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S15454-01WT

更新时间：2025-07-11 11:17:35

品牌：HAMAMATSU

描述：NIR 增强型通过 TOF（飞行时间）方法测量到物体的距离有效像素数：96×72

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概述
数据手册

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S15454-01WT 概述

NIR 增强型通过 TOF（飞行时间）方法测量到物体的距离有效像素数：96×72

S15454-01WT 数据手册

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Distance area image sensor

S15454-01WT

NIR-enhanced type,

measures the distance to an object by TOF method

The distance image sensor is designed to measure the distance to an object by TOF (time-of-ﬂight) method. When used in

combination with a pulse modulated light source, this sensor outputs phase diﬀerence information on the timing that the light

is emitted and received. Distance data can be obtained by performing calculation on the output signal with an external signal

processing circuit or on a PC. We provide an evaluation kit for this product. Contact us for detailed information.

Features

Applications

High sensitivity in the near infrared region

Improved tolerance to background light

Number of effective pixels: 96 (H) × 72 (V)

Compact chip size package (CSP) type

Obstacle detection (self-driving, robots, etc.)

Security (intrusion detection, etc.)

Shape recognition (logistics, robots, etc.)

Motion capture

Touchless operation

Structure

Parameter

Image size

Pixel size

Speciﬁcation

4.8 × 3.6

50 × 50

Unit

µm

Pixel pitch

µm

Number of pixels

Number of eﬀective pixels

Package

104 × 80

96 × 72

CSP

pixels

Note: This product is not hermetically sealed.

Absolute maximum ratings

Parameter

Analog supply voltage

Digital supply voltage

Symbol

Vdd(A)

Vdd(D)

Condition

Ta=25 °C

Value

-0.3 to +4.2

Unit

Pixel reset

Analog input

VTX power supply

Photosensitive area

Frame reset pulse

Frame sync trigger pulse

Line sync trigger pulse

Pixel reset pulse

Vdd(VTX) Ta=25 °C

-0.3 to Vdd(A) + 0.3

-0.3 to Vdd(D) + 0.3

terminal voltage

Vpg

Reset

Vst

Hst

Ext_reset

MCLK

Digital input

terminal voltage

Ta=25 °C

Master clock pulse

Charge transfer clock pulse voltage

Operating temperature

Storage temperature

Soldering temperature*²

VTX1, VTX2, VTX3 Ta=25 °C

-0.3 to Vdd(A) + 0.3

-25 to +85

Topr

Tstg

Tsol

No dew condensation*¹

°C

-40 to +85

260 (twice)

*1: When there is a temperature diﬀerence between a product and the surrounding area in high humidity environment, dew condensation

may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.

*2: Reﬂow soldering, IPC/JEDEC J-STD-020 MSL 2, see P.11

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product

within the absolute maximum ratings.

www.hamamatsu.com

Distance area image sensor

S15454-01WT

Recommended terminal voltage (Ta=25 °C)

Parameter

Analog supply voltage

Digital supply voltage

Symbol

Vdd(A)

Vdd(D)

Min.

3.2

2.5

1.6

0.6

Typ.

3.3

2.6

1.8

0.8

Max.

3.4

2.7

2.0

1.0

Unit

Pixel reset

Bias voltage

VTX power supply Vdd(VTX)

Photosensitive area

High level

Low level

High level

Low level

High level

Low level

High level

Low level

High level

Low level

High level

Low level

Vpg

Vdd(D) × 0.8

Frame reset pulse voltage

Reset

Vdd(D) 0.2

Vdd(D) × 0.8

Frame sync trigger pulse

voltage

Vst

Hst

Vdd(D) 0.2

Vdd(D) × 0.8

Line sync trigger pulse

voltage

Vdd(D) 0.2

Vdd(D) × 0.8

Master clock pulse voltage

Pixel reset pulse voltage

MCLK

Ext_reset

DCLK

Vdd(D) 0.2

Vdd(D) × 0.8

Vdd(D) 0.2

Vdd(D) 0.8

Output signal sync pulse

voltage

Vdd(D) 0.2

Electric characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V]

Parameter

Clock pulse frequency

Data rate

Symbol

f(MCLK)

Condition

Min.

1 M

Typ.

Max.

10 M

Unit

f(MCLK)

Current consumption

Dark state

Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V, Vr=2.6 V, MCLK=10 MHz]

Parameter

Spectral response range

Symbol

Min.

Typ.

500 to 1100

Max.

Unit

800

Peak sensitivity wavelength

λp

Vor

PRNU

V/(W⸱s)

V/s

mV rms

Photosensitivity*³

1 × 10¹²

Dark output

Random noise

2.8

0.5

2.35

Dark output voltage*⁴

Sensitivity ratio*⁵

0.7

1.43

±10

Photoresponse nonuniformity*⁶

*3: Monochromatic wavelength light source (λ=805 nm)

*4: Output value right after reset in dark state

*5: Output ratio of Vout1 (VTX1=1.8 V, VTX2=VTX3=0 V) to Vout2 (VTX2=1.8 V, VTX1=VTX3=0 V)

*6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly

illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 64 pixels excluding 8 pixels each at

both ends, and is deﬁned as follows.

PRNU=(∆X/X) × 100 [%]

X: average of the output of all pixel, ∆X: diﬀerence between the maximum or minimum output and X

Distance area image sensor

S15454-01WT

Spectral response (typical example)

Basic connection example

Buffer amp

Vout1

(Ta=25 °C)

1.0

0.8

0.6

0.4

Vout2

Buffer amp

KMPDC0486EA

0.2

500

600

700

800

900 1000 1100 1200

Wavelength (nm)

KMPDB0564EA

Block diagram

GND(A) Vdd(A) Vdd(VTX)

VTX1 VTX2 VTX3

GND(VTX) GND(VTX) Vdd(VTX)

CLTX

C^LTX

Bias

generator

Vdd(A)

Vpg

Photodiode array

104 × 80ġpixels

(

Number of effective pixelsĻ 96 × 72)

Ext_reset

Reset

Vst

Sample-and-hold circuit

Horizontal shift register

C1 Vout1

Timing

Vout2

generator

Hst D6

MCLK D5

Buffer amp

GND(A)

Vdd(D)

GND(D)

DCLK

Vdd(D)

KMPDC0744EC

Distance area image sensor

S15454-01WT

Timing chart (subframe*⁷)

Subframe

MCLK (10 MHz)

ȆȆȆ

Ext_reset

thp(Ext_reset)

Integration period

t17

tph(Reset)

t16

ȆȆȆ

Reset

t5t6

^thp(vsN^t)data(0)

Ndata(1)

Ndata(N-2)

Ndata(N-1)

Vst

Hst

t11

t9t10

thp(vst)

t12

t15

t13 t14

79(1ġųŰŸ)

80(1ġųŰŸ)

ȆȆȆ

1(1ġųŰŸ)80(1ġųŰŸ)

1(1ġųŰŸ)

2(1ġųŰŸ)

1(1ġųŰŸ)80(1ġųŰŸ)

Tdata(1)

VTX enable

Tdata(2)

VTX enable

Tdata(N-1)

VTX enable

t18

t19

VTX1, 2, 3

Output light

KMPDC0745EB

*7: Data with diﬀerent phase timing. One frame consists of four subframes (F1, F2, F3, F4).

∙ ∙ ∙

Subframe

1 frame

KMPDC1046EA

Distance area image sensor

S15454-01WT

Phase timing of VTX enable

Nlight

Output light

thp(VTX1) ^tpi(VTX)tlp(VTX1)

VTX1

VTX2

thp(VTX2)

VTX2

tlp(VTX2)

thp(VTX3)

tlp(VTX3)

VTX3

Output light

VTX1

VTX2

VTX3

VTX1

VTX2

VTX3

KMPDC1045EA

Speciﬁcations of I/O signals

tr(Reset)

tf(Reset)

tr(Hst)

Hst

tf(Hst)

MCLK

tf(DCLK)

tr(DCLK)

Reset

DCLK

td(DCLK)

tr(Vst)

Vst

tf(Vst)

tr(MCLK)

MCLK

tf(MCLK)

tf(Vout)

tr(Vout)

Vout1

Vout2

0.1 V

td(Vout)

MCLK

tr(Ext_reset)

tf(Ext_reset)

Ext_reset

KMPDC0746EB

Distance area image sensor

S15454-01WT

Parameter

Master clock pulse duty ratio

Master clock pulse rise and fall times

Frame reset pulse rise and fall times

Frame sync trigger pulse rise and fall times

Symbol

Min.

Typ.

Max.

Unit

tr(MCLK), tf(MCLK)

tr(Reset), tf(Reset)

tr(Vst), tf(Vst)

tr(Hst), tf(Hst)

thp(Ext_reset)

Line sync trigger pulse rise and fall times

Pixel reset pulse high period

µs

tr(Ext_reset),

tf(Ext_reset)

Pixel reset pulse rise and fall times

Time from falling edge of master clock pulse to rising

edge of pixel reset pulse

Time from falling edge of pixel reset pulse to rising edge

1/4 × 1/f(MCLK)

of frame reset pulse

Time from falling edge of pixel reset pulse to falling edge

of master clock pulse

Time from falling edge of master clock pulse to rising

edge of frame reset pulse

Time from rising edge of frame reset pulse to falling

edge of master clock pulse

Time from falling edge of master clock pulse to falling

edge of frame reset pulse

Time from falling edge of frame reset pulse to falling

edge of master clock pulse

Time from falling edge of master clock pulse to rising

edge of frame sync trigger pulse

Time from rising edge of frame sync trigger pulse to

falling edge of master clock pulse

Time from falling edge of master clock pulse to falling

edge of frame sync trigger pulse

Time from falling edge of frame sync trigger pulse to

falling edge of master clock pulse

Time from rising edge of master clock pulse to rising

edge of line sync trigger pulse

Time from rising edge of line sync trigger pulse to rising

edge of master clock pulse

Time from rising edge of master clock pulse to falling

edge of line sync trigger pulse

Time from falling edge of line sync trigger pulse to rising

1/4 × 1/f(MCLK)

1/2 × 1/f(MCLK)

t10

t11

t12

t13

t14

t15

t16

t17

t18

t19

t20

td(DCLK)

edge of master clock pulse

{141/f(MCLK) + t20} ×

80 + thp(ext_res) + t3

{141/f(MCLK) + t20} ×

80 + {1/2 × 1/f(MCLK)}

Readout time for reset level

Readout time for integration signals

Time from line sync trigger pulse (last pulse in a frame)

to VTX drive period ON

Time from VTX drive period OFF to falling edge of frame

reset pulse

Time from falling edge of master clock pulse (after reading signals

from all pixels) to rising edge of master clock puse (Hst: high period)

10/f(MCLK)

Time from falling edge of master clock pulse to rising edge

of output signal sync pulse*⁹

Output signal sync pulse rise time*⁸*⁹

Output signal sync pulse fall time*⁸*⁹

tr(DCLK)

tf(DCLK)

tr(Vout)

tf(Vout)

Settling rise time of output signal 1, 2*⁸*⁹*¹⁰

Settling fall time of output signal 1, 2*⁸*⁹*¹⁰

Time from rising edge of master clock pulse to output

td(Vout)

signal 1, 2 (output 50%)*⁹

*8: 10 to 90%

*9: Load capacitance CL=3 pF

*10: Output voltage=0.1 V

Distance area image sensor

S15454-01WT

Parameter

Charge transfer clock pulse cycle

Symbol

tpi(VTX)

thp(VTX1)

Min.

Typ.

Max.

Unit

High period

Low period

High period

Low period

High period

Low period

tpi(VTX)

thp(VTX2)

thp(VTX3)

Charge transfer clock pulse (VTX1)

Charge transfer clock pulse (VTX2)

Charge transfer clock pulse (VTX3)

tlp(VTX1)

thp(VTX2)

tlp(VTX2)

thp(VTX3)

tlp(VTX3)

tpi(VTX)

thp(VTX1)

thp(VTX3)

tpi(VTX)

thp(VTX1)

thp(VTX2)

Charge transfer clock pulse voltage rise and fall times*⁸

High level

Charge transfer clock pulse voltage

Low level

tr(VTX), tf(VTX)

1.6

1.8

2.0

VTX1, VTX2, VTX3

Calculation method of frame rate

Frame rate=1/4 of subframe time

=1/{(Integration time + Readout time) × 4}

When operating in non-destructive readout mode

Time per subframe=Integration time + (Readout time × Non-destructive readout count)

Note: The integration time setting needs to be changed depending on the required distance accuracy and usage environment factors

such as background light.

Integration signal can be read out without reading out the reset level. But this may increase random noise and degrade sensitivity

uniformity of the photosensitive area.

[Readout time calculation]

Readout time=

× Number of horizontal timing clock × Number of vertical pixels

Clock pulse frequency

=Time per clock (Readout time per pixel) × Number of horizontal timing clock × Number of vertical pixels

⸱

Calculation example [clock pulse frequency=10 MHz, number of horizontal timing clock=141 (=37 + 104), number of vertical pixels=80]

Readout time=

× 141 × 80

10⁶[Hz]

=100 [ns] 141 80

=1.128 [ms]

Horizontal timing

141 (=37 + 104) × mclk

37 mclk

t20

Hst

MCLK

DCLK

104

Vout1

Vout2

KMPDC0747EC

Distance area image sensor

S15454-01WT

Input terminal capacitance (Ta=25 °C, Vdd=3.3 V)

Parameter

Charge transfer clock pulse internal load

Symbol

CLTX

Min.

Typ.

Max.

Unit

capacitance

Dimensional outline (unit: mm)

Recommended land pattern (unit: mm)

6.8

P1.0 × 5=5.0

(28 ×) ɸ0.26

0.06*

1st pixel

Horizontal direction of scan

Photosensitive surface

KMPDC0771EA

P1.0 × 5=5.0

Index mark

0.25 × 1.15

0.5

Electrode

ɸ0.25

Tolerance unless otherwise noted: 0.1

Au electrode

* Distance from package center to photosensitive

area center

KMPDA0610EB

Distance area image sensor

S15454-01WT

Pin connections

Pin no.

Symbol

GND(A)

Vout1

Vout2

I/O

Description

Ground

Pixel reset voltage

Output signal 1

Output signal 2

No connection

Analog supply voltage

Photosensitive area bias voltage

Analog supply voltage

Ground

Digital supply voltage

Power supply for VTX

No connection

Ground

Vertical shift register start signal

No connection

Digital supply voltage

Charge transfer clock 3 (for OFD)

Power supply for VTX

Vertical shift register reset pulse

Master clock input signal

Ground

Charge transfer clock 2

Charge transfer clock 1

Reset pulse

Vdd(A)

Vpg

Vdd(A)

GND(A)

Vdd(D)

Vdd(VTX)

GND(VTX)

Vst

Vdd(D)

VTX3

VDD(VTX)

Ext_reset

MCLK

GND(D)

VTX2

VTX1

Reset

Hst

DCLK

Horizontal shift register start signal

Output data sample clock

Note: Leave the NC terminals open.

Connect an impedance converting buﬀer ampliﬁer to Vout1 and Vout2 terminals so as to minimize the current ﬂow.

Distance area image sensor

S15454-01WT

Reel packing specifications

Reel (conforms to JEITA ET-7200)

Outer diameter

Hub diameter

ϕ60 mm

Tape width

16 mm

Material

Electrostatic characteristics

Conductive

ϕ180 mm

Embossed tape (unit: mm, material: PS, conductive)

8.0 0.ꢀ

ɸꢀ.5⁺-⁰0^.ꢀ

2.0 0.ꢀ

4.0 0.ꢀ

0.3

ꢀst pixel

ɸ2

5.5 0.ꢀ

KMPDC0828EB

Packing quantity

500 pcs/reel

Packing state

Reel and desiccant in moisture-proof packaging (vacuum-sealed)

Distance area image sensor

S15454-01WT

Recommended soldering conditions

Peak temperature

260 °C max.

Temperature increase

3 °C/s max.

Peak temperature - 5 °C

30 s max.

Cooling

6 °C/s max.

217 °C

200 °C

150 °C

Preheat

Soldering

60 to 150 s

60 to 120 s

25 °C to peak temperature

480 s max.

Time

KSPDB0419EA

⸱ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity

of 60% or less, and perform soldering within 1 year.

⸱ The eﬀect that the product receives during reﬂow soldering varies depending on the circuit board and reﬂow oven that are used.

When you set reﬂow soldering conditions, check that problems do not occur in the product by testing out the conditions in advance.

⸱ In order to improve reliability, we recommend that you use underﬁll resin to ﬁll the gap between the element and the board, after

reﬂow soldering.

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

⸱ Disclaimer

⸱ Surface mount type products

Technical note

∙ Distance image sensors S15452/S15453/S15454-01WT, S16443/S16444-01WT

Distance area image sensor

S15454-01WT

Evaluation kit for distance area image sensor C15359

The evaluation kit [55 mm (H) × 50 mm (V)] is available for the S15454-01WT distance area image sensor (with the S15454-01WT).

Information described in this material is current as of March 2024.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Chuo-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184

U.S.A.: HAMAMATSU CORPORATION: 360 Foothill Road, Bridgewater, NJ 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218

Germany: HAMAMATSU PHOTONICS DEUTSCHLAND GMBH: Arzbergerstr. 10, 82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: info@hamamatsu.de

France: HAMAMATSU PHOTONICS FRANCE S.A.R.L.: 19 Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr

United Kingdom: HAMAMATSU PHOTONICS UK LIMITED: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk

North Europe: HAMAMATSU PHOTONICS NORDEN AB: Torshamnsgatan 35, 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se

Italy: HAMAMATSU PHOTONICS ITALIA S.R.L.: Strada della Moia, 1 int. 6 20044 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41 E-mail: info@hamamatsu.it

China: HAMAMATSU PHOTONICS (CHINA) CO., LTD.: 1201, Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R. China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn

Taiwan: HAMAMATSU PHOTONICS TAIWAN CO., LTD.: 13F-1, No.101, Section 2, Gongdao 5th Road, East Dist., Hsinchu City, 300046, Taiwan(R.O.C) Telephone: (886)3-659-0080, Fax: (886)3-659-0081 E-mail: info@hamamatsu.com.tw

Cat. No. KMPD1220E12 Mar. 2024 DN

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