概述
数据手册S15454-01WT 概述
NIR 增强型通过 TOF（飞行时间）方法测量到物体的距离有效像素数：96×72
S15454-01WT 数据手册
通过下载S15454-01WT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Distance area image sensor
S15454-01WT
NIR-enhanced type,
measures the distance to an object by TOF method
The distance image sensor is designed to measure the distance to an object by TOF (time-of-flight) method. When used in
combination with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light
is emitted and received. Distance data can be obtained by performing calculation on the output signal with an external signal
processing circuit or on a PC. We provide an evaluation kit for this product. Contact us for detailed information.
Features
Applications
High sensitivity in the near infrared region
Improved tolerance to background light
Number of effective pixels: 96 (H) × 72 (V)
Compact chip size package (CSP) type
Obstacle detection (self-driving, robots, etc.)
Security (intrusion detection, etc.)
Shape recognition (logistics, robots, etc.)
Motion capture
Touchless operation
Structure
Parameter
Image size
Pixel size
Specification
4.8 × 3.6
50 × 50
50
Unit
mm
µm
Pixel pitch
µm
Number of pixels
Number of effective pixels
Package
104 × 80
96 × 72
CSP
pixels
pixels
-
Note: This product is not hermetically sealed.
Absolute maximum ratings
Parameter
Analog supply voltage
Digital supply voltage
Symbol
Vdd(A)
Vdd(D)
Vr
Condition
Ta=25 °C
Ta=25 °C
Value
-0.3 to +4.2
-0.3 to +4.2
Unit
V
V
Pixel reset
Analog input
VTX power supply
Photosensitive area
Frame reset pulse
Frame sync trigger pulse
Line sync trigger pulse
Pixel reset pulse
Vdd(VTX) Ta=25 °C
-0.3 to Vdd(A) + 0.3
-0.3 to Vdd(D) + 0.3
V
V
terminal voltage
Vpg
Reset
Vst
Hst
Ext_reset
MCLK
Digital input
terminal voltage
Ta=25 °C
Master clock pulse
Charge transfer clock pulse voltage
Operating temperature
Storage temperature
Soldering temperature*2
VTX1, VTX2, VTX3 Ta=25 °C
-0.3 to Vdd(A) + 0.3
-25 to +85
V
Topr
Tstg
Tsol
No dew condensation*1
No dew condensation*1
°C
°C
°C
-40 to +85
260 (twice)
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: Reflow soldering, IPC/JEDEC J-STD-020 MSL 2, see P.11
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
1
www.hamamatsu.com
Distance area image sensor
S15454-01WT
Recommended terminal voltage (Ta=25 °C)
Parameter
Analog supply voltage
Digital supply voltage
Symbol
Vdd(A)
Vdd(D)
Vr
Min.
3.2
3.2
2.5
1.6
0.6
Typ.
3.3
3.3
2.6
1.8
0.8
-
-
-
-
-
-
-
-
-
-
-
Max.
3.4
3.4
2.7
2.0
1.0
-
Unit
V
V
V
V
Pixel reset
Bias voltage
VTX power supply Vdd(VTX)
Photosensitive area
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
Vpg
V
Vdd(D) × 0.8
Frame reset pulse voltage
Reset
V
V
V
V
V
V
-
Vdd(D) 0.2
×
Vdd(D) × 0.8
-
Frame sync trigger pulse
voltage
Vst
Hst
-
Vdd(D) 0.2
×
Vdd(D) × 0.8
-
Line sync trigger pulse
voltage
-
Vdd(D) 0.2
×
Vdd(D) × 0.8
-
Master clock pulse voltage
Pixel reset pulse voltage
MCLK
Ext_reset
DCLK
-
Vdd(D) 0.2
×
Vdd(D) × 0.8
-
-
Vdd(D) 0.2
×
Vdd(D) 0.8
×
-
Output signal sync pulse
voltage
-
-
Vdd(D) 0.2
×
Electric characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V]
Parameter
Clock pulse frequency
Data rate
Symbol
f(MCLK)
DR
Condition
Min.
1 M
-
-
Typ.
Max.
10 M
-
-
Unit
Hz
Hz
-
f(MCLK)
6
Current consumption
Ic
Dark state
mA
Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V, Vr=2.6 V, MCLK=10 MHz]
Parameter
Spectral response range
Symbol
λ
Min.
Typ.
500 to 1100
Max.
Unit
nm
800
Peak sensitivity wavelength
λp
S
Vd
RN
Vor
SR
PRNU
-
-
-
-
-
-
-
-
-
-
nm
V/(W⸱s)
V/s
mV rms
V
Photosensitivity*3
1 × 1012
Dark output
Random noise
2.8
0.5
2.35
-
Dark output voltage*4
Sensitivity ratio*5
0.7
-
1.43
±10
-
%
Photoresponse nonuniformity*6
-
*3: Monochromatic wavelength light source (λ=805 nm)
*4: Output value right after reset in dark state
*5: Output ratio of Vout1 (VTX1=1.8 V, VTX2=VTX3=0 V) to Vout2 (VTX2=1.8 V, VTX1=VTX3=0 V)
*6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 64 pixels excluding 8 pixels each at
both ends, and is defined as follows.
PRNU=(∆X/X) × 100 [%]
X: average of the output of all pixel, ∆X: difference between the maximum or minimum output and X
2
Distance area image sensor
S15454-01WT
Spectral response (typical example)
Basic connection example
Buffer amp
Vout1
(Ta=25 °C)
1.0
0.8
0.6
0.4
Vout2
Buffer amp
KMPDC0486EA
0.2
0
500
600
700
800
900 1000 1100 1200
Wavelength (nm)
KMPDB0564EA
Block diagram
GND(A) Vdd(A) Vdd(VTX)
VTX1 VTX2 VTX3
GND(VTX) GND(VTX) Vdd(VTX)
C2
D2
A3
B6
A6
A5
B4
A4
B5
CLTX
CLTX
CLTX
Bias
generator
Vdd(A)
Vpg
A2
B2
B1
Photodiode array
104 × 80ġpixels
(
Number of effective pixelsĻ 96 × 72)
Vr
Ext_reset
Reset
Vst
C5
C6
C4
Sample-and-hold circuit
Horizontal shift register
C1 Vout1
Timing
Vout2
D1
generator
Hst D6
MCLK D5
Buffer amp
GND(A)
A1
E2
Vdd(D)
E5
GND(D)
E6
DCLK
E4
Vdd(D)
KMPDC0744EC
3
Distance area image sensor
S15454-01WT
Timing chart (subframe*7)
Subframe
MCLK (10 MHz)
ȆȆȆ
ȆȆȆ
t1
t3
Ext_reset
thp(Ext_reset)
t2
Integration period
Integration period
t17
tph(Reset)
t16
ȆȆȆ
ȆȆȆ
Reset
t4
t7
t5t6
thp(vsNt)data(0)
Ndata(1)
Ndata(N-2)
1
Ndata(N-1)
1
Vst
Hst
t8
t11
t9t10
thp(vst)
t12
t15
t13 t14
1
2
79
79(1ġųŰŸ)
80
80(1ġųŰŸ)
81
1
80
81
80
81
80
81
ȆȆȆ
ȆȆȆ
1(1ġųŰŸ)80(1ġųŰŸ)
1(1ġųŰŸ)80(1ġųŰŸ)
1(1ġųŰŸ)
2(1ġųŰŸ)
1(1ġųŰŸ)80(1ġųŰŸ)
Tdata(1)
VTX enable
Tdata(2)
VTX enable
Tdata(N-1)
VTX enable
t18
t19
VTX1, 2, 3
Output light
KMPDC0745EB
*7: Data with different phase timing. One frame consists of four subframes (F1, F2, F3, F4).
∙ ∙ ∙
F4
F1
F2
F3
F4
F1
∙ ∙ ∙
Subframe
1 frame
KMPDC1046EA
4
Distance area image sensor
S15454-01WT
Phase timing of VTX enable
F1
F2
Nlight
Output light
Output light
thp(VTX1) tpi(VTX) tlp(VTX1)
VTX1
VTX1
VTX2
thp(VTX2)
VTX2
tlp(VTX2)
thp(VTX3)
tlp(VTX3)
VTX3
VTX3
F3
F4
Output light
Output light
VTX1
VTX2
VTX3
VTX1
VTX2
VTX3
KMPDC1045EA
Specifications of I/O signals
tr(Reset)
tf(Reset)
tr(Hst)
Hst
tf(Hst)
MCLK
tf(DCLK)
tr(DCLK)
Reset
DCLK
td(DCLK)
tr(Vst)
Vst
tf(Vst)
tr(MCLK)
MCLK
tf(MCLK)
tf(Vout)
tr(Vout)
Vout1
Vout2
0.1 V
td(Vout)
MCLK
tr(Ext_reset)
tf(Ext_reset)
Ext_reset
KMPDC0746EB
5
Distance area image sensor
S15454-01WT
Parameter
Master clock pulse duty ratio
Master clock pulse rise and fall times
Frame reset pulse rise and fall times
Frame sync trigger pulse rise and fall times
Symbol
-
Min.
45
0
0
0
Typ.
50
-
-
-
Max.
55
20
20
20
20
-
Unit
%
ns
ns
ns
8
*
*
tr(MCLK), tf(MCLK)
tr(Reset), tf(Reset)
tr(Vst), tf(Vst)
tr(Hst), tf(Hst)
thp(Ext_reset)
8
8
*
8
Line sync trigger pulse rise and fall times
Pixel reset pulse high period
*
0
10
-
-
ns
µs
tr(Ext_reset),
tf(Ext_reset)
Pixel reset pulse rise and fall times
0
-
-
20
ns
s
Time from falling edge of master clock pulse to rising
edge of pixel reset pulse
Time from falling edge of pixel reset pulse to rising edge
t1
t2
1/4 × 1/f(MCLK)
0
-
-
-
s
of frame reset pulse
Time from falling edge of pixel reset pulse to falling edge
of master clock pulse
Time from falling edge of master clock pulse to rising
edge of frame reset pulse
Time from rising edge of frame reset pulse to falling
edge of master clock pulse
Time from falling edge of master clock pulse to falling
edge of frame reset pulse
Time from falling edge of frame reset pulse to falling
edge of master clock pulse
Time from falling edge of master clock pulse to rising
edge of frame sync trigger pulse
Time from rising edge of frame sync trigger pulse to
falling edge of master clock pulse
Time from falling edge of master clock pulse to falling
edge of frame sync trigger pulse
Time from falling edge of frame sync trigger pulse to
falling edge of master clock pulse
Time from rising edge of master clock pulse to rising
edge of line sync trigger pulse
Time from rising edge of line sync trigger pulse to rising
edge of master clock pulse
Time from rising edge of master clock pulse to falling
edge of line sync trigger pulse
Time from falling edge of line sync trigger pulse to rising
t3
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
1/4 × 1/f(MCLK)
-
-
s
t4
-
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
1/2 × 1/f(MCLK)
-
s
t5
-
s
t6
-
s
t7
-
s
t8
-
s
t9
-
s
t10
t11
t12
t13
t14
t15
t16
t17
t18
t19
t20
td(DCLK)
-
s
-
s
-
s
-
s
-
s
-
s
edge of master clock pulse
{141/f(MCLK) + t20} ×
80 + thp(ext_res) + t3
{141/f(MCLK) + t20} ×
80 + {1/2 × 1/f(MCLK)}
Readout time for reset level
-
s
Readout time for integration signals
-
-
s
Time from line sync trigger pulse (last pulse in a frame)
to VTX drive period ON
Time from VTX drive period OFF to falling edge of frame
reset pulse
Time from falling edge of master clock pulse (after reading signals
from all pixels) to rising edge of master clock puse (Hst: high period)
0
-
-
s
0
-
-
s
10/f(MCLK)
-
-
s
Time from falling edge of master clock pulse to rising edge
-
12
-
ns
of output signal sync pulse*9
Output signal sync pulse rise time*8 *9
Output signal sync pulse fall time*8 *9
tr(DCLK)
tf(DCLK)
tr(Vout)
tf(Vout)
-
-
-
-
12
9
15
15
-
-
27
27
ns
ns
ns
ns
Settling rise time of output signal 1, 2*8 *9 *10
Settling fall time of output signal 1, 2*8 *9 *10
Time from rising edge of master clock pulse to output
td(Vout)
-
20
26
ns
signal 1, 2 (output 50%)*9
*8: 10 to 90%
*9: Load capacitance CL=3 pF
*10: Output voltage=0.1 V
6
Distance area image sensor
S15454-01WT
Parameter
Charge transfer clock pulse cycle
Symbol
tpi(VTX)
thp(VTX1)
Min.
60
30
Typ.
-
-
Max.
-
-
Unit
ns
High period
Low period
High period
Low period
High period
Low period
tpi(VTX)
thp(VTX2)
thp(VTX3)
Charge transfer clock pulse (VTX1)
Charge transfer clock pulse (VTX2)
Charge transfer clock pulse (VTX3)
ns
ns
ns
tlp(VTX1)
thp(VTX2)
tlp(VTX2)
thp(VTX3)
tlp(VTX3)
-
30
-
-
-
-
-
-
-
tpi(VTX)
thp(VTX1)
thp(VTX3)
0
-
tpi(VTX)
thp(VTX1)
thp(VTX2)
-
Charge transfer clock pulse voltage rise and fall times*8
High level
Charge transfer clock pulse voltage
Low level
tr(VTX), tf(VTX)
-
1.6
-
3
1.8
0
-
2.0
-
ns
V
VTX1, VTX2, VTX3
Calculation method of frame rate
Frame rate=1/4 of subframe time
=1/{(Integration time + Readout time) × 4}
When operating in non-destructive readout mode
Time per subframe=Integration time + (Readout time × Non-destructive readout count)
Note: The integration time setting needs to be changed depending on the required distance accuracy and usage environment factors
such as background light.
Integration signal can be read out without reading out the reset level. But this may increase random noise and degrade sensitivity
uniformity of the photosensitive area.
[Readout time calculation]
1
Readout time=
× Number of horizontal timing clock × Number of vertical pixels
Clock pulse frequency
=Time per clock (Readout time per pixel) × Number of horizontal timing clock × Number of vertical pixels
⸱
Calculation example [clock pulse frequency=10 MHz, number of horizontal timing clock=141 (=37 + 104), number of vertical pixels=80]
1
Readout time=
× 141 × 80
5
106 [Hz]
×
=100 [ns] 141 80
×
×
=1.128 [ms]
Horizontal timing
141 (=37 + 104) × mclk
37 mclk
t20
Hst
MCLK
oe
DCLK
1
2
3
4
104
Vout1
Vout2
KMPDC0747EC
7
Distance area image sensor
S15454-01WT
Input terminal capacitance (Ta=25 °C, Vdd=3.3 V)
Parameter
Charge transfer clock pulse internal load
Symbol
CLTX
Min.
Typ.
Max.
Unit
pF
-
10
-
capacitance
Dimensional outline (unit: mm)
Recommended land pattern (unit: mm)
6.8
P1.0 × 5=5.0
(28 ×) ɸ0.26
0.06*
1st pixel
Horizontal direction of scan
Photosensitive surface
KMPDC0771EA
P1.0 × 5=5.0
E
D
C
C3
B3
B
A
1
2
3
4
5
6
Index mark
0.25 × 1.15
0.5
Electrode
ɸ0.25
Tolerance unless otherwise noted: 0.1
ġ
Au electrode
* Distance from package center to photosensitive
area center
KMPDA0610EB
8
Distance area image sensor
S15454-01WT
Pin connections
Pin no.
A1
B1
C1
D1
E1
Symbol
GND(A)
Vr
Vout1
Vout2
NC
I/O
I
I
O
O
-
I
I
I
I
I
I
-
-
-
-
I
I
I
-
I
I
I
I
I
I
I
I
I
I
Description
Ground
Pixel reset voltage
Output signal 1
Output signal 2
No connection
Analog supply voltage
Photosensitive area bias voltage
Analog supply voltage
Ground
Digital supply voltage
Power supply for VTX
No connection
No connection
No connection
No connection
Ground
Ground
Vertical shift register start signal
No connection
Digital supply voltage
Charge transfer clock 3 (for OFD)
Power supply for VTX
Vertical shift register reset pulse
Master clock input signal
Ground
Charge transfer clock 2
Charge transfer clock 1
Reset pulse
A2
B2
C2
D2
E2
A3
B3
C3
D3
E3
A4
B4
C4
D4
E4
A5
B5
C5
D5
E5
A6
B6
C6
D6
E6
Vdd(A)
Vpg
Vdd(A)
GND(A)
Vdd(D)
Vdd(VTX)
NC
NC
NC
NC
GND(VTX)
GND(VTX)
Vst
NC
Vdd(D)
VTX3
VDD(VTX)
Ext_reset
MCLK
GND(D)
VTX2
VTX1
Reset
Hst
DCLK
Horizontal shift register start signal
Output data sample clock
O
Note: Leave the NC terminals open.
Connect an impedance converting buffer amplifier to Vout1 and Vout2 terminals so as to minimize the current flow.
9
Distance area image sensor
S15454-01WT
Reel packing specifications
Reel (conforms to JEITA ET-7200)
Outer diameter
Hub diameter
ϕ60 mm
Tape width
16 mm
Material
PS
Electrostatic characteristics
Conductive
ϕ180 mm
Embossed tape (unit: mm, material: PS, conductive)
8.0 0.ꢀ
ɸꢀ.5+-00.ꢀ
2.0 0.ꢀ
4.0 0.ꢀ
0.3
ꢀst pixel
ɸ2
5.5 0.ꢀ
KMPDC0828EB
Packing quantity
500 pcs/reel
Packing state
Reel and desiccant in moisture-proof packaging (vacuum-sealed)
10
Distance area image sensor
S15454-01WT
Recommended soldering conditions
Peak temperature
260 °C max.
Temperature increase
3 °C/s max.
Peak temperature - 5 °C
30 s max.
Cooling
6 °C/s max.
217 °C
200 °C
150 °C
Preheat
Soldering
60 to 150 s
60 to 120 s
25 °C to peak temperature
480 s max.
Time
KSPDB0419EA
⸱ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity
of 60% or less, and perform soldering within 1 year.
⸱ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
When you set reflow soldering conditions, check that problems do not occur in the product by testing out the conditions in advance.
⸱ In order to improve reliability, we recommend that you use underfill resin to fill the gap between the element and the board, after
reflow soldering.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
⸱ Disclaimer
⸱ Surface mount type products
Technical note
∙ Distance image sensors S15452/S15453/S15454-01WT, S16443/S16444-01WT
11
Distance area image sensor
S15454-01WT
Evaluation kit for distance area image sensor C15359
The evaluation kit [55 mm (H) × 50 mm (V)] is available for the S15454-01WT distance area image sensor (with the S15454-01WT).
Contact us for detailed information.
Information described in this material is current as of March 2024.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Chuo-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184
U.S.A.: HAMAMATSU CORPORATION: 360 Foothill Road, Bridgewater, NJ 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: HAMAMATSU PHOTONICS DEUTSCHLAND GMBH: Arzbergerstr. 10, 82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: info@hamamatsu.de
France: HAMAMATSU PHOTONICS FRANCE S.A.R.L.: 19 Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: HAMAMATSU PHOTONICS UK LIMITED: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: HAMAMATSU PHOTONICS NORDEN AB: Torshamnsgatan 35, 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: HAMAMATSU PHOTONICS ITALIA S.R.L.: Strada della Moia, 1 int. 6 20044 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41 E-mail: info@hamamatsu.it
China: HAMAMATSU PHOTONICS (CHINA) CO., LTD.: 1201, Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R. China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn
Taiwan: HAMAMATSU PHOTONICS TAIWAN CO., LTD.: 13F-1, No.101, Section 2, Gongdao 5th Road, East Dist., Hsinchu City, 300046, Taiwan(R.O.C) Telephone: (886)3-659-0080, Fax: (886)3-659-0081 E-mail: info@hamamatsu.com.tw
12
Cat. No. KMPD1220E12 Mar. 2024 DN
S15454-01WT 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| S1549AAB-168.0000 | PERICOM | Oscillator, | 获取价格 |
|
| S1549BAB-168.0000 | PERICOM | Oscillator, | 获取价格 |
|
| S1549BAB-168.0000(T) | PERICOM | Oscillator, | 获取价格 |
|
| S1549BAB-65.0000 | PERICOM | Oscillator, | 获取价格 |
|
| S1549BAB-65.0000(T) | PERICOM | Oscillator, | 获取价格 |
|
| S1549BAB-FREQ(T) | PERICOM | LVPECL Output Clock Oscillator, 65MHz Min, 168MHz Max | 获取价格 |
|
| S1549EAB-168.0000 | PERICOM | Oscillator, | 获取价格 |
|
| S1549EAB-168.0000(T) | PERICOM | Oscillator, | 获取价格 |
|
| S1549EAB-65.0000 | PERICOM | Oscillator, | 获取价格 |
|
| S1549EAB-65.0000(T) | PERICOM | Oscillator, | 获取价格 |
|
S15454-01WT 相关文章
探究驱动器、开关与激光二极管对提升激光雷达性能的作用
- 2025-02-26
- 101
利用数字预失真技术打造超精准信号发生器
- 2025-02-26
- 109
英伟达挑战欧盟反垄断调查：起诉质疑Run:ai收购案的调查
- 2025-02-26
- 77
英特尔18A工艺良率仅20%~30%，下半年量产计划面临挑战
- 2025-02-26
- 78
