
1.68 -- j0.62  
Z
Z
= Test circuit impedance as measured from  
gate to ground.  
source  
= Test circuit impedance as measured from  
drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
50 Ω  
50 Ω  
Z
Z
load  
source  
Figure 23. UHF Wideband Series Equivalent Source and Load Impedance — 450--520 MHz  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
19  
PACKAGE DIMENSIONS  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
20  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
21  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
22  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
23  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
24  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
25  
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS  
Refer to the following documents, software and tools to aid your design process.  
Application Notes  
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages  
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
Software  
•
•
•
•
Electromigration MTTF Calculator  
RF High Power Model  
.s2p File  
Development Tools  
•
Printed Circuit Boards  
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the  
Software & Tools tab on the part’s Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
June 2012  
•
Initial Release of Data Sheet  
AFT05MS031NR1 AFT05MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
26  
How to Reach Us:  
Information in this document is provided solely to enable system and software  
implementers to use Freescale products. There are no express or implied copyright  
licenses granted hereunder to design or fabricate any integrated circuits based on the  
information in this document.  
Home Page:  
freescale.com  
Web Support:  
freescale.com/support  
Freescale reserves the right to make changes without further notice to any products  
herein. Freescale makes no warranty, representation, or guarantee regarding the  
suitability of its products for any particular purpose, nor does Freescale assume any  
liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation consequential or incidental  
damages. “Typical” parameters that may be provided in Freescale data sheets and/or  
specifications can and do vary in different applications, and actual performance may  
vary over time. All operating parameters, including “typicals,” must be validated for  
each customer application by customer’s technical experts. Freescale does not convey  
any license under its patent rights nor the rights of others. Freescale sells products  
pursuant to standard terms and conditions of sale, which can be found at the following  
address: http://www.reg.net/v2/webservices/Freescale/Docs/TermsandConditions.htm.  
Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire,  
C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor  
Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of  
Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack,  
ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge,  
QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic  
are trademarks of Freescale Semiconductor, Inc. All other product or service names  
are the property of their respective owners.  
E 2012 Freescale Semiconductor, Inc.  
Document Number: AFT05MS031N  
Rev. 0, 6/2012  

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