概述
数据手册100B8R2CW 概述
RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS宽带集成功率放大器
100B8R2CW 数据手册
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PDF下载Document Number: MW4IC2230N
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W-CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi-stage structure. Its
wideband on-chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W-CDMA.
MW4IC2230NBR1
MW4IC2230GNBR1
2110-2170 MHz, 30 W, 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
Final Application
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1
=
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
INTEGRATED POWER AMPLIFIERS
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = -45 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, I
=
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, ChDanQn1el
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
CASE 1329-09
TO-272 WB-16
PLASTIC
ACPR @ 5 MHz = -53.5 dBc in 3.84 MHz Bandwidth
MW4IC2230NBR1
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 10 mW to 5 W CW
Pout
.
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
• Integrated Quiescent Current Temperature Compensation
MW4IC2230GNBR1
with Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1
2
3
4
5
V
GND
RD1
16
15
GND
V
V
V
DS2
RD1
RG1
V
RG1
V
DS1
V
V
DS2
V
DS3/
RF
RF
in
DS1
3 Stages I
6
14
C
out
7
8
9
10
V
GS1
V
GS2
V
GS3
RF
in
V /RF
DS3 out
13
12
GND
11
GND
V
GS1
V
GS2
V
GS3
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +8
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
V
DSS
V
GS
T
stg
T
J
°C
P
in
20
dBm
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
°C/W
θ
JC
Stage 1
Stage 2
Stage 3
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
= 60 mA, I = 350 mA, I
DQ2
Typ
Max
= 265 mA,
DQ3
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
P
out
= 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single-carrier W-CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
29
—
31.5
-25
—
dB
dB
ps
Input Return Loss
IRL
-10
Adjacent Channel Power Ratio
ACPR
dBc
P
out
P
out
= 0.4 W Avg.
= 1.26 W Avg.
—
—
-53.5
-52
-50
—
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W-CDMA driver) V = 28 Vdc, I
= 60 mA, I
= 350 mA,
DD
DQ1
DQ2
I
= 265 mA, 2110 MHz<Frequency <2170 MHz
DQ3
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
P
sat
—
43
—
W
(2)
Quiescent Current Accuracy over Temperature (-10 to 85°C)
Gain Flatness in 30 MHz Bandwidth
ΔI
—
—
—
—
—
5
0.13
1
—
—
—
—
—
%
dB
°
QT
G
F
Deviation from Linear Phase in 30 MHz Bandwidth
Φ
Delay @ P = 0.4 W CW Including Output Matching
Delay
1.6
15
ns
°
out
Part-to-Part Phase Variation
ΔΦ
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Reference Application Circuit tuned for 2-carrier W-CDMA signal) V = 28 Vdc,
DD
P
out
= 0.4 W Avg., I
= 60 mA, I
= 400 mA, I
= 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,
DQ1
DQ2
DQ3
2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3
measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
—
—
—
—
31.5
-52
-55
-26
—
—
—
—
dB
dBc
dBc
dB
ps
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
3
V
V
V
D3
D2
+
+
1
2
3
4
5
DUT
16
C7
C3
C2
C5
D1
NC 15
Z2
+
NC
NC
C1
C6
Z1
RF
OUTPUT
RF
INPUT
C9
Z4
Z5
Z6
Z7
14
6
C10
C11
C12
7
8
NC
V
R1
G1
Quiescent Current
Temperature Compensation
9
Z3
NC 13
12
10
11
V
G2 R2
G3 R3
+
V
C8
C4
Z1
Z2, Z3
Z4
2.180″ x 0.090″ Microstrip
0.040″ x 0.430″ Microstrip
0.350″ x 0.240″ Microstrip
0.420″ x 0.090″ Microstrip
Z6
Z7
PCB
1.120″ x 0.090″ Microstrip
0.340″ x 0.090″ Microstrip
Taconic TLX8-0300, 0.030″, ε = 2.55
r
Z5
Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic
Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
Description
10 μF, 35 V Tantalum Capacitors
8.2 pF 100B Chip Capacitors
1.8 pF 100B Chip Capacitors
0.3 pF 100B Chip Capacitor
1.8 kW Chip Resistors (1206)
Part Number
TAJD106K035
Manufacturer
AVX
C5, C6, C7, C8, C12
C9, C10
100B8R2CW
100B1R8BW
100B0R3BW
ATC
ATC
ATC
C11
R1, R2, R3
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
4
C2
C3
V
D2
MW4IC2230
Rev 1
V
D3
V
D1
C5
C7
C1
C12
C6
C9
C11
C10
C8
R1
V
G1
GND
R3
R2
V
G2
V
G3
C4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32
31
0
G
ps
−10
30
29
28
−20
−30
−40
IRL
V
P
= 28 Vdc
= 26 dBm (Avg.)
DD
out
I
DQ1
1−Carrier W−CDMA
= 60 mA, I
= 350 mA, I
= 265 mA
DQ2
DQ3
27
26
−50
−60
ACPR
2050
2100
2150
f, FREQUENCY (MHz)
2200
Figure 5. Single-Carrier W-CDMA Wideband
Performance @ Pout = 26 dBm
−40
−45
32
31
30
29
28
0
T
C
= 85_C
25_C
G
V
= 28 Vdc
= 60 mA, I
ps
DD
I
= 350 mA, I
DQ3
f = 2140 MHz, 1−Carrier W−CDMA
= 265 mA
DQ1
DQ2
−10
−20
−30
−40
−50
−60
IRL
−50
−55
−60
−30_C
V
P
= 28 Vdc
= 31 dBm (Avg.)
DD
out
I
DQ1
1−Carrier W−CDMA
= 60 mA, I
= 350 mA, I
= 265 mA
DQ2
DQ3
ACPR
27
26
0.1
1
, OUTPUT POWER (WATTS) AVG.
10
2050
2100
2150
f, FREQUENCY (MHz)
2200
P
out
Figure 6. Single-Carrier W-CDMA Wideband
Performance @ Pout = 31 dBm
Figure 7. Adjacent Channel Power Ratio
versus Output Power
33
0
32
31
−10
G
ps
−20
IRL
30
−30
−40
V
P
= 28 Vdc
= 26 dBm (Avg.)
DD
out
29
I
DQ1
2−Carrier W−CDMA
= 60 mA, I
= 400 mA, I
= 245 mA
DQ2
DQ3
IM3
−50
−60
28
27
ACPR
2050
2100
2150
f, FREQUENCY (MHz)
2200
Figure 8. 2-Carrier W-CDMA Wideband Performance
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
2.00
P3dB = 46.3 dBm (43 W)
P1dB = 45.3 dBm (34 W)
Ideal
V
= 28 Vdc, Small Signal
= 60 mA, I
DD
1.95
I
= 350 mA, I
= 265 mA
DQ1
DQ2
DQ3
1.90
Actual
1.85
1.80
1.75
1.70
1.65
V
= 28 Vdc
= 60 mA, I
DD
I
= 350 mA, I = 265 mA,
DQ3
1.60
1.55
DQ1
DQ2
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
1.50
2
4
6
8
10 12 14 16 18 20 22 24
1950
2000
2050
2100
2150
2200
2250
2300
P , INPUT POWER (dBm)
in
f, FREQUENCY (MHz)
Figure 9. Output Power versus Input Power
Figure 10. Delay versus Frequency
1.E+09
3rd Stage
2nd Stage
1.E+08
1.E+07
1st Stage
1.E+06
1.E+05
1.E+04
90
100 110 120 130 140 150 160 170 180 190
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 11. MTTF Factor versus Temperature Junction
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
7
Z *
in
Z
*
load
f = 2050 MHz
f = 2230 MHz
f = 2050 MHz
f = 2230 MHz
Z = 50 Ω
o
V
DD
= 28 V, I
= 60 mA, I
= 350 mA, I = 265 mA, P = 26 dBm
DQ3 out
DQ1
DQ2
f
Z
in
Z
load
MHz
Ω
Ω
2050
2110
2140
42.18 + j1.49
41.06 - j1.30
40.49 - j2.42
8.52 - j0.46
8.58 - j0.20
8.63 - j0.09
2170
2230
40.05 - j3.45
39.29 - j6.31
8.69 - j0.01
8.81 + j0.04
Z
Z
=
Device input impedance as measured from
gate to ground.
in
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Z
Z
in
load
Figure 12. Series Equivalent Input and Load Impedance
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
8
NOTES
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
10
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
11
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
12
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
13
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
14
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
15
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Document Number: MW4IC2230N
Rev. 6, 5/2006
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